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Vol. 13 (2021)

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

https://doi.org/10.1007/s40820-021-00660-0
Yanhao Wang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, People’s Republic of China
Jinbo Pang
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan 250022, People’s Republic of China
Qilin Cheng
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan 250022, People’s Republic of China
Lin Han
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, People’s Republic of China
Yufen Li
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan 250022, People’s Republic of China
Xue Meng
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, People’s Republic of China
Bergoi Ibarlucea
Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069 Dresden, Germany
Hongbin Zhao
State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing 100088, People’s Republic of China
Feng Yang
Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People’s Republic of China
Haiyun Liu
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan 250022, People’s Republic of China
Hong Liu
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan 250022, People’s Republic of China
Weijia Zhou
Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan 250022, People’s Republic of China
Xiao Wang
Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055, People’s Republic of China
Mark H. Rummeli
College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, People’s Republic of China
Yu Zhang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, People’s Republic of China
Gianaurelio Cuniberti
Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069 Dresden, Germany

Corresponding Author: Yu Zhang

yuzhang@sdu.edu.cn

Nano-Micro Letters, Vol. 13 (2021), Article Number: 143

Abstract

The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.


Highlights:


1 The structure–property relationship of PdSe2 is discussed, i.e., layer number vs. tunable bandgap, pentagonal structure vs. anisotropy-based polarized light detection.
2 The synthesis approaches of PdSe2 are thoroughly compared, including bottom-up methods such as chemical vapor transport for bulk crystals, chemical vapor deposition for thin films and single-crystal domains, selenization of Pd films. Besides, top-down strategies are discussed, covering the mechanical exfoliation of bulk crystals, plasma thinning, and vacuum annealing as well as phase transition.
3 The emerging devices of PdSe2 and its van der Waals heterostructures have been delivered such as metal/semiconductor contact, Schottky junction transistors, field-effect transistors, photodetectors, p–n junction-based rectifiers, polarized light detector, and infrared image sensors.
4 Future opportunities of PdSe2-based van der Waals heterostructures are given including logic gate-based digital circuits, RF-integrated circuits, Internet of Things, and theoretical calculation as well as big data for materials science.

Keywords

Palladium diselenide nTMDC Synthesis Field-effect transistors Photodetectors Sensors
Wang, Yanhao, Jinbo Pang, Qilin Cheng, Lin Han, Yufen Li, Xue Meng, Bergoi Ibarlucea, Hongbin Zhao, Feng Yang, Haiyun Liu, Hong Liu, Weijia Zhou, Xiao Wang, Mark H. Rummeli, Yu Zhang, and Gianaurelio Cuniberti. 2021. “Applications of 2D-Layered Palladium Diselenide and Its Van Der Waals Heterostructures in Electronics and Optoelectronics”. Nano-Micro Letters 13 (June):143. https://doi.org/10.1007/s40820-021-00660-0.
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References
  1. Y. Saito, J. Ge, K. Watanabe, T. Taniguchi, A.F. Young, Independent superconductors and correlated insulators in twisted bilayer graphene. Nat. Phys. 16(9), 926–930 (2020). https://doi.org/10.1038/s41567-020-0928-3
  2. C. Jin, J. Kim, M.I.B. Utama, E.C. Regan, H. Kleemann et al., Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures. Science 360(6391), 893–896 (2018). https://doi.org/10.1126/science.aao3503
  3. Y. Pang, Z. Yang, Y. Yang, T.L. Ren, Wearable electronics based on 2D materials for human physiological information detection. Small 16(15), 1901124 (2020). https://doi.org/10.1002/smll.201901124
  4. A.V. Agrawal, N. Kumar, M. Kumar, Strategy and future prospects to develop room-temperature-recoverable NO2 gas sensor based on two-dimensional molybdenum disulfide. Nano-Micro Lett. 13(1), 38 (2021). https://doi.org/10.1007/s40820-020-00558-3
  5. N.E. Holden, T.B. Coplen, J.K. Böhlke, L.V. Tarbox, J. Benefield et al., IUPAC periodic table of the elements and isotopes (IPTEI) for the education community (IUPAC Technical Report). Pure Appl. Chem. 90(12), 1833–2092 (2018). https://doi.org/10.1515/pac-2015-0703
  6. K.F. Mak, J. Shan, Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photon. 10(4), 216–226 (2016). https://doi.org/10.1038/nphoton.2015.282
  7. L. Zeng, S. Lin, Z. Lou, H. Yuan, H. Long et al., Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm. NPG Asia Mater. 10(4), 352–362 (2018). https://doi.org/10.1038/s41427-018-0035-4
  8. R. Kempt, A. Kuc, T. Heine, Two-dimensional noble-metal chalcogenides and phosphochalcogenides. Angew. Chem. Int. Ed. 59(24), 9242–9254 (2020). https://doi.org/10.1002/anie.201914886
  9. S. Ahmad, Strain dependent tuning electronic properties of noble metal di chalcogenides PdX2 (X = S, Se) mono-layer. Mater. Chem. Phys. 198(1), 162–166 (2017). https://doi.org/10.1016/j.matchemphys.2017.05.060
  10. L. Zeng, D. Wu, J. Jie, X. Ren, X. Hu et al., Van der Waals epitaxial growth of mosaic-like 2D platinum ditelluride layers for room-temperature mid-infrared photodetection up to 10.6 microm. Adv. Mater. 32(52), 2004412 (2020). https://doi.org/10.1002/adma.202004412
  11. Y. Zhao, J. Qiao, Z. Yu, P. Yu, K. Xu et al., High-electron-mobility and air-stable 2D layered PtSe2 FETs. Adv. Mater. 29(5), 1604230 (2017). https://doi.org/10.1002/adma.201604230
  12. H. Yang, Y. Li, Z. Yang, X. Shi, Z. Lin et al., First-principles calculations of the electronic properties of two-dimensional pentagonal structure XS2 (X=Ni, Pd, Pt). Vacuum 174(1), 109176 (2020). https://doi.org/10.1016/j.vacuum.2020.109176
  13. D. Saraf, S. Chakraborty, A. Kshirsagar, R. Ahuja, In pursuit of bifunctional catalytic activity in PdS2 pseudo-monolayer through reaction coordinate mapping. Nano Energy 49(4), 283–289 (2018). https://doi.org/10.1016/j.nanoen.2018.04.019
  14. M. Ghorbani-Asl, A. Kuc, P. Miro, T. Heine, A single-material logical junction based on 2D Crystal PdS2. Adv. Mater. 28(5), 853–856 (2016). https://doi.org/10.1002/adma.201504274
  15. A.D. Oyedele, S. Yang, L. Liang, A.A. Puretzky, K. Wang et al., PdSe2: pentagonal two-dimensional layers with high air stability for electronics. J. Am. Chem. Soc. 139(40), 14090–14097 (2017). https://doi.org/10.1021/jacs.7b04865
  16. Y. Gu, H. Cai, J. Dong, Y. Yu, A.N. Hoffman et al., Two-dimensional palladium diselenide with strong in-plane optical anisotropy and high mobility grown by chemical vapor deposition. Adv. Mater. 32(19), 1906238 (2020). https://doi.org/10.1002/adma.201906238
  17. W.L. Chow, P. Yu, F. Liu, J. Hong, X. Wang et al., High mobility 2D palladium diselenide field-effect transistors with tunable ambipolar characteristics. Adv. Mater. 29(21), 1602969 (2017). https://doi.org/10.1002/adma.201602969
  18. A.A. Puretzky, A.D. Oyedele, K. Xiao, A.V. Haglund, B.G. Sumpter et al., Anomalous interlayer vibrations in strongly coupled layered PdSe2. 2D Mater. 5(3), 35016 (2018). https://doi.org/10.1088/2053-1583/aabe4d
  19. Q. Liang, Q. Wang, Q. Zhang, J. Wei, S.X. Lim et al., High-performance, room temperature, ultra-broadband photodetectors based on air-stable PdSe2. Adv. Mater. 31(24), 1807609 (2019). https://doi.org/10.1002/adma.201807609
  20. H. Yang, S.W. Kim, M. Chhowalla, Y.H. Lee, Structural and quantum-state phase transitions in van der Waals layered materials. Nat. Phys. 13(10), 931–937 (2017). https://doi.org/10.1038/nphys4188
  21. D. Wu, J. Guo, J. Du, C. Xia, L. Zeng et al., Highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. ACS Nano 13(9), 9907–9917 (2019). https://doi.org/10.1021/acsnano.9b03994
  22. K.L. Tai, J. Chen, Y. Wen, H. Park, Q. Zhang et al., Phase variations and layer epitaxy of 2D PdSe2 GRown on 2D monolayers by direct selenization of molecular Pd precursors. ACS Nano 14(9), 11677–11690 (2020). https://doi.org/10.1021/acsnano.0c04230
  23. M. Jakhar, J. Singh, A. Kumar, K. Tankeshwar, Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure. Nanotechnology 31(14), 145710 (2020). https://doi.org/10.1088/1361-6528/ab5de1
  24. A.M. Afzal, M.Z. Iqbal, S. Mumtaz, I. Akhtar, Multifunctional and high-performance GeSe/PdSe2 heterostructure device with a fast photoresponse. J. Mater. Chem. C 8(14), 4743–4753 (2020). https://doi.org/10.1039/d0tc00004c
  25. D. Wu, C. Jia, F. Shi, L. Zeng, P. Lin et al., Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing. J. Mater. Chem. A 8(7), 3632–3642 (2020). https://doi.org/10.1039/c9ta13611h
  26. L.H. Zeng, Q.M. Chen, Z.X. Zhang, D. Wu, H. Yuan et al., Multilayered PdSe2/perovskite schottky junction for fast, self-powered, polarization-sensitive, broadband photodetectors, and image sensor application. Adv. Sci. 6(19), 1901134 (2019). https://doi.org/10.1002/advs.201901134
  27. J. Sun, H. Shi, T. Siegrist, D.J. Singh, Electronic, transport, and optical properties of bulk and mono-layer PdSe2. Appl. Phys. Lett. 107(15), 153902 (2015). https://doi.org/10.1063/1.4933302
  28. F. Grønvold, E. Røst, The crystal structure of PdSe2 and PdS2. Acta Crystallogr. 10(4), 329–331 (1957). https://doi.org/10.1107/s0365110x57000948
  29. J. Zhong, J. Yu, L. Cao, C. Zeng, J. Ding et al., High-performance polarization-sensitive photodetector based on a few-layered PdSe2 nanosheet. Nano Res. 13(6), 1780–1786 (2020). https://doi.org/10.1007/s12274-020-2804-y
  30. Y. Zhao, J. Qiao, P. Yu, Z. Hu, Z. Lin et al., Extraordinarily strong interlayer interaction in 2D layered PtS2. Adv. Mater. 28(12), 2399–2407 (2016). https://doi.org/10.1002/adma.201504572
  31. A.V. Kuklin, H. Ågren, Quasiparticle electronic structure and optical spectra of single-layer and bilayer PdSe2: Proximity and defect-induced band gap renormalization. Phys. Rev. B 99(24), 2469–9950 (2019). https://doi.org/10.1103/PhysRevB.99.245114
  32. X. Zhao, Q. Zhao, B. Zhao, X. Dai, S. Wei et al., Electronic and optical properties of PdSe2 from monolayer to trilayer. Superlattices Microstr. 142(4), 106514 (2020). https://doi.org/10.1016/j.spmi.2020.106514
  33. W. Lei, B. Cai, H. Zhou, G. Heymann, X. Tang et al., Ferroelastic lattice rotation and band-gap engineering in quasi 2D layered-structure PdSe2 under uniaxial stress. Nanoscale 11(25), 12317–12325 (2019). https://doi.org/10.1039/c9nr03101d
  34. X. Zhao, B. Qiu, G. Hu, W. Yue, J. Ren et al., Spin polarization properties of pentagonal PdSe(2) induced by 3D transition-metal doping: first-principles calculations. Materials 11(11), 2339 (2018). https://doi.org/10.3390/ma11112339
  35. S.-H. Zhang, B.-G. Liu, Hole-doping-induced half-metallic ferromagnetism in a highly-air-stable PdSe2 monolayer under uniaxial stress. J. Mater. Chem. C 6(25), 6792–6798 (2018). https://doi.org/10.1039/c8tc01450g
  36. S. Deng, L. Li, Y. Zhang, Strain modulated electronic, mechanical, and optical properties of the monolayer PdS2, PdSe2, and PtSe2 for tunable devices. ACS Appl. Nano Mater. 1(4), 1932–1939 (2018). https://doi.org/10.1021/acsanm.8b00363
  37. G. Liu, Q.M. Zeng, P.F. Zhu, R.G. Quhe, P.F. Lu, Negative Poisson’s ratio in monolayer PdSe2. Comput. Mater. Sci. 160(1), 309–314 (2019). https://doi.org/10.1016/j.commatsci.2019.01.024
  38. M.A. ElGhazali, P.G. Naumov, H. Mirhosseini, V. Suss, L. Muchler et al., Pressure-induced superconductivity up to 13.1 K in the pyrite phase of palladium diselenide PdSe2. Phys. Rev. B 96(6), 060509 (2017). https://doi.org/10.1103/PhysRevB.96.060509
  39. J. Yu, X. Kuang, Y. Gao, Y. Wang, K. Chen et al., Direct observation of the linear dichroism transition in two-dimensional palladium diselenide. Nano Lett. 20(2), 1172–1182 (2020). https://doi.org/10.1021/acs.nanolett.9b04598
  40. W. Lei, S. Zhang, G. Heymann, X. Tang, J. Wen et al., A new 2D high-pressure phase of PdSe2 with high-mobility transport anisotropy for photovoltaic applications. J. Mater. Chem. C 7(7), 2096–2105 (2019). https://doi.org/10.1039/c8tc06050a
  41. T.S. Walmsley, K. Andrews, T. Wang, A. Haglund, U. Rijal et al., Near-infrared optical transitions in PdSe2 phototransistors. Nanoscale 11(30), 14410–14416 (2019). https://doi.org/10.1039/c9nr03505b
  42. M. Sun, J.P. Chou, L. Shi, J. Gao, A. Hu et al., Few-Layer PdSe2 sheets: promising thermoelectric materials driven by high valley convergence. ACS Omega 3(6), 5971–5979 (2018). https://doi.org/10.1021/acsomega.8b00485
  43. Y. Cai, G. Zhang, Y.W. Zhang, Polarity-reversed robust carrier mobility in monolayer MoS(2) nanoribbons. J. Am. Chem. Soc. 136(17), 6269–6275 (2014). https://doi.org/10.1021/ja4109787
  44. X.-J. Ge, D. Qin, K.-L. Yao, J.-T. Lü, First-principles study of thermoelectric transport properties of monolayer gallium chalcogenides. J. Phys. D-Appl. Phys. 50(40), 405301 (2017). https://doi.org/10.1088/1361-6463/aa85b4
  45. G.D. Nguyen, L. Liang, Q. Zou, M. Fu, A.D. Oyedele et al., 3D imaging and manipulation of subsurface selenium vacancies in PdSe2. Phys. Rev. Lett. 121(8), 086101 (2018). https://doi.org/10.1103/PhysRevLett.121.086101
  46. J. Lin, S. Zuluaga, P. Yu, Z. Liu, S.T. Pantelides et al., Novel Pd2Se3 two-dimensional phase driven by interlayer fusion in layered PdSe2. Phys. Rev. Lett. 119(1), 016101 (2017). https://doi.org/10.1103/PhysRevLett.119.016101
  47. J. Chen, G.H. Ryu, S. Sinha, J.H. Warner, Atomic structure and dynamics of defects and grain boundaries in 2D Pd2Se3 Monolayers. ACS Nano 13(7), 8256–8264 (2019). https://doi.org/10.1021/acsnano.9b03645
  48. S. Zuluaga, J. Lin, K. Suenaga, S.T. Pantelides, Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires. 2D Mater. 5(3), 035025 (2018). https://doi.org/10.1088/2053-1583/aac34c
  49. G.H. Ryu, T. Zhu, J. Chen, S. Sinha, V. Shautsova, Striated 2D lattice with sub-nm 1D etch channels by controlled thermally induced phase transformations of PdSe2. Adv. Mater. 31(46), 1904251 (2019). https://doi.org/10.1002/adma.201904251
  50. V. Shautsova, S. Sinha, L. Hou, Q. Zhang, M. Tweedie et al., Direct laser patterning and phase transformation of 2D PdSe2 films for on-demand device fabrication. ACS Nano 13(12), 14162–14171 (2019). https://doi.org/10.1021/acsnano.9b06892
  51. T. Takabatake, M. Ishikawa, J.L. Jorda, Superconductivity and phase relations in the Pd-Se system. J. Less Common Met. 134(1), 79–89 (1987). https://doi.org/10.1016/0022-5088(87)90444-9
  52. A.D. Oyedele, S. Yang, T. Feng, A.V. Haglund, Y. Gu et al., Defect-mediated phase transformation in anisotropic two-dimensional PdSe2 crystals for seamless electrical contacts. J. Am. Chem. Soc. 141(22), 8928–8936 (2019). https://doi.org/10.1021/jacs.9b02593
  53. D. Wang, F. Luo, M. Lu, X. Xie, L. Huang et al., Chemical vapor transport reactions for synthesizing layered materials and their 2D counterparts. Small 15(40), 1804404 (2019). https://doi.org/10.1002/smll.201804404
  54. M. Long, Y. Wang, P. Wang, X. Zhou, H. Xia et al., Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability. ACS Nano 13(2), 2511–2519 (2019). https://doi.org/10.1021/acsnano.8b09476
  55. M. Velicky, G.E. Donnelly, W.R. Hendren, S. McFarland, D. Scullion et al., Mechanism of gold-assisted exfoliation of centimeter-sized transition-metal dichalcogenide monolayers. ACS Nano 12(10), 10463–10472 (2018). https://doi.org/10.1021/acsnano.8b06101
  56. M. Heyl, D. Burmeister, T. Schultz, S. Pallasch, G. Ligorio et al., Thermally activated gold-mediated transition metal dichalcogenide exfoliation and a unique gold-mediated transfer. Phys. Status Solidi (RRL) 14(11), 2000408 (2020). https://doi.org/10.1002/pssr.202000408
  57. S.B. Desai, S.R. Madhvapathy, M. Amani, D. Kiriya, M. Hettick et al., Gold-mediated exfoliation of ultralarge optoelectronically-perfect monolayers. Adv. Mater. 28(21), 4053–4058 (2016). https://doi.org/10.1002/adma.201506171
  58. Y. Huang, Y.H. Pan, R. Yang, L.H. Bao, L. Meng et al., Universal mechanical exfoliation of large-area 2D crystals. Nat. Commun. 11(1), 2453 (2020). https://doi.org/10.1038/s41467-020-16266-w
  59. D. Zhao, S. Xie, Y. Wang, H. Zhu, L. Chen et al., Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition. AIP Adv. 9(2), 025225 (2019). https://doi.org/10.1063/1.5086447
  60. L. Jia, J. Wu, T. Yang, B. Jia, D.J. Moss, Large third-order optical kerr nonlinearity in nanometer-thick PdSe2 2D dichalcogenide films: implications for nonlinear photonic devices. ACS Appl. Nano Mater. 3(7), 6876–6883 (2020). https://doi.org/10.1021/acsanm.0c01239
  61. J. Zhou, J. Lin, X. Huang, Y. Zhou, Y. Chen et al., A library of atomically thin metal chalcogenides. Nature 556(7701), 355–359 (2018). https://doi.org/10.1038/s41586-018-0008-3
  62. L.H. Zeng, D. Wu, S.H. Lin, C. Xie, H.Y. Yuan et al., Controlled synthesis of 2D palladium diselenide for sensitive photodetector applications. Adv. Funct. Mater. 29(1), 1806878 (2019). https://doi.org/10.1002/adfm.201806878
  63. L.S. Lu, G.H. Chen, H.Y. Cheng, C.P. Chuu, K.C. Lu et al., Layer-dependent and in-plane anisotropic properties of low-temperature synthesized few-layer PdSe2 single crystals. ACS Nano 14(4), 4963–4972 (2020). https://doi.org/10.1021/acsnano.0c01139
  64. G.D. Nguyen, A.D. Oyedele, A. Haglund, W. Ko, L. Liang et al., Atomically precise PdSe2 pentagonal nanoribbons. ACS Nano 14(2), 1951–1957 (2020). https://doi.org/10.1021/acsnano.9b08390
  65. L.H. Zeng, S.H. Lin, Z.J. Li, Z.X. Zhang, T.F. Zhang et al., Fast, self-driven, air-stable, and broadband photodetector based on vertically aligned PtSe2/GaAs heterojunction. Adv. Funct. Mater. 28(16), 1705970 (2018). https://doi.org/10.1002/adfm.201705970
  66. A.N. Hoffman, Y. Gu, J. Tokash, J. Woodward, K. Xiao et al., Layer-by-layer thinning of pdse2 flakes via plasma induced oxidation and sublimation. ACS Appl. Mater. Interfaces 12(6), 7345–7350 (2020). https://doi.org/10.1021/acsami.9b21287
  67. Q. Liang, Q. Zhang, J. Gou, T. Song, Arramel et al., Performance improvement by ozone treatment of 2D PdSe2. ACS Nano 14(5), 5668–5677 (2020). https://doi.org/10.1021/acsnano.0c00180
  68. A. Di. Bartolomeo, F. Urban, A. Pelella, A. Grillo, M. Passacantando et al., Electron irradiation of multilayer PdSe2 field effect transistors. Nanotechnology 31(37), 375204 (2020). https://doi.org/10.1088/1361-6528/ab9472
  69. A. Hassan, Y. Guo, Q. Wang, Performance of the pentagonal PdSe2 sheet as a channel material in contact with metal surfaces and graphene. ACS Appl. Electron. Mater. 2(8), 2535–2542 (2020). https://doi.org/10.1021/acsaelm.0c00438
  70. A. Di. Bartolomeo, A. Pelella, X. Liu, F. Miao, M. Passacantando et al., Pressure-tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors. Adv. Funct. Mater. 29(29), 1902483 (2019). https://doi.org/10.1002/adfm.201902483
  71. J. Gao, Y. Gao, Y. Han, J. Pang, C. Wang et al., Ultrasensitive label-free MiRNA sensing based on a flexible graphene field-effect transistor without functionalization. ACS Appl. Electron. Mater. 2(4), 1090–1098 (2020). https://doi.org/10.1021/acsaelm.0c00095
  72. A. Tankut, M. Karaman, I. Yildiz, S. Canli, R. Turan, Effect of Al vacuum annealing prior to a-Si deposition on aluminum-induced crystallization. Phys. Status Solidi A Appl. Mater. Sci. 212(12), 2702–2707 (2015). https://doi.org/10.1002/pssa.201532857
  73. T. Takenobu, T. Kanbara, N. Akima, T. Takahashi, M. Shiraishi et al., Control of carrier density by a solution method in carbon-nanotube devices. Adv. Mater. 17(20), 2430–2434 (2005). https://doi.org/10.1002/adma.200500759
  74. F. Giubileo, A. Grillo, L. Iemmo, G. Luongo, F. Urban et al., Environmental effects on transport properties of PdSe2 field effect transistors. Mater. Today Proc. 20(1), 50–53 (2020). https://doi.org/10.1016/j.matpr.2019.08.226
  75. G.T. Xia, Y.N. Huang, F.J. Li, L.C. Wang, J.B. Pang et al., A thermally flexible and multi-site tactile sensor for remote 3D dynamic sensing imaging. Front. Chem. Sci. Eng. 14(6), 1039–1051 (2020). https://doi.org/10.1007/s11705-019-1901-5
  76. D. Chen, Z. Liu, Y. Li, D. Sun, X. Liu et al., Unsymmetrical alveolate PMMA/MWCNT film as a piezoresistive E-skin with four-dimensional resolution and application for detecting motion direction and airflow rate. ACS Appl. Mater. Interfaces 12(27), 30896–30904 (2020). https://doi.org/10.1021/acsami.0c02640
  77. Y. Zhou, Y. Wang, K. Wang, L. Kang, F. Peng et al., Hybrid genetic algorithm method for efficient and robust evaluation of remaining useful life of supercapacitors. Appl. Energy 260(1), 114169 (2020). https://doi.org/10.1016/j.apenergy.2019.114169
  78. X. Shang, S. Li, K. Wang, X. Teng, X. Wang et al., MnSe2/Se composite nanobelts as an improved performance anode for lithium storage. Int. J. Electrochem. Sci. 14(1), 6000–6008 (2019). https://doi.org/10.20964/2019.07.37
  79. C. Bu, F. Li, K. Yin, J. Pang, L. Wang et al., Research progress and prospect of triboelectric nanogenerators as self-powered human body sensors. ACS Appl. Electron. Mater. 2(4), 863–878 (2020). https://doi.org/10.1021/acsaelm.0c00022
  80. S.C. Dhanabalan, J.S. Ponraj, H. Zhang, Q. Bao, Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials. Nanoscale 8(12), 6410–6434 (2016). https://doi.org/10.1039/c5nr09111j
  81. A. Di. Bartolomeo, A. Pelella, F. Urban, A. Grillo, L. Iemmo et al., Field emission in ultrathin PdSe2 back-gated transistors. Adv. Electron. Mater. 6(7), 2000094 (2020). https://doi.org/10.1002/aelm.202000094
  82. R. Zhuo, L. Zeng, H. Yuan, D. Wu, Y. Wang et al., In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity. Nano Res. 12(1), 183–189 (2018). https://doi.org/10.1007/s12274-018-2200-z
  83. M. Buscema, D.J. Groenendijk, S.I. Blanter, G.A. Steele, H.S. van der Zant et al., Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14(6), 3347–3352 (2014). https://doi.org/10.1021/nl5008085
  84. X. Wan, Y. Xu, H. Guo, K. Shehzad, A. Ali et al., A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon? NPJ 2D Mater. Appl. 1(1), 2397–7132 (2017). https://doi.org/10.1038/s41699-017-0008-4
  85. R. Zhuo, Y. Wang, D. Wu, Z. Lou, Z. Shi et al., High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction. J. Mater. Chem. C 6(2), 299–303 (2018). https://doi.org/10.1039/c7tc04754a
  86. E.P. Mukhokosi, S.B. Krupanidhi, K.K. Nanda, Band gap engineering of hexagonal SnSe2 nanostructured thin films for infra-red photodetection. Sci. Rep. 7(1), 15215 (2017). https://doi.org/10.1038/s41598-017-15519-x
  87. L.B. Luo, D. Wang, C. Xie, J.G. Hu, X.Y. Zhao et al., PdSe2 multilayer on germanium nanocones array with light trapping effect for sensitive infrared photodetector and image sensing application. Adv. Funct. Mater. 29(22), 1900849 (2019). https://doi.org/10.1002/adfm.201900849
  88. Y. Yang, S.C. Liu, X. Wang, Z. Li, Y. Zhang et al., Polarization-sensitive ultraviolet photodetection of anisotropic 2D GeS2. Adv. Funct. Mater. 29(16), 1900411 (2019). https://doi.org/10.1002/adfm.201900411
  89. F. Chu, M. Chen, Y. Wang, Y. Xie, B. Liu et al., A highly polarization sensitive antimonene photodetector with a broadband photoresponse and strong anisotropy. J. Mater. Chem. C 6(10), 2509–2514 (2018). https://doi.org/10.1039/c7tc05488b
  90. P.K. Venuthurumilli, P.D. Ye, X. Xu, Plasmonic Resonance enhanced polarization-sensitive photodetection by black phosphorus in near infrared. ACS Nano 12(5), 4861–4867 (2018). https://doi.org/10.1021/acsnano.8b01660
  91. Y. Yang, S.C. Liu, W. Yang, Z. Li, Y. Wang et al., Air-stable in-plane anisotropic GeSe2 for highly polarization-sensitive photodetection in short wave region. J. Am. Chem. Soc. 140(11), 4150–4156 (2018). https://doi.org/10.1021/jacs.8b01234
  92. J. Bullock, M. Amani, J. Cho, Y.-Z. Chen, G.H. Ahn et al., Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature. Nat. Photon. 12(10), 601–607 (2018). https://doi.org/10.1038/s41566-018-0239-8
  93. J. Du, M. Zhang, Z. Guo, J. Chen, X. Zhu et al., Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers. Sci. Rep. 7(1), 42357 (2017). https://doi.org/10.1038/srep42357
  94. Y.F. Ma, S.C. Zhang, S.J. Din, X.X. Liu, X. Yu et al., Passively Q-switched Nd:GdLaNbO4 laser based on 2D PdSe2 nanosheet. Opt. Laser Technol. 124(1), 105959 (2020). https://doi.org/10.1016/j.optlastec.2019.105959
  95. Y.F. Ma, Z.F. Peng, S.J. Ding, H.Y. Sun, F. Peng et al., Two-dimensional WS2 nanosheet based passively Q-switched Nd:GdLaNbO4 laser. Opt. Laser Technnol. 115(1), 104–108 (2019). https://doi.org/10.1016/j.optlastec.2019.02.015
  96. P.K. Cheng, C.Y. Tang, S. Ahmed, J. Qiao, L.H. Zeng et al., Utilization of group 10 2D TMDs-PdSe2 as a nonlinear optical material for obtaining switchable laser pulse generation modes. Nanotechnology 32(5), 055201 (2021). https://doi.org/10.1088/1361-6528/abc1a2
  97. J. Pang, A. Bachmatiuk, Y. Yin, B. Trzebicka, L. Zhao et al., Applications of phosphorene and black phosphorus in energy conversion and storage devices. Adv. Energy Mater. 8(8), 1702093 (2018). https://doi.org/10.1002/aenm.201702093
  98. J. Pang, R.G. Mendes, A. Bachmatiuk, L. Zhao, H.Q. Ta et al., Applications of 2D MXenes in energy conversion and storage systems. Chem. Soc. Rev. 48(1), 72–133 (2019). https://doi.org/10.1039/c8cs00324f
  99. K. Olszowska, J. Pang, P.S. Wrobel, L. Zhao, H.Q. Ta et al., Three-dimensional nanostructured graphene: synthesis and energy, environmental and biomedical applications. Synth. Met. 234(1), 53–85 (2017). https://doi.org/10.1016/j.synthmet.2017.10.014
  100. J. Zhou, H. Chen, X. Zhang, K. Chi, Y. Cai et al., Substrate dependence on (Sb4Se6)n ribbon orientations of antimony selenide thin films: morphology, carrier transport and photovoltaic performance. J. Alloys Compd. 862(1), 158703 (2021). https://doi.org/10.1016/j.jallcom.2021.158703
  101. F. Shu, M. Wang, J. Pang, P. Yu, A free-standing superhydrophobic film for highly efficient removal of water from turbine oil. Front. Chem. Sci. Eng. 13(2), 393–399 (2019). https://doi.org/10.1007/s11705-018-1754-3
  102. K. Wang, J. Pang, L. Li, S. Zhou, Y. Li et al., Synthesis of hydrophobic carbon nanotubes/reduced graphene oxide composite films by flash light irradiation. Front. Chem. Sci. Eng. 12(3), 376–382 (2018). https://doi.org/10.1007/s11705-018-1705-z
  103. Y. Yin, J. Pang, J. Wang, X. Lu, Q. Hao et al., Graphene-activated optoplasmonic nanomembrane cavities for photodegradation detection. ACS Appl. Mater. Interfaces 11(17), 15891–15897 (2019). https://doi.org/10.1021/acsami.9b00733
  104. F.-X. Liang, J.-Z. Wang, Z.-X. Zhang, Y.-Y. Wang, Y. Gao et al., Broadband, ultrafast, self-driven photodetector based on Cs-doped FAPbI3 perovskite thin film. Adv. Opt. Mater. 5(22), 1700654 (2017). https://doi.org/10.1002/adom.201700654
  105. M. Long, A. Gao, P. Wang, H. Xia, C. Ott et al., Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci. Adv. 3(6), e1700589 (2017). https://doi.org/10.1126/sciadv.1700589
  106. X. Yu, P. Yu, D. Wu, B. Singh, Q. Zeng et al., Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor. Nat. Commun. 9(1), 1545 (2018). https://doi.org/10.1038/s41467-018-03935-0
  107. A.L. Hsu, P.K. Herring, N.M. Gabor, S. Ha, Y.C. Shin et al., Graphene-based thermopile for thermal imaging applications. Nano Lett. 15(11), 7211–7216 (2015). https://doi.org/10.1021/acs.nanolett.5b01755
  108. J. Piotrowski, A. Rogalski, Uncooled long wavelength infrared photon detectors. Infrared Phys. Technol. 46(1–2), 115–131 (2004). https://doi.org/10.1016/j.infrared.2004.03.016
  109. Y. Cao, X. Zhu, H. Chen, X. Zhang, J. Zhouc et al., Towards high efficiency inverted Sb2Se3 thin film solar cells. Sol. Energy Mater. Sol. Cells 200(1), 109945 (2019). https://doi.org/10.1016/j.solmat.2019.109945
  110. Y. Cao, X. Zhu, J. Jiang, C. Liu, J. Zhou et al., Rotational design of charge carrier transport layers for optimal antimony trisulfide solar cells and its integration in tandem devices. Sol. Energy Mater. Sol. Cells 206(1), 110279 (2020). https://doi.org/10.1016/j.solmat.2019.110279
  111. J. Jiang, F. Meng, Q. Cheng, A. Wang, Y. Chen et al., Low lattice mismatch InSe–Se vertical van der Waals heterostructure for high-performance transistors via strong fermi-level depinning. Small Methods 4(8), 2000238 (2020). https://doi.org/10.1002/smtd.202000238
  112. J. Jiang, F. Meng, Q. Cheng, A. Wang, Y. Chen et al., Low lattice mismatch InSe–Se vertical van der Waals heterostructure for high-performance transistors via strong fermi-level depinning (Small Methods 8/2020). Small Methods 4(8), 2070032 (2020). https://doi.org/10.1002/smtd.202070032
  113. C.-C. Wu, D. Jariwala, V.K. Sangwan, T.J. Marks, M.C. Hersam et al., Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy. J. Phys. Chem. Lett. 4(15), 2508–2513 (2013). https://doi.org/10.1021/jz401199x
  114. F. Xue, L. Chen, J. Chen, J. Liu, L. Wang et al., p-Type MoS2 and n-type ZnO diode and its performance enhancement by the piezophototronic effect. Adv. Mater. 28(17), 3391–3398 (2016). https://doi.org/10.1002/adma.201506472
  115. D. Li, M. Chen, Z. Sun, P. Yu, Z. Liu et al., Two-dimensional non-volatile programmable p–n junctions. Nat. Nanotechnol. 12(9), 901–906 (2017). https://doi.org/10.1038/nnano.2017.104
  116. X. Zhang, J. Grajal, J.L. Vazquez-Roy, U. Radhakrishna, X. Wang et al., Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting. Nature 566(7744), 368–372 (2019). https://doi.org/10.1038/s41586-019-0892-1
  117. A.M. Afzal, G. Dastgeer, M.Z. Iqbal, P. Gautam, M.M. Faisal, High-performance p-BP/n-PdSe2 near-infrared photodiodes with a fast and gate-tunable photoresponse. ACS Appl. Mater. Interfaces 12(17), 19625–19634 (2020). https://doi.org/10.1021/acsami.9b22898
  118. J.A. Leñero-Bardallo, R. Carmona-Galán, A. Rodríguez-Vázquez, Applications of event-based image sensors—review and analysis. Int. J. Circ. Theor. Appl. 46(9), 1620–1630 (2018). https://doi.org/10.1002/cta.2546
  119. F.X. Liang, X.Y. Zhao, J.J. Jiang, J.G. Hu, W.Q. Xie et al., Light confinement effect induced highly sensitive, self-driven near-infrared photodetector and image sensor based on multilayer PdSe2 /pyramid Si heterojunction. Small 15(44), 1903831 (2019). https://doi.org/10.1002/smll.201903831
  120. I. Ibrahim, J. Kalbacova, V. Engemaier, J.B. Pang, R.D. Rodriguez et al., Confirming the dual role of etchants during the enrichment of semiconducting single wall carbon nanotubes by chemical vapor deposition. Chem. Mater. 27(17), 5964–5973 (2015). https://doi.org/10.1021/acs.chemmater.5b02037
  121. J. Pang, R.G. Mendes, P.S. Wrobel, M.D. Wlodarski, H.Q. Ta et al., Self-terminating confinement approach for large-area uniform monolayer graphene directly over Si/SiOx by chemical vapor deposition. ACS Nano 11(2), 1946–1956 (2017). https://doi.org/10.1021/acsnano.6b08069
  122. J. Pang, A. Bachmatiuk, I. Ibrahim, L. Fu, D. Placha et al., CVD growth of 1D and 2D sp2 carbon nanomaterials. J. Mater. Sci. 51(2), 640–667 (2015). https://doi.org/10.1007/s10853-015-9440-z
  123. A. Soni, L. Zhao, H.Q. Ta, Q. Shi, J. Pang et al., Facile graphitization of silicon nano-particles with ethanol based chemical vapor deposition. Nano-Struct. Nano-Objects 16(1), 38–44 (2018). https://doi.org/10.1016/j.nanoso.2018.04.001
  124. B. Sun, J. Pang, Q. Cheng, S. Zhang, C. Zhang et al., Synthesis of wafer-scale graphene with chemical vapor deposition for electronic device applications. Adv. Mater. Technol. 1, 2000744 (2021). https://doi.org/10.1002/admt.202000744
  125. G.S. Martynkova, F. Becerik, D. Placha, J. Pang, H. Akbulut et al., Effect of milling and annealing on carbon-silver system. J. Nanosci. Nanotechnol. 19(5), 2770–2774 (2019). https://doi.org/10.1166/jnn.2019.15869
  126. M.H. Rummeli, S. Gorantla, A. Bachmatiuk, J. Phieler, N. Geissler et al., On the role of vapor trapping for chemical vapor deposition (CVD) grown graphene over copper. Chem. Mater. 25(24), 4861–4866 (2013). https://doi.org/10.1021/cm401669k
  127. J.B. Pang, A. Bachmatiuk, L. Fu, C.L. Yan, M.Q. Zeng et al., Oxidation as a means to remove surface contaminants on Cu foil prior to graphene growth by chemical vapor deposition. J. Phys. Chem. C 119(23), 13363–13368 (2015). https://doi.org/10.1021/acs.jpcc.5b03911
  128. J.B. Pang, A. Bachmatiuk, L. Fu, R.G. Mendes, M. Libera et al., Direct synthesis of graphene from adsorbed organic solvent molecules over copper. RSC Adv. 5(75), 60884–60891 (2015). https://doi.org/10.1039/c5ra09405d
  129. N.M. Santhosh, G. Filipič, E. Kovacevic, A. Jagodar, J. Berndt et al., N-graphene nanowalls via plasma nitrogen incorporation and substitution: the experimental evidence. Nano-Micro Lett. 12(1), 53 (2020). https://doi.org/10.1007/s40820-020-0395-5
  130. R.G. Mendes, J. Pang, A. Bachmatiuk, H.Q. Ta, L. Zhao et al., Electron-driven in situ transmission electron microscopy of 2D transition metal dichalcogenides and their 2D heterostructures. ACS Nano 13(2), 978–995 (2019). https://doi.org/10.1021/acsnano.8b08079
  131. D. Zhang, T. Liu, J. Cheng, Q. Cao, G. Zheng et al., Lightweight and high-performance microwave absorber based on 2D WS2–RGO heterostructures. Nano-Micro Lett. 11(1), 38 (2019). https://doi.org/10.1007/s40820-019-0270-4
  132. K. Persson, Materials Data on PdSe2 (SG:61) by Materials Project. https://doi.org/10.17188/1199960
  133. L.-Y. Feng, R.A.B. Villaos, Z.-Q. Huang, C.-H. Hsu, F.-C. Chuang, Layer-dependent band engineering of Pd dichalcogenides: a first-principles study. New J. Phys. 22(5), 053010 (2020). https://doi.org/10.1088/1367-2630/ab7d7a
  134. K. Persson, Materials Data on PdS2 (SG:61) by Materials Project. https://doi.org/10.17188/1189716
  135. K. Persson. Materials Data on Te2Pd (SG:164) by Materials Project. https://doi.org/10.17188/1307608
  136. G. Anemone, P. Casado Aguilar, M. Garnica, F. Calleja, A. Al Taleb et al., Electron–phonon coupling in superconducting 1T-PdTe2. NPJ 2D Mater. Appl. 5(1), 25 (2021). https://doi.org/10.1038/s41699-021-00204-5
  137. R.N. Madhu, Singh, Palladium selenides as active methanol tolerant cathode materials for direct methanol fuel cell. Int. J. Hydrogen Energy 36(16), 10006–10012 (2011). https://doi.org/10.1016/j.ijhydene.2011.05.069
  138. D. Qin, P. Yan, G. Ding, X. Ge, H. Song et al., Monolayer PdSe2: a promising two-dimensional thermoelectric material. Sci. Rep. 8(1), 2764 (2018). https://doi.org/10.1038/s41598-018-20918-9
  139. G. Zhang, M. Amani, A. Chaturvedi, C. Tan, J. Bullock et al., Optical and electrical properties of two-dimensional palladium diselenide. Appl. Phys. Lett. 114(25), 253102 (2019). https://doi.org/10.1063/1.5097825
  140. A.N. Hoffman, Y. Gu, L. Liang, J.D. Fowlkes, K. Xiao et al., Exploring the air stability of PdSe2 via electrical transport measurements and defect calculations. NPJ 2D Mater. Appl. 3(1), 50 (2019). https://doi.org/10.1038/s41699-019-0132-4
  141. H. Fang, W. Hu, Photogating in low dimensional photodetectors. Adv. Sci. 4(12), 1700323 (2017). https://doi.org/10.1002/advs.201700323
  142. P. Miro, M. Ghorbani-Asl, T. Heine, Two dimensional materials beyond MoS2: noble-transition-metal dichalcogenides. Angew. Chem. Int. Ed. 53(11), 3015–3018 (2014). https://doi.org/10.1002/anie.201309280
  143. L. Li, W. Wang, Y. Chai, H. Li, M. Tian et al., Few-layered PtS2 phototransistor on h-BN with high gain. Adv. Funct. Mater. 27(27), 1701011 (2017). https://doi.org/10.1002/adfm.201701011
  144. H. Xu, H.P. Huang, H. Fei, J. Feng, H.R. Fuh et al., Strategy for fabricating wafer-scale platinum disulfide. ACS Appl. Mater. Interfaces 11(8), 8202–8209 (2019). https://doi.org/10.1021/acsami.8b19218
  145. E. Zhang, Y. Jin, X. Yuan, W. Wang, C. Zhang et al., ReS2-based field-effect transistors and photodetectors. Adv. Funct. Mater. 25(26), 4076–4082 (2015). https://doi.org/10.1002/adfm.201500969
  146. J. Shim, A. Oh, D.H. Kang, S. Oh, S.K. Jang et al., High-performance 2D rhenium disulfide (ReS2) transistors and photodetectors by oxygen plasma treatment. Adv. Mater. 28(32), 6985–6992 (2016). https://doi.org/10.1002/adma.201601002
  147. E. Zhang, P. Wang, Z. Li, H. Wang, C. Song et al., Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano 10(8), 8067–8077 (2016). https://doi.org/10.1021/acsnano.6b04165
  148. M. Hafeez, L. Gan, H. Li, Y. Ma, T. Zhai, Chemical vapor deposition synthesis of ultrathin hexagonal ReSe2 flakes for anisotropic raman property and optoelectronic application. Adv. Mater. 28(37), 8296–8301 (2016). https://doi.org/10.1002/adma.201601977
  149. W. Feng, J.-B. Wu, X. Li, W. Zheng, X. Zhou et al., Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. J. Mater. Chem. C 3(27), 7022–7028 (2015). https://doi.org/10.1039/c5tc01208b
  150. M. Dai, H. Chen, R. Feng, W. Feng, Y. Hu et al., A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction. ACS Nano 12(8), 8739–8747 (2018). https://doi.org/10.1021/acsnano.8b04931
  151. J. Ye, S. Soeda, Y. Nakamura, O. Nittono, Crystal structures and phase transformation in In2Se3 compound semiconductor. Jpn. J. Appl. Phys. 37, 4264–4271 (1998). https://doi.org/10.1143/jjap.37.4264
  152. W. Feng, F. Gao, Y. Hu, M. Dai, H. Liu et al., Phase-engineering-driven enhanced electronic and optoelectronic performance of multilayer In2Se3 nanosheets. ACS Appl. Mater. Interfaces 10(33), 27584–27588 (2018). https://doi.org/10.1021/acsami.8b10194
  153. R.B. Jacobs-Gedrim, M. Shanmugam, N. Jain, C.A. Durcan, M.T. Murphy et al., Extraordinary photoresponse in two-dimensional In(2)Se(3) nanosheets. ACS Nano 8(1), 514–521 (2014). https://doi.org/10.1021/nn405037s
  154. M. Amani, E. Regan, J. Bullock, G.H. Ahn, A. Javey, Mid-wave infrared photoconductors based on black phosphorus-arsenic alloys. ACS Nano 11(11), 11724–11731 (2017). https://doi.org/10.1021/acsnano.7b07028
  155. D. Zheng, H. Fang, M. Long, F. Wu, P. Wang et al., High-performance near-infrared photodetectors based on p-type SnX (X = S, Se) nanowires grown via chemical vapor deposition. ACS Nano 12(7), 7239–7245 (2018). https://doi.org/10.1021/acsnano.8b03291
  156. G. Su, V.G. Hadjiev, P.E. Loya, J. Zhang, S. Lei et al., Chemical vapor deposition of thin crystals of layered semiconductor SnS2 for fast photodetection application. Nano Lett. 15(1), 506–513 (2015). https://doi.org/10.1021/nl503857r
  157. F. Xia, T. Mueller, Y.M. Lin, A. Valdes-Garcia, P. Avouris, Ultrafast graphene photodetector. Nat. Nanotechnol. 4(12), 839–843 (2009). https://doi.org/10.1038/nnano.2009.292
  158. B.J. Kim, H. Jang, S.K. Lee, B.H. Hong, J.H. Ahn et al., High-performance flexible graphene field effect transistors with ion gel gate dielectrics. Nano Lett. 10(9), 3464–3466 (2010). https://doi.org/10.1021/nl101559n
  159. E.O. Polat, G. Mercier, I. Nikitskiy, E. Puma, T. Galan et al., Flexible graphene photodetectors for wearable fitness monitoring. Sci. Adv. 5(9), eaaw7846 (2019). https://doi.org/10.1126/sciadv.aaw7846
  160. X. Yu, Z. Dong, Y. Liu, T. Liu, J. Tao et al., A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2. Nanoscale 8(1), 327–332 (2016). https://doi.org/10.1039/c5nr06869j
  161. L. Zeng, L. Tao, C. Tang, B. Zhou, H. Long et al., High-responsivity UV-Vis photodetector based on transferable WS2 film deposited by magnetron sputtering. Sci. Rep. 6(1), 20343 (2016). https://doi.org/10.1038/srep20343
  162. J. Jiang, Q. Zhang, A. Wang, Y. Zhang, F. Meng, C. Zhang, X. Feng, Y. Feng, L. Gu, H. Liu, L. Han, A facile and effective method for patching sulfur vacancies of WS2 via nitrogen plasma treatment. Small 15(36), 1901791 (2019). https://doi.org/10.1002/smll.201901791
  163. Q. Wang, Q. Zhang, X. Zhao, Y.J. Zheng, J. Wang et al., High-energy gain upconversion in monolayer tungsten disulfide photodetectors. Nano Lett. 19(8), 5595–5603 (2019). https://doi.org/10.1021/acs.nanolett.9b02136
  164. W. Zhang, M.H. Chiu, C.H. Chen, W. Chen, L.J. Li et al., Role of metal contacts in high-performance phototransistors based on WSe2 monolayers. ACS Nano 8(8), 8653–8661 (2014). https://doi.org/10.1021/nn503521c
  165. H. Zhou, C. Wang, J.C. Shaw, R. Cheng, Y. Chen et al., Large area growth and electrical properties of p-type WSe2 atomic layers. Nano Lett. 15(1), 709–713 (2015). https://doi.org/10.1021/nl504256y
  166. J. Chen, Q. Wang, Y. Sheng, G. Cao, P. Yang et al., High-performance WSe2 photodetector based on a laser-induced p–n junction. ACS Appl. Mater. Interfaces 11(46), 43330–43336 (2019). https://doi.org/10.1021/acsami.9b13948
  167. H.S. Lee, S.W. Min, Y.G. Chang, M.K. Park, T. Nam et al., MoS(2) nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12(7), 3695–3700 (2012). https://doi.org/10.1021/nl301485q
  168. Y.H. Zhou, H.N. An, C. Gao, Z.Q. Zheng, B. Wang, UV–Vis-NIR photodetector based on monolayer MoS2. Mater. Lett. 237(1), 298–302 (2019). https://doi.org/10.1016/j.matlet.2018.11.112
  169. W. Wang, A. Klots, D. Prasai, Y. Yang, K.I. Bolotin et al., Hot electron-based near-infrared photodetection using bilayer MoS2. Nano Lett. 15(11), 7440–7444 (2015). https://doi.org/10.1021/acs.nanolett.5b02866
  170. C. Jung, S.M. Kim, H. Moon, G. Han, J. Kwon et al., Highly crystalline CVD-grown multilayer MoSe2 thin film transistor for fast photodetector. Sci. Rep. 5(1), 15313 (2015). https://doi.org/10.1038/srep15313
  171. R. Coehoorn, C. Haas, R.A. de Groot, Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps. Phys. Rev. B 35(12), 6203–6206 (1987). https://doi.org/10.1103/physrevb.35.6203
  172. P.J. Ko, A. Abderrahmane, N.H. Kim, A. Sandhu, High-performance near-infrared photodetector based on nano-layered MoSe2. Semicond. Sci. Technol. 32(6), 065015 (2017). https://doi.org/10.1088/1361-6641/aa6819
  173. V. Tran, R. Soklaski, Y. Liang, L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89(23), 235319 (2014). https://doi.org/10.1103/PhysRevB.89.235319
  174. Q. Guo, A. Pospischil, M. Bhuiyan, H. Jiang, H. Tian et al., Black phosphorus mid-infrared photodetectors with high gain. Nano Lett. 16(7), 4648–4655 (2016). https://doi.org/10.1021/acs.nanolett.6b01977
  175. J. Qiao, X. Kong, Z.X. Hu, F. Yang, W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5(1), 4475 (2014). https://doi.org/10.1038/ncomms5475
  176. J. Wang, A. Rousseau, E. Eizner, A.-L. Phaneuf-L’Heureux, L. Schue et al., Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors. ACS Photon. 6(12), 3092–3099 (2019). https://doi.org/10.1021/acsphotonics.9b00951
  177. X. Zhou, X. Hu, B. Jin, J. Yu, K. Liu et al., Highly anisotropic GeSe nanosheets for phototransistors with ultrahigh photoresponsivity. Adv. Sci. 5(8), 1800478 (2018). https://doi.org/10.1002/advs.201800478
  178. C. Jia, D. Wu, E.P. Wu, J.W. Guo, Z.H. Zhao et al., A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity. J. Mater. Chem. C. 7(13), 3817–3821 (2019). https://doi.org/10.1039/c8tc06398b
  179. R. Chai, Y. Chen, M. Zhong, H. Yang, F. Yan et al., Non-layered ZnSb nanoplates for room temperature infrared polarized photodetectors. J. Mater. Chem. C 8(19), 6388–6395 (2020). https://doi.org/10.1039/d0tc00755b
  180. S. Deng, M.L. Tao, J. Mei, M. Li, Y. Zhang et al., Optical and piezoelectric properties of strained orthorhombic PdS2. IEEE Trans. Nanotechnol. 18(1), 358–364 (2019). https://doi.org/10.1109/Tnano.2019.2908221
  181. Y. Deng, Z. Luo, N.J. Conrad, H. Liu, Y. Gong et al., Black phosphorus-monolayer MoS2 van der Waals heterojunction p–n diode. ACS Nano 8(8), 8292–8299 (2014). https://doi.org/10.1021/nn5027388
  182. F. Yan, L. Zhao, A. Patane, P. Hu, X. Wei et al., Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology 28(27), 27LT01 (2017). https://doi.org/10.1088/1361-6528/aa749e
  183. X. Chen, H. Chen, Z. Wang, Y. Shan, D.W. Zhang et al., Analysis of the relationship between the contact barrier and rectification ratio in a two-dimensional P–N heterojunction. Semicond. Sci. Technol. 33(11), 114012 (2018). https://doi.org/10.1088/1361-6641/aae3aa
  184. K. Murali, M. Dandu, S. Das, K. Majumdar, Gate-tunable WSe2/SnSe2 backward diode with ultrahigh-reverse rectification ratio. ACS Appl. Mater. Interfaces 10(6), 5657–5664 (2018). https://doi.org/10.1021/acsami.7b18242
  185. M.A. Khan, S. Rathi, D. Lim, S.J. Yun, D.-H. Youn et al., Gate tunable self-biased diode based on few layered MoS2 and WSe2. Chem. Mater. 30(3), 1011–1016 (2018). https://doi.org/10.1021/acs.chemmater.7b04865
  186. Z. Yang, L. Liao, F. Gong, F. Wang, Z. Wang et al., WSe2/GeSe heterojunction photodiode with giant gate tunability. Nano Energy 49(1), 103–108 (2018). https://doi.org/10.1016/j.nanoen.2018.04.034
  187. C. Lan, C. Li, S. Wang, T. He, T. Jiao et al., Zener tunneling and photoresponse of a WS2/Si van der Waals heterojunction. ACS Appl. Mater. Interfaces 8(28), 18375–18382 (2016). https://doi.org/10.1021/acsami.6b05109
  188. J. Chu, F. Wang, L. Yin, L. Lei, C. Yan et al., High-performance ultraviolet photodetector based on a few-layered 2D NiPS3 nanosheet. Adv. Funct. Mater. 27(32), 1701342 (2017). https://doi.org/10.1002/adfm.201701342
  189. L. Ye, H. Li, Z. Chen, J. Xu, Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photon. 3(4), 692–699 (2016). https://doi.org/10.1021/acsphotonics.6b00079
  190. Y. Zhang, Y. Yu, L. Mi, H. Wang, Z. Zhu et al., In situ fabrication of vertical multilayered MoS2/Si homotype heterojunction for high-speed visible-near-infrared photodetectors. Small 12(8), 1062–1071 (2016). https://doi.org/10.1002/smll.201502923
  191. Q. Liu, B. Cook, M. Gong, Y. Gong, D. Ewing et al., Printable transfer-free and wafer-size MoS2/graphene van der Waals heterostructures for high-performance photodetection. ACS Appl. Mater. Interfaces 9(14), 12728–12733 (2017). https://doi.org/10.1021/acsami.7b00912
  192. A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N.D. Sharma et al., Fabrication of non-polar GaN based highly responsive and fast UV photodetector. Appl. Phys. Lett. 110(10), 103507 (2017). https://doi.org/10.1063/1.4978427
  193. P. Wang, S. Liu, W. Luo, H. Fang, F. Gong et al., Arrayed van der Waals broadband detectors for dual-band detection. Adv. Mater. 29(16), 1521–4095 (2017). https://doi.org/10.1002/adma.201604439
  194. D.S. Um, Y. Lee, S. Lim, J. Park, W.C. Yen et al., InGaAs nanomembrane/si van der waals heterojunction photodiodes with broadband and high photoresponsivity. ACS Appl. Mater. Interfaces 8(39), 26105–26111 (2016). https://doi.org/10.1021/acsami.6b06580
  195. W. Zheng, R. Lin, Y. Zhu, Z. Zhang, X. Ji et al., Vacuum ultraviolet photodetection in two-dimensional oxides. ACS Appl. Mater. Interfaces 10(24), 20696–20702 (2018). https://doi.org/10.1021/acsami.8b04866
  196. L.H. Zeng, M.Z. Wang, H. Hu, B. Nie, Y.Q. Yu et al., Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector. ACS Appl. Mater. Interfaces 5(19), 9362–9366 (2013). https://doi.org/10.1021/am4026505
  197. X. Li, M. Zhu, M. Du, Z. Lv, L. Zhang et al., High detectivity graphene-silicon heterojunction photodetector. Small 12(5), 595–601 (2016). https://doi.org/10.1002/smll.201502336
  198. K. Zhang, X. Fang, Y. Wang, Y. Wan, Q. Song et al., Ultrasensitive near-infrared photodetectors based on a graphene-MoTe2-graphene vertical van der Waals heterostructure. ACS Appl. Mater. Interfaces 9(6), 5392–5398 (2017). https://doi.org/10.1021/acsami.6b14483
  199. Y.-S. Lan, X.-R. Chen, C.-E. Hu, Y. Cheng, Q.-F. Chen, Penta-PdX2 (X = S, Se, Te) monolayers: promising anisotropic thermoelectric materials. J. Mater. Chem. A 7(18), 11134–11142 (2019). https://doi.org/10.1039/c9ta02138h
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