Issue

Vol. 16 (2024)

Chalcogenide Ovonic Threshold Switching Selector

https://doi.org/10.1007/s40820-023-01289-x
Zihao Zhao
National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Sergiu Clima
IMEC, Kapedreef 75, Leuven, Belgium
Daniele Garbin
IMEC, Kapedreef 75, Leuven, Belgium
Robin Degraeve
IMEC, Kapedreef 75, Leuven, Belgium
Geoffrey Pourtois
IMEC, Kapedreef 75, Leuven, Belgium
Zhitang Song
National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Min Zhu
National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China

Corresponding Author: Min Zhu

minzhu@mail.sim.ac.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 81

Abstract

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing a brief introduction to the discovery process of the OTS phenomenon. Subsequently, we summarize the key electrical parameters of OTS devices and delve into recent explorations of OTS materials, which are categorized as Se-based, Te-based, and S-based material systems. Furthermore, we discuss various models for the OTS switching mechanism, including field-induced nucleation model, as well as several carrier injection models. Additionally, we review the progress and innovations in OTS mechanism research. Finally, we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications, such as self-selecting memory and neuromorphic computing.


Highlights:
1 The development history and key milestones of ovonic threshold switch (OTS) materials were comprehensively summarized. Combined with the latest advancements of OTS research, the mainstream OTS material systems were systematically introduced.
2 A thorough overview of the prevailing viewpoints regarding the OTS switching mechanisms was presented.
3 Recent progress in OTS devices for applications in 3D memory, self-selecting memory, and neuromorphic computing was summarized.

Keywords

Non-volatile memory Ovonic threshold switch (OTS) Chalcogenide Selector
Zhao, Zihao, Sergiu Clima, Daniele Garbin, Robin Degraeve, Geoffrey Pourtois, Zhitang Song, and Min Zhu. 2024. “Chalcogenide Ovonic Threshold Switching Selector”. Nano-Micro Letters 16 (January):81. https://doi.org/10.1007/s40820-023-01289-x.
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