Issue

Vol. 12 (2020)

Two-Dimensional Tellurium: Progress, Challenges, and Prospects

https://doi.org/10.1007/s40820-020-00427-z
Zhe Shi
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Rui Cao
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Karim Khan
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Ayesha Khan Tareen
for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Xiaosong Liu
for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Weiyuan Liang
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Ye Zhang
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Chunyang Ma
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Zhinan Guo
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China
Xiaoling Luo
Department of Ophthalmology, Shenzhen People’s Hospital, Second Clinical Medical College of Jinan University, First Affiliated Hospital of Southern University of Science and Technology, Shenzhen 518020, Guangdong, People’s Republic of China
Han Zhang
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro‑Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, Guangdong, People’s Republic of China

Corresponding Author: Han Zhang

hzhang@szu.edu.cn

Nano-Micro Letters, Vol. 12 (2020), Article Number: 99

Abstract

Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.


Highlights:


1 Physical Properties of the two-dimensional tellurium were discussed in detail, including electrical properties, optical properties, thermoelectric properties, and outstanding environmental stability.
2 Emerging applications based on atomically thin tellurene flakes were presented, such as photodetector, transistors, piezoelectric device, modulator, and energy harvesting devices.
3 The challenges encountered and prospects were presented.

Keywords

2D materials Tellurium Photodetectors Solar cells Energy harvesting Logic gate and circuits
Shi, Zhe, Rui Cao, Karim Khan, Ayesha Khan Tareen, Xiaosong Liu, Weiyuan Liang, Ye Zhang, Chunyang Ma, Zhinan Guo, Xiaoling Luo, and Han Zhang. 2020. “Two-Dimensional Tellurium: Progress, Challenges, and Prospects”. Nano-Micro Letters 12 (April):99. https://doi.org/10.1007/s40820-020-00427-z.
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References
  1. L.A. Ba, M. Doering, V. Jamier, C. Jacob, Tellurium: an element with great biological potency and potential. Org. Biomol. Chem. 8(19), 4203–4216 (2010). https://doi.org/10.1039/c0Ob00086h
  2. J.W. Liu, J.H. Zhu, C.L. Zhang, H.W. Yu, S.H. Liang, Mesostructured assemblies of ultrathin superlong tellurium nanowires and their photoconductivity. J. Am. Chem. Soc. 132(26), 8945–8952 (2010). https://doi.org/10.1021/ja910871s
  3. H. Peng, N. Kioussis, G.J. Snyder, Elemental tellurium as a chiral p-type thermoelectric material. Phys. Rev. B 89(19), 195206 (2014). https://doi.org/10.1103/PhysRevB.89.195206
  4. J.P. Hermann, G. Quentin, J.M. Thuillier, Determination of the d14 piezoelectric coefficient of tellurium. Solid State Commun. 7(1), 161–163 (1969). https://doi.org/10.1016/0038-1098(69)90715-7
  5. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004). https://doi.org/10.1126/science.1102896
  6. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, I.V. Grigorieva, S.V. Dubonos, A.A. Firsov, Two-dimensional gas of massless dirac fermions in graphene. Nature 438(7065), 197–200 (2005). https://doi.org/10.1038/nature04233
  7. Y. Yin, R. Cao, J. Guo, C. Liu, J. Li et al., High-speed and high-responsivity hybrid silicon/black-phosphorus waveguide photodetectors at 2 μm. Laser Photonics Rev. 13(6), 1900032 (2019). https://doi.org/10.1002/lpor.201900032
  8. C. Xing, G. Jing, X. Liang, M. Qiu, Z. Li et al., Graphene oxide/black phosphorus nanoflake aerogels with robust thermo-stability and significantly enhanced photothermal properties in air. Nanoscale 9(24), 8096–8101 (2017). https://doi.org/10.1039/c7nr00663b
  9. A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri et al., Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97(18), 187401 (2006). https://doi.org/10.1103/PhysRevLett.97.187401
  10. J. Wang, H. Yan, Z. Liu, Z. Wang, H. Gao et al., Langmuir-Blodgett self-assembly of ultrathin graphene quantum dot films with modulated optical properties. Nanoscale 10(41), 19612–19620 (2018). https://doi.org/10.1039/c8nr05159c
  11. Q. Bao, H. Zhang, B. Wang, Z. Ni, C.H.Y.X. Lim, Y. Wang, D.Y. Tang, K.P. Loh, Broadband graphene polarizer. Nat. Photonics 5(7), 411–415 (2011). https://doi.org/10.1038/nphoton.2011.102
  12. S. Lu, C. Zhao, Y. Zou, S. Chen, Y. Chen, Y. Li, H. Zhang, S. Wen, D. Tang, Third order nonlinear optical property of Bi2Se3. Opt. Express 21(2), 2072–2082 (2013). https://doi.org/10.1364/oe.21.002072
  13. Z. Zheng, C. Zhao, S. Lu, Y. Chen, Y. Li, H. Zhang, S. Wen, Microwave and optical saturable absorption in graphene. Opt. Express 20(21), 23201–23214 (2012). https://doi.org/10.1364/oe.20.023201
  14. H. Yu, H. Zhang, Y. Wang, C. Zhao, B. Wang, S. Wen, H. Zhang, J. Wang, Topological insulator as an optical modulator for pulsed solid-state lasers. Laser Photonics Rev. 7(6), L77–L83 (2013). https://doi.org/10.1002/lpor.201300084
  15. M. Qiu, D. Wang, W. Liang, L. Liu, Y. Zhang et al., Novel concept of the smart nir-light-controlled drug release of black phosphorus nanostructure for cancer therapy. Proc. Natl. Acad. Sci. U.S.A. 115(3), 501–506 (2018). https://doi.org/10.1073/pnas.1714421115
  16. A.H. Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, A.K. Geim, The electronic properties of graphene. Rev. Mod. Phys. 81(1), 109–162 (2009). https://doi.org/10.1103/RevModPhys.81.109
  17. H. Zhang, S. Virally, Q. Bao, L.K. Ping, S. Massar, N. Godbout, P. Kockaert, Z-scan measurement of the nonlinear refractive index of graphene. Opt. Lett. 37(11), 1856–1858 (2012). https://doi.org/10.1364/ol.37.001856
  18. S.B. Lu, L.L. Miao, Z.N. Guo, X. Qi, C.J. Zhao et al., Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material. Opt. Express 23(9), 11183–11194 (2015). https://doi.org/10.1364/oe.23.011183
  19. R. Cao, H.D. Wang, Z.N. Guo, D.K. Sang, L.Y. Zhang et al., Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity. Adv. Opt. Mater. 7(12), 1900020 (2019). https://doi.org/10.1002/adom.201900020
  20. Q. Zhou, Q. Chen, Y. Tong, J. Wang, Light-induced ambient degradation of few-layer black phosphorus: mechanism and protection. Angew. Chem. Int. Ed. 55(38), 11437–11441 (2016). https://doi.org/10.1002/anie.201605168
  21. J. Zheng, Z. Yang, C. Si, Z. Liang, X. Chen et al., Black phosphorus based all-optical-signal-processing: toward high performances and enhanced stability. ACS Photonics 4(6), 1466–1476 (2017). https://doi.org/10.1021/acsphotonics.7b00231
  22. M.H. Jeong, D.H. Kwak, H.S. Ra, A.Y. Lee, J.S. Lee, Realizing long-term stability and thickness control of black phosphorus by ambient thermal treatment. ACS Appl. Mater. Interfaces 10(22), 19069–19075 (2018). https://doi.org/10.1021/acsami.8b04627
  23. H. Zhang, S.B. Lu, J. Zheng, J. Du, S.C. Wen, D.Y. Tang, K.P. Loh, Molybdenum disulfide (MoS) as a broadband saturable absorber for ultra-fast photonics. Opt. Express 22(6), 7249–7260 (2014). https://doi.org/10.1364/oe.22.007249
  24. B. Wu, X. Liu, J. Yin, H. Lee, Bulk β-Te to few layered β-tellurenes: indirect to direct band-gap transitions showing semiconducting property. Mater. Res. Express 4(9), 095902 (2017). https://doi.org/10.1088/2053-1591/aa8ae3
  25. Y. Wang, G. Qiu, R. Wang, S. Huang, Q. Wang et al., Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 1(4), 228–236 (2018). https://doi.org/10.1038/s41928-018-0058-4
  26. M. Amani, C. Tan, G. Zhang, C. Zhao, J. Bullock et al., Solution-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors. ACS Nano 12(7), 7253–7263 (2018). https://doi.org/10.1021/acsnano.8b03424
  27. A. Vonhippel, Structure and conductivity in the vib group of the periodic system. J. Chem. Phys. 16(4), 372–380 (1948). https://doi.org/10.1063/1.1746893
  28. W. Zhang, Q. Wu, O.V. Yazyev, H. Weng, Z. Guo, W.-D. Cheng, G.-L. Chai, Topological phase transitions driven by strain in monolayer tellurium. Phys. Rev. B 98(11), 115411 (2018). https://doi.org/10.1103/PhysRevB.98.115411
  29. C. Lin, W. Cheng, G. Chai, H. Zhang, Thermoelectric properties of two-dimensional selenene and tellurene from group-VI elements. Phys. Chem. Chem. Phys. 20(37), 24250–24256 (2018). https://doi.org/10.1039/C8CP04069A
  30. A.K. Geim, Graphene: status and prospects. Science 324(5934), 1530–1534 (2009). https://doi.org/10.1126/science.1158877
  31. L.M. Malard, M.A. Pimenta, G. Dresselhaus, M.S. Dresselhaus, Raman spectroscopy in graphene. Phys. Rep. Rev. Sect. Phys. Lett. 473(5–6), 51–87 (2009). https://doi.org/10.1016/j.physrep.2009.02.003
  32. Y. Zhu, S. Murali, M.D. Stoller, K.J. Ganesh, W. Cai et al., Carbon-based supercapacitors produced by activation of graphene. Science 332(6037), 1537–1541 (2011). https://doi.org/10.1126/science.1200770
  33. C.N.R. Rao, A.K. Sood, K.S. Subrahmanyam, A. Govindaraj, Graphene: the new two-dimensional nanomaterial. Angew. Chem. Int. Ed. 48(42), 7752–7777 (2009). https://doi.org/10.1002/anie.200901678
  34. Q. Bao, H. Zhang, Z. Ni, Y. Wang, L. Polavarapu et al., Monolayer graphene as a saturable absorber in a mode-locked laser. Nano Res. 4(3), 297–307 (2011). https://doi.org/10.1007/s12274-010-0082-9
  35. K.T. Chen, M.H. Hsieh, Y.S. Su, J. Wen, S.T. Chang, Carrier mobility calculation for monolayer black phosphorous. J. Nanosci. Nanotechnol. 19(10), 6821–6825 (2019). https://doi.org/10.1166/jnn.2019.17126
  36. T. Vy, R. Soklaski, Y. Liang, L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89(23), 235319 (2014). https://doi.org/10.1103/PhysRevB.89.235319
  37. N. Youngblood, C. Chen, S.J. Koester, M. Li, Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current. Nat. Photonics 9(4), 247–252 (2015). https://doi.org/10.1038/nphoton.2015.23
  38. Q. Jiang, L. Xu, N. Chen, H. Zhang, L. Dai, S. Wang, Facile synthesis of black phosphorus: an efficient electrocatalyst for the oxygen evolving reaction. Angew. Chem. Int. Ed. 55(44), 13849–13853 (2016). https://doi.org/10.1002/anie.201607393
  39. H. Mu, S. Lin, Z. Wang, S. Xiao, P. Li et al., Black phosphorus-polymer composites for pulsed lasers. Adv. Opt. Mater. 3(10), 1447–1453 (2015). https://doi.org/10.1002/adom.201500336
  40. J. Shao, H. Xie, H. Huang, Z. Li, Z. Sun et al., Biodegradable black phosphorus-based nanospheres for in vivo photothermal cancer therapy. Nat. Commun. 7, 12967 (2016). https://doi.org/10.1038/ncomms12967
  41. Q. Bao, H. Zhang, Y. Wang, Z. Ni, Y. Yan, Z.X. Shen, K.P. Loh, D.Y. Materials, Atomic-layer graphene as a saturable absorber for ultrafast pulsed lasers. Adv. Funct. Mater. 19(19), 3077–3083 (2009). https://doi.org/10.1002/adfm.200901007
  42. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105(13), 136805 (2010). https://doi.org/10.1103/PhysRevLett.105.136805
  43. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Emerging photoluminescence in monolayer MoS2. Nano Lett. 10(4), 1271–1275 (2010). https://doi.org/10.1021/nl903868w
  44. Z. Wang, D. Gresch, A.A. Soluyanov, W. Xie, S. Kushwaha et al., MoTe2: a type-ii weyl topological metal. Phys. Rev. Lett. 117(5), 056805 (2016). https://doi.org/10.1103/PhysRevLett.117.056805
  45. M. Liu, X.W. Zheng, Y.L. Qi, H. Liu, H. Zhang, Microfiber-based few-layer MoS2 saturable absorber for 2.5 Ghz passively harmonic mode-locked fiber laser. Opt. Express 22(19), 22841–22846 (2014). https://doi.org/10.1364/OE.22.022841
  46. J. Du, Q. Wang, G. Jiang, C. Xu, C. Zhao, Y. Xiang, Y. Chen, S. Wen, H. Zhang, Ytterbium-doped fiber laser passively mode locked by few-layer molybdenum disulfide (MoS2) saturable absorber functioned with evanescent field interaction. Sci. Rep. 4, 6346 (2014). https://doi.org/10.1038/srep06346
  47. L. Lu, Z. Liang, L. Wu, Y. Chen, Y. Song et al., Few-layer bismuthene: sonochemical exfoliation, nonlinear optics and applications for ultrafast photonics with enhanced stability. Laser Photonics Rev. 12(1), 1700221 (2018). https://doi.org/10.1002/lpor.201700221
  48. D.A. Bandurin, A.V. Tyurnina, G.L. Yu, A. Mishchenko, V. Zolyomi et al., High electron mobility, quantum hall effect and anomalous optical response in atomically thin InSe. Nat. Nanotechnol. 12(3), 223–227 (2017). https://doi.org/10.1038/nnano.2016.242
  49. X. Zhou, L. Gan, W. Tian, Q. Zhang, S. Jin, H. Li, Y. Bando, D. Golberg, T. Zhai, Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors. Adv. Mater. 27(48), 8035–8041 (2015). https://doi.org/10.1002/adma.201503873
  50. W. Chen, H. Luo, Z. Han, C. Li, L. Yong, Passively Q-switched mid-infrared fluoride fiber laser around 3 μm using a tungsten disulfide (WS2) saturable absorber. Laser Phys. Lett. 13(10), 105108 (2016). https://doi.org/10.1088/1612-2011/13/10/105108
  51. Y. Tan, Z. Guo, L. Ma, H. Zhang, S. Akhmadaliev, S. Zhou, F. Chen, Q-switched waveguide laser based on two-dimensional semiconducting materials: tungsten disulfide and black phosphorous. Opt. Express 24(3), 2858–2866 (2016). https://doi.org/10.1364/OE.24.002858
  52. D. Mao, Y. Wang, C. Ma, L. Han, B. Jiang et al., WS2 mode-locked ultrafast fiber laser. Sci. Rep. 5, 7965 (2015). https://doi.org/10.1038/srep07965
  53. Y.J. Zhu, W.W. Wang, R.J. Qi, X.L. Hu, Microwave-assisted synthesis of single-crystalline tellurium nanorods and nanowires in ionic liquids. Angew. Chem. Int. Ed. 43(11), 1410–1414 (2004). https://doi.org/10.1002/anie.200353101
  54. M.S. Mo, J.H. Zeng, X.M. Liu, W.C. Yu, S.Y. Zhang, Y.T. Qian, Controlled hydrothermal synthesis of thin single-crystal tellurium nanobelts and nanotubes. Adv. Mater. 14(22), 1658–1662 (2002). https://doi.org/10.1002/1521-4095(20021118)14:22%3c1658:Aid-adma1658%3e3.0.Co;2-2
  55. B. Mayers, Y.N. Xia, One-dimensional nanostructures of trigonal tellurium with various morphologies can be synthesized using a solution-phase approach. J. Mater. Chem. 12(6), 1875–1881 (2002). https://doi.org/10.1039/b201058e
  56. H.S. Qian, S.H. Yu, J.Y. Gong, L.B. Luo, L.F. Fei, High-quality luminescent tellurium nanowires of several nanometers in diameter and high aspect ratio synthesized by a poly (vinyl pyrrolidone)-assisted hydrothermal process. Langmuir 22(8), 3830–3835 (2006). https://doi.org/10.1021/la053021l
  57. Z. Wang, L. Wang, J. Huang, H. Wang, L. Pan, X. Wei, Formation of single-crystal tellurium nanowires and nanotubes via hydrothermal recrystallization and their gas sensing properties at room temperature. J. Mater. Chem. 20(12), 2457–2463 (2010). https://doi.org/10.1039/b924462j
  58. Q.Y. Lu, F. Gao, S. Komarneni, A green chemical approach to the synthesis of tellurium nanowires. Langmuir 21(13), 6002–6005 (2005). https://doi.org/10.1021/la050594p
  59. Y. Zhang, F. Zhang, L. Wu, Y. Zhang, W. Huang et al., Van der waals integration of bismuth quantum dots-decorated tellurium nanotubes (Te@Bi) heterojunctions and plasma-enhanced optoelectronic applications. Small 15(27), 1903233 (2019). https://doi.org/10.1002/smll.201903233
  60. D.H. Webber, R.L. Brutchey, Photolytic preparation of tellurium nanorods. Chem. Commun. 38, 5701–5703 (2009). https://doi.org/10.1039/b912434a
  61. C. Metraux, B. Grobety, Tellurium nanotubes and nanorods synthesized by physical vapor deposition. J. Mater. Res. 19(7), 2159–2164 (2004). https://doi.org/10.1557/jmr.2004.0277
  62. R.B. Zheng, W.L. Cheng, E.K. Wang, S.J. Dong, Synthesis of tellurium nanorods via spontaneous oxidation of NaHTe at room temperature. Chem. Phys. Lett. 395(4–6), 302–305 (2004). https://doi.org/10.1016/j.cplett.2004.07.091
  63. Z.L. Zhu, X.L. Cai, S. Yi, Y.L. Chen, Y.W. Dai et al., Multivalency-driven formation of Te-based monolayer materials: a combined first-principles and experiment study. Phys. Rev. Lett. 119, 106101 (2017). https://doi.org/10.1103/PhysRevLett.119.106101
  64. J. Qiao, Y. Pan, F. Yang, C. Wang, Y. Chai, W. Ji, Few-layer tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties. Sci. Bull. 63(3), 159–168 (2018). https://doi.org/10.1016/j.scib.2018.01.010
  65. A. Khandelwal, K. Mani, M.H. Karigerasi, I. Lahiri, Phosphorene—the two-dimensional black phosphorous: properties, synthesis and applications. Mater. Sci. Eng. B Adv. Funct. Solid State Mater. 221, 17–34 (2017). https://doi.org/10.1016/j.mseb.2017.03.011
  66. A. Apte, E. Bianco, A. Krishnamoorthy, S. Yazdi, R. Rao et al., Polytypism in ultrathin tellurium. 2D Mater. 6(1), 015013 (2018). https://doi.org/10.1088/2053-1583/aae7f6
  67. Q. Wang, M. Safdar, K. Xu, M. Mirza, Z. Wang, J. He, Van der waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets. ACS Nano 8(7), 7497–7505 (2014). https://doi.org/10.1021/nn5028104
  68. X. Huang, J. Guan, Z. Lin, B. Liu, S. Xing, W. Wang, J. Guo, Epitaxial growth and band structure of te film on graphene. Nano Lett. 17(8), 4619–4623 (2017). https://doi.org/10.1021/acs.nanolett.7b01029
  69. W. Huang, C. Xing, Y. Wang, Z. Li, Facile fabrication and characterizations of two-dimensional bismuth (iii) sulfide nanosheets for high-performance photodetector applications under ambient conditions. Nanoscale 10(5), 1702082 (2017). https://doi.org/10.1039/C7NR09046C
  70. Y. Xu, Z. Wang, Z. Guo, H. Huang, Q. Xiao, H. Zhang, X.F. Yu, Solvothermal synthesis and ultrafast photonics of black phosphorus quantum dots. Adv. Opt. Mater. 4, 1223–1229 (2014). https://doi.org/10.1002/adom.201600214
  71. W. Wu, G. Qiu, Y. Wang, R. Wang, P. Ye, Tellurene: its physical properties, scalable nanomanufacturing, and device applications. Chem. Soc. Rev. 47(19), 7203–7212 (2018). https://doi.org/10.1039/c8cs00598b
  72. Z. Guo, Z. Han, S. Lu, Z. Wang, P.K. Chu, From black phosphorus to phosphorene: basic solvent exfoliation, evolution of Raman scattering, and applications to ultrafast photonics. Adv. Funct. Mater. 25(45), 6996–7002 (2015). https://doi.org/10.1002/adfm.201502902
  73. J. Li, H. Luo, B. Zhai, R. Lu, Z. Guo, H. Zhang, Y. Liu, Black phosphorus: a two-dimension saturable absorption material for mid-infrared Q-switched and mode-locked fiber lasers. Sci. Rep. 6, 30361 (2016). https://doi.org/10.1038/srep30361
  74. Y. Ge, S. Chen, Y. Xu, Z. He, Z. Liang et al., Few-layer selenium-doped black phosphorus: synthesis, nonlinear optical properties and ultrafast photonics applications. J. Mater. Chem. C 5, 6103–6388 (2017). https://doi.org/10.1039/c7tc01267e
  75. Z. Xie, C. Xing, W. Huang, T. Fan, Z. Li et al., Ultrathin 2d nonlayered tellurium nanosheets: facile liquid-phase exfoliation, characterization, and photoresponse with high performance and enhanced stability. Adv. Funct. Mater. 28(16), 1705833 (2018). https://doi.org/10.1002/adfm.201705833
  76. R.W. Dutton, R.S. Muller, Electrical properties of tellurium thin films. Proc. IEEE 59(10), 1511–1517 (1971). https://doi.org/10.1109/PROC.1971.8463
  77. K. Okuyama, Y. Kumagai, Grain growth of evaporated Te films on a heatedand cooled substrate. J. Appl. Phys. 46, 1473–1477 (1975). https://doi.org/10.1063/1.321786
  78. P. Weimer, A p-type tellurium thin-film transistor. Proc. IEEE 52(5), 608–609 (1964). https://doi.org/10.1109/PROC.1964.3003
  79. Q.Y. He, Y. Liu, C.L. Tan, W. Zhai, G.H. Nam, H. Zhang, Quest for p-Type two-dimensional semiconductors. ACS Nano 13, 12294–12300 (2019). https://doi.org/10.1021/acsnano.9b07618
  80. J. Lee, K.F. Mak, J. Shan, Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nat. Nano 11(5), 421–425 (2016). https://doi.org/10.1038/NNANO.2015.337
  81. D.K. Sang, B. Wen, S. Gao, Y. Zeng, F. Meng, Z. Guo, H. Zhang, Electronic and optical properties of two-dimensional tellurene: from first-principles calculations. Nanomaterials 9(8), 1075 (2019). https://doi.org/10.3390/nano9081075
  82. Z. Zhu, C. Cai, C. Niu, C. Wang, Q. Sun, X. Han, Z. Guo, Y. Jia, Tellurene-a monolayer of tellurium from first-principles prediction (2016). arXiv preprint https://arxiv.org/abs/1605.03253v1
  83. L. Xian, A. Perez Paz, E. Bianco, P.M. Ajayan, A. Rubio, Square selenene and tellurene: novel group VIelemental 2D materials with nontrivial topological properties. 2D Mater. 4(4), 041003 (2017). https://doi.org/10.1088/2053-1583/aa8418
  84. Y. Liu, W. Wu, W.A. Goddard III, Tellurium: fast electrical and atomic transport along the weak interaction direction. J. Am. Chem. Soc. 140(2), 550–553 (2018). https://doi.org/10.1021/jacs.7b09964
  85. X. Zhang, Y. Pan, Y. Meng, R. Quhe, Y. Wang et al., Three-layer phosphorene-metal interfaces. Nano Res. 11, 707–721 (2018). https://doi.org/10.1007/s12274-017-1680-6
  86. J.N. Ma, Y. He, Y. Liu, D.D. Han, Y.L. Zhang, Facile fabrication of flexible graphene FETs by sunlight reduction of graphene oxide. Opt. Lett. 42(17), 3403–3406 (2017). https://doi.org/10.1364/OL.42.003403
  87. B. Peng, H. Zhang, H. Shao, Y. Xu, R. Zhang, H. Zhua, The electronic, optical, and thermodynamic properties of borophene from first-principles calculations. J. Mater. Chem. C 4(16), 3592–3598 (2016). https://doi.org/10.1039/c6tc00115g
  88. K. Yang, S. Cahangirov, A. Cantarero, A. Rubio, R.D. Agosta, Thermoelectric properties of atomically thin silicene and germanene nanostructures. Phys. Rev. B 89(12), 125403 (2014). https://doi.org/10.1103/PhysRevB.89.125403
  89. Y.D. Kuang, L. Lindsay, S.Q. Shi, G.P. Zheng, Tensile strains give rise to strong size effects for thermal conductivities of silicene, germanene and stanine. Nanoscale 8(6), 3760–3767 (2016). https://doi.org/10.1039/c5nr08231e
  90. J. Zheng, F. Chi, Y. Guo, Exchange and electric fields enhanced spin thermoelectric performance of germanene nano-ribbon. J. Phys.-Condens. Matter 27(29), 295302 (2015). https://doi.org/10.1088/0953-8984/27/29/295302
  91. K. Zberecki, M. Wierzbicki, J. Barnas, R. Swirkowicz, Thermoelectric effects in silicene nanoribbons. Phys. Rev. B 88(11), 115404 (2013). https://doi.org/10.1103/PhysRevB.88.115404
  92. S. Zhang, S. Guo, Z. Chen, Y. Wang, H. Gao et al., Recent progress in 2D group-Va semiconductors: from theory to experiment. Chem. Soc. Rev. 47(3), 982–1021 (2018). https://doi.org/10.1039/c7cs00125h
  93. B. Peng, H. Zhang, H. Shao, K. Xu, G. Ni, J. Li, H. Zhu, C.M. Soukoulis, Chemical intuition for high thermoelectric performance in monolayer black phosphorus, alpha-arsenene and aw-antimonene. J. Mater. Chem. A 6(5), 2018–2033 (2018). https://doi.org/10.1039/c7ta09480a
  94. Z. Gao, F. Tao, J. Ren, Unusually low thermal conductivity of atomically thin 2d tellurium. Nanoscale 10(27), 12997–13003 (2018). https://doi.org/10.1039/c8nr01649f
  95. S. Sharma, N. Singh, U. Schwingenschlögl, Two-dimensional tellurene as excellent thermoelectric material. ACS Appl. Energy Mater. 1(5), 1950–1954 (2018). https://doi.org/10.1021/acsaem.8b00032
  96. Y. Zhang, F. Zhang, Y. Xu, W. Huang, L. Wu, Y. Zhang, X. Zhang, H. Zhang, Self-healable black phosphorus photodetectors. Adv. Funct. Mater. 29, 1906610 (2019). https://doi.org/10.1002/adfm.201906610
  97. X. Zeng, M. Luo, G. Liu, X. Wang, W. Tao, Y. Lin, X. Ji, L. Nie, L. Mei, Polydopamine-modified black phosphorous nanocapsule with enhanced stability and photothermal performance for tumor multimodal treatments. Adv. Sci. 5(10), 1800510 (2018). https://doi.org/10.1002/advs.201800510
  98. J.E.S. Fonsaca, S.H. Domingues, E.S. Orth, A.J.G. Zarbin, Air stable black phosphorous in polyaniline-based nanocomposite. Sci. Rep. 7, 10165 (2017). https://doi.org/10.1038/s41598-017-10533-5
  99. H. Yang, Y. Zhang, F. Hu, Q. Wang, Urchin-like cop nanocrystals as hydrogen evolution reaction and oxygen reduction reaction dual-electrocatalyst with superior stability. Nano Lett. 15(11), 7616–7620 (2015). https://doi.org/10.1021/acs.nanolett.5b03446
  100. L. Liu, J. Tang, Q.-Q. Wang, D.-X. Shi, G.-Y. Zhang, Thermal stability of MoS2 encapsulated by graphene. Acta Phys. Sin. 67(22), 226501 (2018). https://doi.org/10.7498/aps.67.20181255
  101. Y.C. Liu, V. Wang, M.G. Xia, S.L. Zhang, First-principles study on structural, thermal, mechanical and dynamic stability of t’-MoS2. J. Phys.-Condens. Matter 29(9), 095702 (2017). https://doi.org/10.1088/1361-648X/aa5213
  102. P. Budania, P. Baine, J. Montgomery, C. McGeough, T. Cafolla et al., Long-term stability of mechanically exfoliated MoS2 flakes. MRS Commun. 7(4), 813–818 (2017). https://doi.org/10.1557/mrc.2017.105
  103. K.F. Mak, M.Y. Sfeir, Y. Wu, C.H. Lui, J.A. Misewich, T.F. Heinz, Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 101(19), 196405 (2008). https://doi.org/10.1103/physrevlett.101.196405
  104. Y. Xu, Z. Shi, X. Shi, K. Zhang, H. Zhang, Recent progress in black phosphorus and black-phosphorus-analogue materials: properties, synthesis and applications. Nanoscale 11(31), 14491–14527 (2019). https://doi.org/10.1039/c9nr04348a
  105. Y. Hong, J. Zhang, X.C. Zeng, Thermal conductivity of monolayer MoSe2 and MoS2. J. Phys. Chem. C 120(45), 26067–26075 (2016). https://doi.org/10.1021/acs.jpcc.6b07262
  106. D. Lim, E.S. Kannan, I. Lee, S. Rathi, L. Li et al., High performance MoS2-based field-effect transistor enabled by hydrazine doping. Nanotechnology 27(22), 225201 (2016). https://doi.org/10.1088/0957-4484/27/22/225201
  107. S. Hong, H. Im, Y.K. Hong, N. Liu, S. Kim, J.H. Park, N-type doping effect of CVD-grown multilayer MoSe2 thin film transistors by two-step functionalization. Adv. Electron. Mater. 4(12), 1800308 (2018). https://doi.org/10.1002/aelm.201800308
  108. S. Larentis, B. Fallahazad, E. Tutuc, Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl. Phys. Lett. 101(22), 223104 (2012). https://doi.org/10.1063/1.4768218
  109. M.W. Iqbal, M.Z. Iqbal, M.F. Khan, M.A. Shehzad, Y. Seo, J.H. Park, C. Hwang, J. Eom, High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BNfilms. Sci. Rep. 5, 10699 (2015). https://doi.org/10.1038/srep10699
  110. H.M. Khalil, M.F. Khan, J. Eom, H. Noh, Highly stable and tunable chemical doping of multilayer WS2 field effect transistor: reduction in contact resistance. ACS Appl. Mater. Interfaces 7(42), 23589–23596 (2015). https://doi.org/10.1021/acsami.5b06825
  111. H.H. Huang, X. Fan, D.J. Singh, W.T. Zheng, Recent progress of TMD nanomaterials: phase transitions and applications. Nanoscale 12, 1247–1268 (2019). https://doi.org/10.1039/c9nr08313h
  112. Y. Zhang, Y. Yao, M.G. Sendeku, L. Yin, X. Zhan, F. Wang, Z. Wang, J. He, Recent progress in CVD growth of 2D transition metal dichalcogenides and related heterostructures. Adv. Mater. 31(41), e1901694 (2019). https://doi.org/10.1002/adma.201901694
  113. M. Long, P. Wang, H. Fang, W.J. Hu, Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater. 29(19), 1803807 (2019). https://doi.org/10.1002/adfm.201803807
  114. Z. Sun, H. Chang, Graphene and graphene-like two-dimensional materials in photodetection: mechanisms and methodology. ACS Nano 8(5), 4133–4156 (2014). https://doi.org/10.1021/nn500508c
  115. F.H.L. Koppens, T. Mueller, P. Avouris, A.C. Ferrari, M.S. Vitiello, M. Polini, Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9(10), 780–793 (2014). https://doi.org/10.1038/nnano.2014.215
  116. X. Ren, Z. Li, Z. Huang, D. Sang, H. Qiao, X. Qi, J. Li, J. Zhong, H. Zhang, Environmentally robust black phosphorus nanosheets in solution: application for self-powered photodetector. Adv. Funct. Mater. 27(18), 1606834 (2017). https://doi.org/10.1002/adfm.201606834
  117. Z. Li, H. Qiao, Z. Guo, X. Ren, Z. Huang et al., High-performance photo-electrochemical photodetector based on liquid-exfoliated few-layered InSe nanosheets with enhanced stability. Adv. Funct. Mater. 28(16), 1705237 (2018). https://doi.org/10.1002/adfm.201705237
  118. L. Ye, H. Li, Z. Chen, J. Xu, Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics 3(4), 692–699 (2016). https://doi.org/10.1021/acsphotonics.6b00079
  119. Q. Guo, A. Pospischil, M. Bhuiyan, H. Jiang, H. Tian et al., Black phosphorus mid-infrared photodetectors with high gain. Nano Lett. 16(7), 4648–4655 (2016). https://doi.org/10.1021/acs.nanolett.6b01977
  120. X. Chen, X. Lu, B. Deng, O. Sinai, Y. Shao et al., Widely tunable black phosphorus mid-infrared photodetector. Nat. Commun. 8, 1672 (2017). https://doi.org/10.1038/s41467-017-01978-3
  121. W. Huang, C. Xing, Y. Wang, Z. Li, L. Wu et al., Facile fabrication and characterization of two-dimensional bismuth(iii) sulfide nanosheets for high-performance photodetector applications under ambient conditions. Nanoscale 10(5), 2404–2412 (2018). https://doi.org/10.1039/c7nr09046c
  122. Z. Huang, W. Han, H. Tang, L. Ren, D.S. Chander, X. Qi, H. Zhang, Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure. 2D Mater. 2(3), 035011 (2015). https://doi.org/10.1088/2053-1583/2/3/035011
  123. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 8(7), 497–501 (2013). https://doi.org/10.1038/nnano.2013.100
  124. K. Roy, M. Padmanabhan, S. Goswami, T.P. Sai, G. Ramalingam, S. Raghavan, A. Ghosh, Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 8(11), 826–830 (2013). https://doi.org/10.1038/nnano.2013.206
  125. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7(11), 699–712 (2012). https://doi.org/10.1038/nnano.2012.193
  126. D. Jariwala, V.K. Sangwan, L.J. Lauhon, T.J. Marks, M.C. Hersam, Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8(2), 1102–1120 (2014). https://doi.org/10.1021/nn500064s
  127. W. Zhang, J.-K. Huang, C.-H. Chen, Y.-H. Chang, Y.-J. Cheng, L.-J. Li, High-gain phototransistors based on a CVDMoS2 monolayer. Adv. Mater. 25(25), 3456–3461 (2013). https://doi.org/10.1002/adma.201301244
  128. Y.-Q. Bie, G. Grosso, M. Heuck, M.M. Furchi, Y. Cao et al., A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits. Nat. Nanotechnol. 12(12), 1124–1129 (2017). https://doi.org/10.1038/nnano.2017.209
  129. H. Huang, J. Wang, W. Hu, L. Liao, P. Wang et al., Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect. Nanotechnology 27(44), 445201 (2016). https://doi.org/10.1088/0957-4484/27/44/445201
  130. W. Yu, S. Li, Y. Zhang, W. Ma, T. Sun, J. Yuan, K. Fu, Q. Bao, Near-infrared photodetectors based on MoTe2/graphene heterostructure with high responsivity and flexibility. Small 13(24), 1700268 (2017). https://doi.org/10.1002/smll.201700268
  131. K. Zhang, X. Fang, Y. Wang, Y. Wan, Q. Song et al., Ultrasensitive near-infrared photodetectors based on a graphene-MoTe2-graphene vertical van der waals heterostructure. ACS Appl. Mater. Interfaces 9(6), 5392–5398 (2017). https://doi.org/10.1021/acsami.6b14483
  132. F. Bonaccorso, Z. Sun, T. Hasan, A.C. Ferrari, Graphene photonics and optoelectronics. Nat. Photonics 4(9), 611–622 (2010). https://doi.org/10.1038/nphoton.2010.186
  133. F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, P. Avouris, Ultrafast graphene photodetector. Nat. Nanotechnol. 4(12), 839–843 (2009). https://doi.org/10.1038/nnano.2009.292
  134. T. Mueller, F. Xia, P. Avouris, Graphene photodetectors for high-speed optical communications. Nat. Photonics 4(5), 297–301 (2010). https://doi.org/10.1038/nphoton.2010.40
  135. T. Low, P. Avouris, Graphene plasmonics for terahertz to mid-infrared applications. ACS Nano 8(2), 1086–1101 (2014). https://doi.org/10.1021/nn406627u
  136. L. Vicarelli, M.S. Vitiello, D. Coquillat, A. Lombardo, A.C. Ferrari et al., Graphene field-effect transistors as room-temperature terahertz detectors. Nat. Mater. 11(10), 865–871 (2012). https://doi.org/10.1038/nmat3417
  137. S. Deckoff-Jones, Y. Wang, H. Lin, W. Wu, J. Hu, Tellurene: a multifunctional material for midinfrared optoelectronics. ACS Photonics 6(7), 1632–1638 (2019). https://doi.org/10.1021/acsphotonics.9b00694
  138. W. Huang, Y. Zhang, Q. You, P. Huang, Y. Wang et al., Enhanced photodetection properties of tellurium@selenium roll-to-roll nanotube heterojunctions. Small 15(23), e1900902 (2019). https://doi.org/10.1002/smll.201900902
  139. Y. Zhang, F. Zhang, L. Wu, Y. Zhang, W. Huang et al., Van der waals integration of bismuth quantum dots-decorated tellurium nanotubes (Te@Bi) heterojunctions and plasma-enhanced optoelectronic applications. Small 15, e1903233 (2019). https://doi.org/10.1002/smll.201903233
  140. Y. Zhang, F. Zhang, Y. Xu, W. Huang, L. Wu et al., Epitaxial growth of topological insulators on semiconductors (Bi2Se3/Te@Se) toward high-performance photodetectors. Small Methods 3, 1900349 (2019). https://doi.org/10.1002/smtd.201900349
  141. C.H. Liu, Y.C. Chang, T.B. Norris, Z. Zhong, Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat. Nanotechnol. 9(4), 273–278 (2014). https://doi.org/10.1038/nnano.2014.31
  142. M. Buscema, D.J. Groenendijk, S.I. Blanter, G.A. Steele, H.S. van der Zant, A. Castellanos-Gomez, Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14(6), 3347–3352 (2014). https://doi.org/10.1021/nl5008085
  143. L. Li, Y. Yu, G.J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X.H. Chen, Y. Zhang, Black phosphorus field-effect transistors. Nat. Nanotechnol. 9(5), 372–377 (2014). https://doi.org/10.1038/nnano.2014.35
  144. M. Long, Room temperature high-detectivity mid-infraredphotodetectors based on black arsenic phosphorus. Sci. Adv. 3(6), e1700589 (2017). https://doi.org/10.1126/sciadv.1700589
  145. S. Yuan, C. Shen, B. Deng, X. Chen, Q. Guo et al., Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBNheterostructures. Nano Lett. 18(5), 3172–3179 (2018). https://doi.org/10.1021/acs.nanolett.8b00835
  146. J. Bullock, M. Amani, J. Cho, Y.-Z. Chen, G.H. Ahn et al., Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature. Nat. Photonics 12(10), 601–607 (2018). https://doi.org/10.1038/s41566-018-0239-8
  147. X.C. Liu, D.S. Qu, H.M. Li, I. Moon, F. Ahmed et al., Modulation of quantum tunneling via a vertical two-dimensional black phosphorusand molybdenum disulfide p-n junction. ACS Nano 11(9), 9143–9150 (2017). https://doi.org/10.1021/acsnano.7b03994
  148. W. Wang, A. Klots, D. Prasai, Y. Yang, K.I. Bolotin, J. Valentine, Hot electron-based near-infrared photodetection using bilayer MoS2. Nano Lett. 15(11), 7440–7444 (2015). https://doi.org/10.1021/acs.nanolett.5b02866
  149. M. Long, Y. Wang, P. Wang, X. Zhou, H. Xia et al., Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability. ACS Nano 13(2), 2511–2519 (2019). https://doi.org/10.1021/acsnano.8b09476
  150. A.D. Oyedele, S. Yang, L. Liang, A.A. Puretzky, K. Wang et al., PdSe2: pentagonal Two-Dimensional Layers with High Air Stabilityfor Electronics. J. Am. Chem. Soc. 139(40), 14090–14097 (2017). https://doi.org/10.1021/jacs.7b04865
  151. N. Perea-López, A.L. Elías, A. Berkdemir, A. Castro-Beltran, H.R. Gutiérrez et al., Photosensor device based on few-layered WS2films. Adv. Funct. Mater. 23(44), 5511–5517 (2013). https://doi.org/10.1002/adfm.201300760
  152. H.C.P. Movva, A. Rai, S. Kang, K. Kim, B. Fallahazad et al., High-mobility holes in dual-gated WSe2 field-effect transistors. ACS Nano 9(10), 10402–10410 (2015). https://doi.org/10.1021/acsnano.5b04611
  153. Z. Zheng, T. Zhang, J. Yao, Y. Zhang, J. Xu, G. Yang, Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices. Nanotechnology 27(22), 225501 (2016). https://doi.org/10.1088/0957-4484/27/22/225501
  154. T.F. Yang, B.Y. Zheng, Z. Wang, T. Xu, C. Pan et al., Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions. Nat. Commun. 8(1), 1–9 (2017). https://doi.org/10.1038/s41467-017-02093-z
  155. X. Zhou, X. Hu, S. Zhou, H. Song, Q. Zhang et al., Tunneling diode based on WSe2/SnS2 heterostructure incorporating high detectivity and responsivity. Adv. Mater. 30(7), 1703286 (2018). https://doi.org/10.1002/adma.201703286
  156. F. Schwierz, Graphene transistors. Nat. Nanotechnol. 5(7), 487–496 (2010). https://doi.org/10.1038/nnano.2010.89
  157. Y.G. Lee, S.K. Lim, C.G. Kang, Y.J. Kim, D.H. Choi, H.-J. Chung, R. Choi, B.H. Lee, Origin of the channel width dependent field effect mobility of graphene field effect transistors. Microelectron. Eng. 163, 55–59 (2016). https://doi.org/10.1016/j.mee.2016.06.004
  158. L. Britnell, R.V. Gorbachev, R. Jalil, B.D. Belle, F. Schedin et al., Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335(6071), 947–950 (2012). https://doi.org/10.1126/science.1218461
  159. Z. Guo, S. Chen, Z. Wang, Z. Yang, F. Liu et al., Metal-ion-modified black phosphorus with enhanced stability and transistor performance. Adv. Mater. 29, 1703811 (2017). https://doi.org/10.1002/adma.201703811
  160. Y. Xu, Z. Shi, X. Shi, K. Zhang, Z. Han, Recent progress in black phosphorus and black-phosphorus-analogue materials: properties, synthesis and applications. Nanoscale 11, 14491–14527 (2019). https://doi.org/10.1039/c9nr04348a
  161. J. Li, X. Sun, C. Xu, X. Zhang, Y. Pan et al., Electrical contacts in monolayer blue phosphorene devices. Nano Res. 11, 1834–1849 (2018). https://doi.org/10.1007/s12274-017-1801-2
  162. H.D. Wang, D.K. Sang, Z.N. Guo, R. Cao, J.L. Zhao et al., Black phosphorus-based field effect transistor devices for Ag ions detection. Chin. Phys. B 27(8), 087308 (2018). https://doi.org/10.1088/1674-1056/27/8/087308
  163. W. Huang, Z. Xie, T. Fan, J. Li, Y. Wang et al., Black-phosphorus-analogue tin monosulfide: an emerging optoelectronic two-dimensional material for high-performance photodetection with improved stability under ambient/harsh conditions. J. Mater. Chem. C 6(36), 9582–9593 (2018). https://doi.org/10.1039/c8tc03284j
  164. B. Tang, Z.G. Yu, L. Huang, J. Chai, S.L. Wong et al., Direct n- to p-type channel conversion in monolayer/few-layer WS2 field-effect transistors by atomic nitrogen treatment. ACS Nano 12(3), 2506–2513 (2018). https://doi.org/10.1021/acsnano.7b08261
  165. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 6(3), 147–150 (2011). https://doi.org/10.1038/nnano.2010.279
  166. H.M. Li, D.Y. Lee, M.S. Choi, D.S. Qu, X.C. Liu et al., Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor. IEEE Int. Electron Devices Meet. 13, 507–510 (2013). https://doi.org/10.1109/IEDM.2013.6724662
  167. Y.W. Lan, C.M. Torres, S.H. Tsai, X. Zhu, Y. Shi et al., Atomic-monolayer MoS2 band-to-band tunneling field-effect transistor. Small 12(41), 5676–5683 (2016). https://doi.org/10.1002/smll.201601310
  168. M. Strojnik, A. Kovic, A. Mrzel, J. Buh, J. Strle, D. Mihailovic, MoS2 nanotube field effect transistors. AIP Adv. 4(9), 097114 (2014). https://doi.org/10.1063/1.4894440
  169. W. Feng, W. Zheng, W. Cao, P. Hu, Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Adv. Mater. 26(38), 6587–6593 (2014). https://doi.org/10.1002/adma.201402427
  170. S. Sucharitakul, N.J. Goble, U.R. Kumar, R. Sankar, Z.A. Bogorad, F.-C. Chou, Y.-T. Chen, X.P.A. Gao, Intrinsic electron mobility exceeding 103 cm2/(Vs) in multilayer InSe FETs. Nano Lett. 15(6), 3815–3819 (2015). https://doi.org/10.1021/acs.nanolett.5b00493
  171. W. Feng, X. Zhou, W.Q. Tian, W. Zheng, P. Hu, Performance improvement of multilayer InSe transistors with optimized metal contacts. Phys. Chem. Chem. Phys. 17(5), 3653–3658 (2015). https://doi.org/10.1039/c4cp04968c
  172. J. Liu, C. Xia, H. Li, A. Pan, High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnology 27(34), 34lt01 (2016). https://doi.org/10.1088/0957-4484/27/34/34lt01
  173. Y. Du, J. Maassen, W. Wu, Z. Luo, X. Xu, P.D. Ye, Auxetic black phosphorus: a 2D material with negative Poisson’s ratio. Nano Lett. 16(10), 6701–6708 (2016). https://doi.org/10.1021/acs.nanolett.6b03607
  174. J. Yan, X. Zhang, Y. Pan, J. Li, B. Shi et al., Monolayer tellurene–metal contacts. J. Mater. Chem. C 6(23), 6153–6163 (2018). https://doi.org/10.1039/c8tc01421c
  175. X. Ren, Y. Wang, Z. Xie, F. Xue, C. Leighton, C.D. Frisbie, Gate-tuned insulator-metal transition in electrolyte-gated transistors based on tellurene. Nano Lett. 19(7), 4738–4744 (2019). https://doi.org/10.1021/acs.nanolett.9b01827
  176. H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang et al., Ultrathin compound semiconductor on insulator layers forhigh-performance nanoscale transistors. Nature 468, 286–289 (2010). https://doi.org/10.1038/nature09541
  177. C.A. Dimitriadis, P.A. Coxon, L. Dozsa, L. Papadimitriou, N. Economou, Performance of thin-film transistors on polysilicon films grown bylow-pressure chemical vapor deposition at various pressures. IEEE Trans. Electron Devices 39(3), 598–606 (1992). https://doi.org/10.1109/16.123484
  178. C. Zhao, C.L. Tan, D.H. Lien, X.H. Song, M. Amani et al., Evaporated tellurium thin films for p-type field-effect transistors and circuits. Nat. Nano 15(1), 53–58 (2020). https://doi.org/10.1038/s41565-019-0585-9
  179. K.-A.N. Duerloo, M.T. Ong, E.J. Reed, Intrinsic piezoelectricity in two-dimensional materials. J. Phys. Chem. Lett. 3(19), 2871–2876 (2012). https://doi.org/10.1021/jz3012436
  180. W. Wu, L. Wang, Y. Li, F. Zhang, L. Lin et al., Piezoelectricity of single-atomic-layer MoSS for energy conversion and piezotronics. Nature 514(7523), 470–474 (2014). https://doi.org/10.1038/nature13792
  181. H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong et al., Observation of piezoelectricity in free-standing monolayer MoS2. Nat. Nanotechnol. 10(2), 151–155 (2015). https://doi.org/10.1038/nnano.2014.309
  182. T.I. Lee, S. Lee, E. Lee, S. Sohn, Y. Lee et al., High-power density piezoelectric energy harvesting using radially strained ultrathin trigonal tellurium nanowire assembly. Adv. Mater. 25(21), 2920–2925 (2013). https://doi.org/10.1002/adma.201300657
  183. W. He, N. Van Huynh, Y.T. Qian, J.S. Hwang, Y.P. Yan, H. Choi, D.J. Kang, Synthesis of ultra-thin tellurium nanoflakes on textiles for high-performance flexible and wearable nanogenerators. Appl. Surf. Sci. 392, 1055–1061 (2017). https://doi.org/10.1016/j.apsusc.2016.09.157
  184. L. Wu, W. Huang, Y. Wang, J. Zhao, D. Ma et al., 2D tellurium based high-performance all-optical nonlinear photonic devices. Adv. Funct. Mater. 29(4), 1806346 (2019). https://doi.org/10.1002/adfm.201806346
  185. J. Guo, J. Zhao, D. Huang, Y. Wang, F. Zhang et al., Two-dimensional tellurium-polymer membrane for ultrafast photonics. Nanoscale 11(13), 6235–6242 (2019). https://doi.org/10.1039/c9nr00736a
  186. M.A. Van Camp, S. Assefa, D.M. Gill, T. Barwicz, S.M. Shank, P.M. Rice, T. Topuria, W.M. Green, Demonstration of electrooptic modulation at 2165 nm using a silicon Mach-Zehnder interferometer. Opt. Express 20(27), 28009–28016 (2012). https://doi.org/10.1364/OE.20.028009
  187. L. Shen, N. Healy, C.J. Mitchell, J.S. Penades, M. Nedeljkovic, G.Z. Mashanovich, A.C. Peacock, Mid-infrared all-optical modulation in low-loss germanium-on-silicon waveguides. Opt. Lett. 40(2), 268–271 (2015). https://doi.org/10.1364/ol.40.000268
  188. M. Nedeljkovic, S. Stankovic, C.J. Mitchell, A.Z. Khokhar, S.A. Reynolds et al., Mid-infrared thermo-optic modulators in SoI. IEEE Photonics Technol. Lett. 26(13), 1352–1355 (2014). https://doi.org/10.1109/lpt.2014.2323702
  189. A. Malik, S. Dwivedi, L. Van Landschoot, M. Munceb, Y. Shimura et al., Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared. Opt. Express 22(23), 28479–28488 (2014). https://doi.org/10.1364/oe.22.028479
  190. Z. Yi, S. Chakravarty, C.J. Chung, R.T. Chen, Miniature mid-infrared thermooptic switch with photonic crystal waveguide based silicon-on-sapphire Mach–Zehnder interferometers, in Proc. SPIE, Opt. Interconnects XVI, vol 9753 (2016), p. 97530Q. https://doi.org/10.1117/12.2214440
  191. W.S. Whitney, M.C. Sherrott, D. Jariwala, W.-H. Lin, H.A. Bechtel, G.R. Rossman, H.A. Atwater, Field effect optoelectronic modulation of quantum-confined carriers in black phosphorus. Nano Lett. 17(1), 78–84 (2017). https://doi.org/10.1021/acs.nanolett.6b03362
  192. R. Peng, K. Khaliji, N. Youngblood, R. Grassi, T. Low, M. Li, Midinfrared electro-optic modulation in few-layer black phosphorus. Nano Lett. 17(10), 6315–6320 (2017). https://doi.org/10.1021/acs.nanolett.7b03050
  193. Y. Yao, R. Shankar, M.A. Kats, Y. Song, J. Kong, M. Loncar, F. Capasso, Electrically tunable metasurface perfect absorbers for ultrathin mid-infrared optical modulators. Nano Lett. 14(11), 6526–6532 (2014). https://doi.org/10.1021/nl503104n
  194. J. Chiles, S. Fathpour, Mid-infrared integrated waveguide modulators based on silicon-on-lithium-niobate photonics. Optica 1(5), 350–355 (2014). https://doi.org/10.1364/optica.1.000350
  195. R. Poudyal, P. Loskot, R. Nepal, R. Parajuli, S.K. Khadka, Mitigating the current energy crisis in Nepal with renewable energy sources. Renew. Sustain. Energy Rev. 116, 109388 (2019). https://doi.org/10.1016/j.rser.2019.109388
  196. S.C. Peter, Reduction of CO2 to chemicals and fuels: a solution to global warming and energy crisis. ACS Energy Lett. 3(7), 1557–1561 (2018). https://doi.org/10.1021/acsenergylett.8b00878
  197. X. Du, X. Zhang, Z. Yang, Y. Gong, Water oxidation catalysis beginning with CuCo2S4: Investigation of the true electrochemically driven catalyst. Chem. Asian J. 13(3), 266–270 (2018). https://doi.org/10.1002/asia.201701684
  198. A. Lawrence, Quasar viscosity crisis. Nat. Astron. 2(2), 102–103 (2018). https://doi.org/10.1038/s41550-017-0372-1
  199. J. Xiong, J. Di, H. Li, Atomically thin 2D multinary nanosheets for energy-related photo, electrocatalysis. Adv. Sci. 5(7), 1800244 (2018). https://doi.org/10.1002/advs.201800244
  200. R. Lei, H. Zhai, J. Nie, W. Zhong, Y. Bai et al., Butterfly-inspired triboelectric nanogenerators with spring-assisted linkage structure for water wave energy harvesting. Adv. Mater. Technol. 4(3), 1800514 (2019). https://doi.org/10.1002/admt.201800514
  201. H. Choi, K. Jeong, J. Chae, H. Park, J. Baeck et al., Enhancement in thermoelectric properties of Te-embedded Bi2Te3 by preferential phonon scattering in heterostructure interface. Nano Energy 47, 374–384 (2018). https://doi.org/10.1016/j.nanoen.2018.03.009
  202. G. Qiu, S. Huang, M. Segovia, P.K. Venuthurumilli, Y. Wang, W. Wu, X. Xu, P.D. Ye, Thermoelectric performance of 2D Tellurium with accumulation contacts. Nano Lett. 19(3), 1955–1962 (2019). https://doi.org/10.1021/acs.nanolett.8b05144
  203. S. Huang, M. Segovia, X. Yang, Y.R. Koh, Y. Wang et al., Anisotropic thermal conductivity in 2D Tellurium. 2D Mater. 7(1), 015008 (2019). https://doi.org/10.1088/2053-1583/ab4eee
  204. D.K. Sang, T. Ding, M.N. Wu, Y. Li, J. Li, F. Liu, Z. Guo, H. Zhang, H. Xie, Monolayer β-tellurene: a promising p-type thermoelectric material via first-principles calculations. Nanoscale 11(39), 18116–18123 (2019). https://doi.org/10.1039/c9nr04176a
  205. K.R. Sapkota, P. Lu, D.L. Medlin, G.T. Wang, High temperature synthesis and characterization of ultrathin tellurium nanostructures. APL Mater. 7(8), 081103 (2019). https://doi.org/10.1063/1.5109899
  206. M. Kayyalha, J. Maassen, M. Lundstrom, L. Shi, Y.P. Chen, Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2. J. Appl. Phys. 120(13), 134305 (2016). https://doi.org/10.1063/1.4963364
  207. M.-J. Lee, J.-H. Ahn, J.H. Sung, H. Heo, S.G. Jeon et al., Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity. Nat. Commun. 7, 12011 (2016). https://doi.org/10.1038/ncomms12011
  208. J. Min, C. Zhao, Z. Zeng, Y. Jia, Z. Du, Tunable visible-light excitonic absorption and high photoconversion efficiency in two-dimensional group-VI monolayer materials. Phys. Rev. B 100(8), 085402 (2019). https://doi.org/10.1103/PhysRevB.100.085402
  209. K. Wu, H. Ma, Y. Gao, W. Hu, J. Yang, Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides. J. Mater. Chem. A 7(13), 7430–7436 (2019). https://doi.org/10.1039/c9ta00280d
  210. H. Yang, Y. Ma, Y. Liang, B. Huang, Y. Dai, Monolayer HfTeSe4: a promising two-dimensional photovoltaic material for solar cells with high efficiency. ACS Appl. Mater. Interfaces 11(41), 37901–37907 (2019). https://doi.org/10.1021/acsami.9b14920
  211. Y. Mao, C. Xu, J. Yuan, H. Zhao, A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells. J. Mater. Chem. A 7(18), 11265–11271 (2019). https://doi.org/10.1039/c9ta01219b
  212. J. Dai, X.C. Zeng, Bilayer phosphorene: Effect of stacking order on bandgap and its potential applications in thin-film solar cells. J. Phys. Chem. Lett. 5(7), 1289–1293 (2014). https://doi.org/10.1021/jz500409m
  213. A. Kojima, K. Teshima, Y. Shirai, T. Miyasaka, Organometal halide perovskites as visible-light sensitizers for photovoltaic cells. J. Am. Chem. Soc. 131(17), 6050–6051 (2009). https://doi.org/10.1021/ja809598r
  214. J. Zhao, Y. Li, G. Yang, K. Jiang, H. Lin, H. Ade, W. Ma, H. Yan, Efficient organic solar cells processed from hydrocarbon solvents. Nat. Energy 1(2), 15027 (2016). https://doi.org/10.1038/nenergy.2015.27
  215. Y. Lin, C. Norman, D. Srivastava, F. Azough, L. Wang et al., Thermoelectric power generation from lanthanum strontium titanium oxide at room temperature through the addition of graphene. ACS Appl. Mater. Interfaces 7(29), 15898–15908 (2015). https://doi.org/10.1021/acsami.5b03522
  216. A. Agresti, S. Pescetelli, A.L. Palma, A.E. Del Rio Castillo, D. Konios et al., Graphene interface engineering for perovskite solar modules: 12.6% power conversion efficiency over 50 cm2 active area. ACS Energy Lett. 2(1), 279–287 (2017). https://doi.org/10.1021/acsenergylett.6b00672
  217. L. Valentini, M. Cardinali, S. Bittolo Bon, D. Bagnis, R. Verdejo, M.A. Lopez-Manchado, J.M. Kenny, Use of butylamine modified graphene sheets in polymer solar cells. J. Mater. Chem. 20(5), 995–1000 (2010). https://doi.org/10.1039/b919327h
  218. G. Qin, Q.B. Yan, Z. Qin, S.Y. Yue, H.J. Cui, Q.R. Zheng, G. Su, Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance. Sci. Rep. 4, 6946 (2014). https://doi.org/10.1038/srep06946
  219. H.Y. Lv, W.J. Lu, D.F. Shao, Y.P. Sun, Large thermoelectric power factors in black phosphorus and phosphorene (2014). arXiv preprint https://arxiv.org/abs/1404.5171v1
  220. Y. Yang, J. Gao, Z. Zhang, S. Xiao, H.H. Xie et al., Black phosphorus based photocathodes in wideband bifacial dye-sensitized solar cells. Adv. Mater. 28(40), 8937–8944 (2016). https://doi.org/10.1002/adma.201602382
  221. X. Mettan, R. Pisoni, P. Matus, A. Pisoni, J. Jaćimović et al., Tuning of the thermoelectric figure of merit of CH3NH3MI3 (M=Pb, Sn) photovoltaic perovskites. J. Phys. Chem. C 119(21), 11506–11510 (2015). https://doi.org/10.1021/acs.jpcc.5b03939
  222. T. Okuda, K. Nakanishi, S. Miyasaka, Y. Tokura, Large thermoelectric response of metallic perovskites: Sr1−xLaxTiO3 (0 < ~x < ~0.1). Phys. Rev. B 63(11), 113104 (2001). https://doi.org/10.1103/PhysRevB.63.113104
  223. J.H. Heo, D.H. Song, H.J. Han, S.Y. Kim, J.H. Kim et al., Planar CH3NH3PbI3 perovskite solar cells with constant 17.2% average power conversion efficiency irrespective of the scan rate. Adv. Mater. 27(22), 3424–3430 (2015). https://doi.org/10.1002/adma.201500048
  224. D. Geng, X. Zhao, Z. Chen, W. Sun, W. Fu et al., Direct synthesis of large-area 2D Mo2C on in situ grown graphene. Adv. Mater. 29(35), 1700072 (2017). https://doi.org/10.1002/adma.201700072
  225. C.-K. Chang, S. Kataria, C.-C. Kuo, A. Ganguly, B.-Y. Wang et al., Band gap engineering of chemical vapor deposited graphene by in situ BN doping. ACS Nano 7(2), 1333–1341 (2013). https://doi.org/10.1021/nn3049158
  226. R.S. Weatherup, B.C. Bayer, R. Blume, C. Ducati, C. Baehtz, R. Schlogl, S. Hofmann, In situ characterization of alloy catalysts for low-temperature graphene growth. Nano Lett. 11(10), 4154–4160 (2011). https://doi.org/10.1021/nl202036y
  227. J. Yu, J. Li, W. Zhang, H. Chang, Synthesis of high quality two-dimensional materials via chemical vapor deposition. Chem. Sci. 6(12), 6705–6716 (2015). https://doi.org/10.1039/C5SC01941A
  228. S.G. Sørensen, H.G. Füchtbauer, A.K. Tuxen, A.S. Walton, J.V. Lauritsen, Structure and electronic properties of in situ synthesized single-layer MoS2 on a gold surface. ACS Nano 8(7), 6788–6796 (2014). https://doi.org/10.1021/nn502812n
  229. J. Chen, B. Liu, Y. Liu, W. Tang, C.T. Nai et al., Chemical vapor deposition of large-sized hexagonal WSe2 crystals on dielectric substrates. Adv. Mater. 27(42), 6722–6727 (2015). https://doi.org/10.1002/adma.201503446
  230. Z.-J. Wang, G. Weinberg, Q. Zhang, T. Lunkenbein, A. Klein-Hoffmann et al., Direct observation of graphene growth and associated copper substrate dynamics by in situ scanning electron microscopy. ACS Nano 9(2), 1506–1519 (2015). https://doi.org/10.1021/nn5059826
  231. X. Li, L. Colombo, R.S. Ruoff, Synthesis of graphene films on copper foils by chemical vapor deposition. Adv. Mater. 28(29), 6247–6252 (2016). https://doi.org/10.1002/adma.201504760
  232. A.J. Mannix, Y.B. Kiral, M.C. Hersam, N.P. Guisinger, Synthesis and chemistry of elemental 2D materials. Nat. Rev. Chem. 1(2), 0014 (2017). https://doi.org/10.1038/s41570-016-0014
  233. D. Geng, H. Wang, Y. Wan, Z. Xu, B. Luo, J. Xu, G. Yu, Direct top–down fabrication of large-area graphene arrays by an in situ etching method. Adv. Mater. 27(28), 4195–4199 (2015). https://doi.org/10.1002/adma.201570189
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