Issue

Vol. 15 (2023)

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

https://doi.org/10.1007/s40820-022-01010-4
Zimeng Ye
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, People’s Republic of China
Chao Tan
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, People’s Republic of China
Xiaolei Huang
State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, People’s Republic of China
Yi Ouyang
Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
Lei Yang
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, People’s Republic of China
Zegao Wang
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, People’s Republic of China
Mingdong Dong
Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

Corresponding Author: Mingdong Dong

dong@inano.au.dk

Nano-Micro Letters, Vol. 15 (2023), Article Number: 38

Abstract

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal–organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.


Highlights:


1 This review summarized the state of the art of MoS2 from their controllable growth and potential application in integrated circuit.
2 The influence of promoter, substrate, pressure, catalyst and precursor on the nucleation and growth are discussed.
3 The current challenges and future perspectives of wafer-scale MoS2 are outlined from the materials and device applications.

Keywords

Wafer-scale growth Molybdenum disulfide Gas deposition Integrated circuits
Ye, Zimeng, Chao Tan, Xiaolei Huang, Yi Ouyang, Lei Yang, Zegao Wang, and Mingdong Dong. 2023. “Emerging MoS2 Wafer-Scale Technique for Integrated Circuits”. Nano-Micro Letters 15 (January):38. https://doi.org/10.1007/s40820-022-01010-4.
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