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Vol. 12 (2020)

Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

https://doi.org/10.1007/s40820-019-0361-2
Hao Xu
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
Juntong Zhu
School of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, People’s Republic of China
Guifu Zou
School of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, People’s Republic of China
Wei Liu
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
Xiao Li
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
Caihong Li
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Gyeong Hee Ryu
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Wenshuo Xu
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Xiaoyu Han
Department of Chemistry, University College London, 20 Gordon St, Bloomsbury, London WC1H 0AJ, UK
Zhengxiao Guo
Department of Chemistry, University College London, 20 Gordon St, Bloomsbury, London WC1H 0AJ, UK
Jamie H. Warner
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Jiang Wu
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
Huiyun Liu
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK

Corresponding Author: Jiang Wu

jiangwu@uestc.edu.cn

Nano-Micro Letters, Vol. 12 (2020), Article Number: 26

Abstract

Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.


Highlights:


1 Due to the Se composition and thickness gradient within single MoS2(1−x)Se2x domains, the bandgap of MoS2(1−x)Se2x is gradually tuned from 1.83 to 1.73 eV.
2 The homojunction phototransistors at zero bias deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104.
3 The biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, and a photoconductive gain of 106–107.

Keywords

Transition metal dichalcogenides Graded bandgaps Homojunctions Phototransistors Self-powered
Xu, Hao, Juntong Zhu, Guifu Zou, Wei Liu, Xiao Li, Caihong Li, Gyeong Hee Ryu, Wenshuo Xu, Xiaoyu Han, Zhengxiao Guo, Jamie H. Warner, Jiang Wu, and Huiyun Liu. 2020. “Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors”. Nano-Micro Letters 12 (January):26. https://doi.org/10.1007/s40820-019-0361-2.
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References
  1. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011). https://doi.org/10.1038/nnano.2010.279
  2. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 8, 497–501 (2013). https://doi.org/10.1038/nnano.2013.100
  3. B.W.H. Baugher, H.O.H. Churchill, Y. Yang, P. Jarillo-Herrero, Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat. Nanotechnol. 9, 262–267 (2014). https://doi.org/10.1038/nnano.2014.25
  4. Y. Ye, Z.J. Wong, X. Lu, X. Ni, H. Zhu et al., Monolayer excitonic laser. Nat. Photonics 9, 733–737 (2015). https://doi.org/10.1038/nphoton.2015.197
  5. H.J. Chuang, B. Chamlagain, M. Koehler, M.M. Perera, J. Yan et al., Low-resistance 2D/2D ohmic contacts: a universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. Nano Lett. 16, 1896–1902 (2016). https://doi.org/10.1021/acs.nanolett.5b05066
  6. V.K. Sangwan, H.S. Lee, H. Bergeron, I. Balla, M.E. Beck et al., Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide. Nature 554, 500–504 (2018). https://doi.org/10.1038/nature25747
  7. H. Xu, X. Han, X. Dai, W. Liu, J. Wu et al., High detectivity and transparent few-layer MoS2/glassy-graphene heterostructure photodetectors. Adv. Mater. 30, 1706561 (2018). https://doi.org/10.1002/adma.201706561
  8. J. Chen, Q. Ma, X.J. Wu, L. Li, J. Liu et al., Wet-chemical synthesis and applications of semiconductor nanomaterial-based epitaxial heterostructures. Nano-Micro Lett. 11, 86 (2019). https://doi.org/10.1007/s40820-019-0317-6
  9. Y. Zhang, T.R. Chang, B. Zhou, Y.T. Cui, H. Yan et al., Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat. Nanotechnol. 9, 111–115 (2014). https://doi.org/10.1038/nnano.2013.277
  10. G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen et al., Photoluminescence from chemically exfoliated MoS2. Nano Lett. 11, 5111–5116 (2011). https://doi.org/10.1021/nl201874w
  11. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim et al., Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010). https://doi.org/10.1021/nl903868w
  12. Z. Zhang, P. Chen, X. Duan, K. Zang, J. Luo et al., Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices. Science 357, 788–792 (2017). https://doi.org/10.1126/science.aan6814
  13. X. Hong, J. Kim, S.-F. Shi, Y. Zhang, C. Jin et al., Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9, 682–686 (2014). https://doi.org/10.1038/nnano.2014.167
  14. Y. Chen, X. Wang, G. Wu, Z. Wang, H. Fang et al., High-performance photovoltaic detector based on MoTe2/MoS2 van der waals heterostructure. Small 14, 1703293 (2018). https://doi.org/10.1002/smll.201703293
  15. N. Huo, J. Kang, Z. Wei, S.S. Li, J. Li et al., Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors. Adv. Funct. Mater. 24, 7025–7031 (2014). https://doi.org/10.1002/adfm.201401504
  16. M.Y. Li, Y. Shi, C.C. Cheng, L.S. Lu, Y.C. Lin et al., Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349, 524–528 (2015). https://doi.org/10.1126/science.aab4097
  17. X.X.W. Zhang, X. Li, T. Jiang, J. Song, Y. Lin et al., CVD synthesis of Mo(1−x)WxS2 and MoS2(1−x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenumdisulfid. Nanoscale 7, 13554–13560 (2015). https://doi.org/10.1039/c5nr02515j
  18. X. Duan, C. Wang, Z. Fan, G. Hao, L. Kou et al., Synthesis of WS2xSe2−2x alloy nanosheets with composition-tunable electronic properties. Nano Lett. 16, 264–269 (2016). https://doi.org/10.1021/acs.nanolett.5b03662
  19. L. Yang, Q. Fu, W. Wang, J. Huang, J. Huang et al., Large-area synthesis of monolayered MoS2(1−x)Se2x with a tunable band gap and its enhanced electrochemical catalytic activity. Nanoscale 7, 10490–10497 (2015). https://doi.org/10.1039/c5nr02652k
  20. Y. Gong, Z. Liu, A.R. Lupini, G. Shi, J. Lin et al., Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 14, 442–449 (2014). https://doi.org/10.1021/nl4032296
  21. J. Kang, S. Tongay, J. Zhou, J. Li, J. Wu, Band offsets and heterostructures of two-dimensional semiconductors. Appl. Phys. Lett. 102, 012111 (2013). https://doi.org/10.1063/1.4774090
  22. J. Kang, J. Li, S.S. Li, J.B. Xia, L.W. Wang, Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures. Nano Lett. 13, 5485–5490 (2013). https://doi.org/10.1021/nl4030648
  23. C. Feng, Y. Zhang, Y. Qian, B. Chang, F. Shi et al., Photoemission from advanced heterostructured AlxGa1−xAs/GaAs photocathodes under multilevel built-in electric field. Opt. Express 23, 19478 (2015). https://doi.org/10.1364/OE.23.019478
  24. K. Woo, Y. Kim, W. Yang, K. Kim, I. Kim et al., Band-gap-graded Cu2 ZnSn(S1−x, Sex)4 solar cells fabricated by an ethanol-based, particulate precursor ink route. Sci. Rep. 3, 3069 (2013). https://doi.org/10.1038/srep03069
  25. R.E. Bailey, S. Nie, Alloyed semiconductor quantum dots: tuning the optical properties without changing the particle size. J. Am. Chem. Soc. 125, 7100–7106 (2003). https://doi.org/10.1021/ja035000o
  26. R. Zhou, L. Wan, H. Niu, L. Yang, X. Mao et al., Tailoring band structure of ternary CdSx Se1−x quantum dots for highly efficient sensitized solar cells. Sol. Energy Mater. Sol. Cells 155, 20–29 (2016). https://doi.org/10.1016/j.solmat.2016.04.049
  27. A. Pan, W. Zhou, E.S.P. Leong, R. Liu, A.H. Chin et al., Continuous alloy-composition spatial grading and superbroad wavelength-tunable nanowire lasers on a single chip. Nano Lett. 9, 784–788 (2009). https://doi.org/10.1021/n1803456k
  28. L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando et al., Bandgap-graded CdSxSe1−x nanowires for high-performance field-effect transistors and solar cells. Adv. Mater. 25, 1109–1113 (2013). https://doi.org/10.1002/adma.201204434
  29. X. Zhuang, C.Z. Ning, A. Pan, Composition and bandgap-graded semiconductor alloy nanowires. Adv. Mater. 24, 13–33 (2012). https://doi.org/10.1002/adma.201103191
  30. H. Li, Q. Zhang, X. Duan, X. Wu, X. Fan et al., Lateral growth of composition graded atomic layer MoS2(1−x)Se2x nanosheets. J. Am. Chem. Soc. 137, 5284–5287 (2015). https://doi.org/10.1021/jacs.5b01594
  31. S. Zheng, L. Sun, T. Yin, A.M. Dubrovkin, F. Liu et al., Monolayers of WxMo1−xS2 alloy heterostructure with in-plane composition variations. Appl. Phys. Lett. 106, 63113 (2015). https://doi.org/10.1063/1.4908256
  32. G. Kresse, D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758 (1999). https://doi.org/10.1103/PhysRevB.59.1758
  33. G. Kresse, J. Furthmüller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996). https://doi.org/10.1016/0927-0256(96)00008-0
  34. S. Grimme, Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787–1799 (2006). https://doi.org/10.1002/jcc.20495
  35. S. Steiner, S. Khmelevskyi, M. Marsmann, G. Kresse, Calculation of the magnetic anisotropy with projected-augmented-wavemethodology and the case study of disordered Fe1−xCox alloys. Phys. Rev. B 93, 224425 (2016). https://doi.org/10.1103/PhysRevB.93.224425
  36. J. Zhu, H. Xu, G. Zou, W. Zhang, R. Chai et al., MoS2 -OH bilayer-mediated growth of inch-sized monolayer MoS2 on arbitrary substrates. J. Am. Chem. Soc. 141, 5392–5401 (2019). https://doi.org/10.1021/jacs.9b00047
  37. G.W. Shim, K. Yoo, S.B. Seo, J. Shin, D.Y. Jung et al., Large-area single-layer MoSe2 and its van der Waals heterostructures. ACS Nano 8, 6655–6662 (2014). https://doi.org/10.1021/nn405685j
  38. X. Wang, Y. Gong, G. Shi, W.L. Chow, K. Keyshar et al., Chemical vapor deposition growth of crystalline monolayer MoSe2. ACS Nano 8, 5125–5131 (2014). https://doi.org/10.1021/nn501175k
  39. H. Li, Q. Zhang, C.C.R. Yap, B.K. Tay, T.H.T. Edwin et al., From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385–1390 (2012). https://doi.org/10.1002/adfm.201102111
  40. C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone et al., Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 4, 2695–2700 (2010). https://doi.org/10.1021/nn1003937
  41. R. Saito, Y. Tatsumi, S. Huang, X. Ling, M.S. Dresselhaus, Raman spectroscopy of transition metal dichalcogenides. J. Phys.: Condens. Matter 28, 353002 (2016). https://doi.org/10.1088/0953-8984/28/35/353002
  42. N.A. Lanzillo, A.G. Birdwell, M. Amani, F.J. Crowne, P.B. Shah et al., Temperature-dependent phonon shifts in monolayer MoS2. Appl. Phys. Lett. 103, 093102 (2013). https://doi.org/10.1063/1.4819337
  43. P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner et al., Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 21, 4908 (2013). https://doi.org/10.1364/OE.21.004908
  44. Q. Gong, L. Cheng, C. Liu, M. Zhang, Q. Feng et al., Ultrathin MoS2(1−x)Se2x alloy nanoflakes for electrocatalytic hydrogen evolution reaction. ACS Catal. 5, 2213–2219 (2015). https://doi.org/10.1021/cs501970w
  45. M. O’Brien, N. McEvoy, D. Hanlon, T. Hallam, J.N. Coleman et al., Mapping of low-frequency raman modes in CVD-grown transition metal dichalcogenides: layer number, stacking orientation and resonant effects. Sci. Rep. 6, 19476 (2016). https://doi.org/10.1038/srep19476
  46. W. Hsu, L. Lu, D. Wang, J. Huang, M. Li et al., Evidence of indirect gap in monolayer WSe2. Nat. Commun. 13, 929 (2017). https://doi.org/10.1038/s41467-017-01012-6
  47. D. Jariwala, V.K. Sangwan, C.-C. Wu, P.L. Prabhumirashi, M.L. Geier et al., Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. Proc. Natl. Acad. Sci. 110, 18076–18080 (2013). https://doi.org/10.1073/pnas.1317226110
  48. H.C. Cheng, G. Wang, D. Li, Q. He, A. Yin et al., Van der waals heterojunction devices based on organohalide perovskites and two-dimensional materials. Nano Lett. 16, 367–373 (2016). https://doi.org/10.1021/acs.nanolett.5b03944
  49. Y. Yang, N. Huo, J. Li, Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses. J. Mater. Chem. C 5, 7051–7056 (2017). https://doi.org/10.1039/c7tc01806a
  50. Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi et al., Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17 As as a function of temperature and doping density. J. Mater. Chem. C 3, 2872–2880 (2015). https://doi.org/10.1039/c4tc02709d
  51. C. Xie, C. Mak, X. Tao, F. Yan, Photodetectors based on two-dimensional layered materials beyond graphene. Adv. Funct. Mater. 27, 1603886 (2017). https://doi.org/10.1002/adfm.201603886
  52. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi et al., Single-layer MoS2 phototransistors. ACS Nano 6, 74–80 (2012). https://doi.org/10.1021/nn2024557
  53. W. Choi, M.Y. Cho, A. Konar, J.H. Lee, G.B. Cha et al., High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared. Adv. Mater. 24, 5832–5836 (2012). https://doi.org/10.1002/adma.201201909
  54. Y. Lee, J. Yang, D. Lee, Y.H. Kim, J.H. Park et al., Trap-induced photoresponse of solution-synthesized MoS2. Nanoscale 8, 9193–9200 (2016). https://doi.org/10.1039/c6nr00654j
  55. C. Jung, S.M. Kim, H. Moon, G. Han, J. Kwon et al., Highly crystalline CVD-grown multilayer MoSe2 thin film transistor for fast photodetector. Sci. Rep. 5, 15313 (2015). https://doi.org/10.1038/srep15313
  56. Y.H. Chang, W. Zhang, Y. Zhu, Y. Han, J. Pu et al., Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano 8, 8582–8590 (2014). https://doi.org/10.1021/nn503287m
  57. H. Xu, J. Wu, Q. Feng, N. Mao, C. Wang, J. Zhang, High responsivity and gate tunable graphene-MoS2 hybrid phototransistor. Small 10, 2300 (2014). https://doi.org/10.1002/smll.201303670
  58. J. Schornbaum, B. Winter, S.P. Schießl, F. Gannott, G. Katsukis et al., Epitaxial growth of PbSe quantum dots on MoS2 nanosheets and their near-infrared photoresponse. Adv. Funct. Mater. 24, 5798–5806 (2014). https://doi.org/10.1002/adfm.201400330
  59. L. Ye, H. Li, Z. Chen, J. Xu, Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics 3, 692–699 (2016). https://doi.org/10.1021/acsphotonics.6b00079
  60. Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song et al., Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. ACS Nano 10, 573–580 (2016). https://doi.org/10.1021/acsnano.5b05596
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