Issue

Vol. 5 No. 3 (2013)

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

https://doi.org/10.1007/BF03353747
Serhan YAMACLI
Creighton Technologies Ltd., 145-157 St. John Street, EC1V 4PW, London, UK

Corresponding Author: Serhan YAMACLI

syamacli@nny.edu.tr

Nano-Micro Letters, Vol. 5 No. 3 (2013), Article Number: 169-173

Abstract

In this study, an algebraic current-voltage (I–V) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer’s formulation. A voltage and temperature dependent resistance expression is also obtained. It is shown that the presented algebraic I–V expression and the original Landauer’s formula give the same characteristics as expected. Moreover, the I–V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion (THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations.

Keywords

Landauer’s formula Ballistic nano conductors Nonlinearity
YAMACLI, Serhan. 2013. “Algebraic Current-Voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity”. Nano-Micro Letters 5 (3):169-73. https://doi.org/10.1007/BF03353747.
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