Issue

Vol. 16 (2024)

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

https://doi.org/10.1007/s40820-024-01461-x
Jing Chen
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Ming‑Yuan Sun
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Zhen‑Hua Wang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Zheng Zhang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Kai Zhang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Shuai Wang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Yu Zhang
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China
Xiaoming Wu
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People’s Republic of China
Tian‑Ling Ren
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People’s Republic of China
Hong Liu
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong, People’s Republic of China
Lin Han
Institute of Marine Science and Technology, Shandong University, Qingdao 266237, Shandong, People’s Republic of China

Corresponding Author: Lin Han

hanlin@sdu.edu.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 264

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.


Highlights:
1 The review provides a comprehensive summary of performance limits of the single two-dimensional transition metal dichalcogenide (2D-TMD) transistor.
2 The review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage.
3 The review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices.

Keywords

Two-dimensional transistors Dimension limits Performance limits Memory devices Artificial synapses
Chen, Jing, Ming‑Yuan Sun, Zhen‑Hua Wang, Zheng Zhang, Kai Zhang, Shuai Wang, Yu Zhang, Xiaoming Wu, Tian‑Ling Ren, Hong Liu, and Lin Han. 2024. “Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor”. Nano-Micro Letters 16 (August):264. https://doi.org/10.1007/s40820-024-01461-x.
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