Issue

Vol. 18 (2026)

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution

https://doi.org/10.1007/s40820-025-01898-8
Jung Hun Lee
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
Jae Young Kim
Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77845, USA
Hyeon‑Ji Lee
Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Sung‑Jin Choi
School of Electrical Engineering, Kookmin University, Seoul 02707, South Korea
Yoon Jung Lee
Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
Ho Won Jang
Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

Corresponding Author: Ho Won Jang

hwjang@snu.ac.kr

Nano-Micro Letters, Vol. 18 (2026), Article Number: 69

Abstract

As silicon-based transistors face fundamental scaling limits, the search for breakthrough alternatives has led to innovations in 3D architectures, heterogeneous integration, and sub-3 nm semiconductor body thicknesses. However, the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors. In this review, we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials. Among the most promising candidates are 2D van der Waals semiconductors, Mott insulators, and amorphous oxide semiconductors, which offer not only unique electrical properties but also low-power operation and high carrier mobility. Additionally, we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics, including high-K materials, ferroelectrics, and atomically thin hexagonal boron nitride layers. Beyond introducing these novel material configurations, we address critical challenges such as leakage current and long-term device reliability, which become increasingly crucial as transistors scale down to atomic dimensions. Through concrete examples showcasing the potential of these materials in transistors, we provide key insights into overcoming fundamental obstacles—such as device reliability, scaling down limitations, and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.


Highlights:
1 This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance.
2 These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation.
3 The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.

Keywords

Modern transistors Transistor scaling Alternative semiconductors 3D integration Device reliability
Lee, Jung Hun, Jae Young Kim, Hyeon‑Ji Lee, Sung‑Jin Choi, Yoon Jung Lee, and Ho Won Jang. 2025. “Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution”. Nano-Micro Letters 18 (September):69. https://doi.org/10.1007/s40820-025-01898-8.
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