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Vol. 16 (2024)

Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response

https://doi.org/10.1007/s40820-024-01449-7
Xiaojun Zeng
School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, People’s Republic of China
Xiao Jiang
School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, People’s Republic of China
Ya Ning
School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, People’s Republic of China
Yanfeng Gao
School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, People’s Republic of China
Renchao Che
Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering and Technology, Fudan University, Shanghai 200438, People’s Republic of China

Corresponding Author: Renchao Che

rcche@fudan.edu.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 213

Abstract

The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS2, metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.


Highlights:
1 Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed.
2 Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching.
3 Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures.

Keywords

Semiconductor–semiconductor–metal heterostructure Semiconductor junctions Mott–Schottky junctions Built-in electric field Electromagnetic wave absorption
Zeng, Xiaojun, Xiao Jiang, Ya Ning, Yanfeng Gao, and Renchao Che. 2024. “Constructing Built-In Electric Fields With Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response”. Nano-Micro Letters 16 (June):213. https://doi.org/10.1007/s40820-024-01449-7.
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