Recent Advances of Atomic/Molecular Layer Deposition Engineering Silicon Interface for Lithium-Ion Batteries
Corresponding Author: Xifei Li
Nano-Micro Letters,
Vol. 18 (2026), Article Number: 405
Abstract
Despite the ultra-high theoretical capacity of silicon (Si) anodes, their practical application is severely hindered by drastic volume effect and an unstable solid-electrolyte interphase (SEI). Atomic/molecular layer deposition (ALD/MLD) technology exhibits unique advantages in mitigating these challenges by constructing a stable and functionalized interface on Si anodes. This review summarizes recent advances and presents perspectives on ALD/MLD for Si anode interface engineering. Firstly, the existing interfacial challenges are analyzed: mechanical failure and structural degradation, complex/unstable SEI, and insufficient interfacial charge transfer. Subsequently, the key role and mechanism of ALD/MLD in enhancing the performance of Si anodes are elucidated from an atomic/molecular-scale interface engineering perspective. Crucially, three key aspects are emphasized: enhancing structural stability through mechanical confinement and stress dissipation, inducing the formation of stable SEI via ingenious interface chemical design, and constructing efficient ion/electron transport channels to optimize interfacial charge transfer kinetics. Finally, future research directions on ALD/MLD for Si anode interface engineering are proposed.
Hightlights:
1 Reveals the chemical-mechanical coupled process of interfacial failure in Si anodes.
2 Elucidates the core role of atomic/molecular layer deposition via atomic/molecular-scale interface engineering.
3 Demonstrates how tailored interfaces solve stability, solid-electrolyte interphase, and kinetics problems.
Keywords
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