Issue

Vol. 14 (2022)

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

https://doi.org/10.1007/s40820-022-00929-y
Qiuwei Shi
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Izzat Aziz
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Jin‑Hao Ciou
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Jiangxin Wang
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Dace Gao
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Jiaqing Xiong
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Pooi See Lee
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Corresponding Author: Pooi See Lee

pslee@ntu.edu.sg

Nano-Micro Letters, Vol. 14 (2022), Article Number: 195

Abstract

Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al2O3/HfO2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In0.37Ga0.20Zn0.18O0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al2O3/HfO2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al2O3, crystallized HfO2, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm2 V−1 s−1, ON/OFF ratio of ~ 1.3 × 106, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec−1, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.


Highlights:


1 A stable laminated Al2O3/HfO2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C.
2 The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al2O3/HfO2 insulator.
3 The flexible TFTs present the carrier mobilities of 9.7 cm2 V−1 s−1, ON/OFF ratio of ~ 1.3 × 106, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec−1.

Keywords

Nanolaminate dielectric Al2O3/HfO2 Thin-film transistors Flexible electronic
Shi, Qiuwei, Izzat Aziz, Jin‑Hao Ciou, Jiangxin Wang, Dace Gao, Jiaqing Xiong, and Pooi See Lee. 2022. “Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors”. Nano-Micro Letters 14 (September):195. https://doi.org/10.1007/s40820-022-00929-y.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. M. Moreira, E. Carlos, C. Dias, J. Deuermeier, M. Pereira et al., Tailoring IGZO composition for enhanced fully solution-based thin film transistors. Nanomaterials 9(9), 1273 (2019). https://doi.org/10.3390/nano9091273
  2. A. Olziersky, P. Barquinha, A. Vilà, C. Magaña, E. Fortunato et al., Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors. Mater. Chem. Phys. 131, 512–518 (2011). https://doi.org/10.1016/j.matchemphys.2011.10.013
  3. K. Myny, The development of flexible integrated circuits based on thin-film transistors. Nat. Electron. 1, 30–39 (2018). https://doi.org/10.1038/s41928-017-0008-6
  4. P. Yang, J. Zha, G. Gao, L. Zheng, H. Huang et al., Growth of tellurium nanobelts on h-BN for P-type transistors with ultrahigh hole mobility. Nano-Micro Lett. 14, 109 (2022). https://doi.org/10.1007/s40820-022-00852-2
  5. S. Wang, J. Xu, W. Wang, G.N. Wang, R. Rastak et al., Skin electronics from scalable fabrication of an intrinsically stretchable transistor array. Nature 555, 83–88 (2018). https://doi.org/10.1038/nature25494
  6. S. Jeon, S.E. Ahn, I. Song, C.J. Kim, U.I. Chung et al., Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. Nat. Mater. 11, 301–305 (2012). https://doi.org/10.1038/nmat3256
  7. L. Wang, W. Liao, S.L. Wong, Z.G. Yu, S. Li et al., Artificial synapses based on multiterminal memtransistors for neuromorphic application. Adv. Funct. Mater. 29(25), 1901106 (2019). https://doi.org/10.1002/adfm.201901106
  8. N. Cui, H. Ren, Q. Tang, X. Zhao, Y. Tong et al., Fully transparent conformal organic thin-film transistor array and its application as LED front driving. Nanoscale 10, 3613–3620 (2018). https://doi.org/10.1039/c7nr09134f
  9. H. Xu, D. Luo, M. Li, M. Xu, J. Zou et al., A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized aluminium oxide as dielectric. J. Mater. Chem. C 2, 1255–1259 (2014). https://doi.org/10.1039/c3tc31710b
  10. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, D. Kuščer et al., Performance and stability of low temperature transparent thin-film transistors using amorphous multicomponent dielectrics. J. Electrochem. Soc. 156, H824 (2009). https://doi.org/10.1149/1.3216049
  11. L. Li, Y. Liu, C. Song, S. Sheng, L. Yang et al., Wearable alignment-free microfiber-based sensor chip for precise vital signs monitoring and cardiovascular assessment. Adv. Fiber Mater. 4, 475–486 (2022). https://doi.org/10.1007/s42765-021-00121-8
  12. Z. Zhang, Y. Kang, N. Yao, J. Pan, W. Yu et al., A multifunctional airflow sensor enabled by optical micro/nanofiber. Adv. Fiber Mater. 3, 359–367 (2021). https://doi.org/10.1007/s42765-021-00097-5
  13. S. Lee, A. Nathan, Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain. Science 354(6310), 302–304 (2016). https://doi.org/10.1126/science.aah5035
  14. Z.W.K. Low, Z. Li, C. Owh, P.L. Chee, E. Ye et al., Using artificial skin devices as skin replacements: insights into superficial treatment. Small 15(9), 1805453 (2019). https://doi.org/10.1002/smll.201805453
  15. H. Shim, K. Sim, F. Ershad, P. Yang, A. Thukral et al., Stretchable elastic synaptic transistors for neurologically integrated soft engineering systems. Sci. Adv. 5, eaax4961 (2019). https://doi.org/10.1126/sciadv.aax4961
  16. I. Cunha, R. Barras, P. Grey, D. Gaspar, E. Fortunato et al., Reusable cellulose-based hydrogel sticker film applied as gate dielectric in paper electrolyte-gated transistors. Adv. Funct. Mater. 27(16), 1606755 (2017). https://doi.org/10.1002/adfm.201606755
  17. E. Carlos, R. Branquinho, R. Martins, E. Fortunato, New challenges of printed high-к oxide dielectrics. Solid State Electron. 183, 108044 (2021). https://doi.org/10.1016/j.sse.2021.108044
  18. T. Lei, L.L. Shao, Y.Q. Zheng, G. Pitner, G. Fang et al., Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes. Nat. Commun. 10, 2161 (2019). https://doi.org/10.1038/s41467-019-10145-9
  19. L.M. Peng, Z. Zhang, C. Qiu, Carbon nanotube digital electronics. Nat. Electron. 2, 499–505 (2019). https://doi.org/10.1038/s41928-019-0330-2
  20. F. Xu, M.Y. Wu, N.S. Safron, S.S. Roy, R.M. Jacobberger et al., Highly stretchable carbon nanotube transistors with ion gel gate dielectrics. Nano Lett. 14, 682–686 (2014). https://doi.org/10.1021/nl403941a
  21. D.M. Sun, C. Liu, W.C. Ren, H.M. Cheng, A review of carbon nanotube- and graphene-based flexible thin-film transistors. Small 9(8), 1188–1205 (2013). https://doi.org/10.1002/smll.201203154
  22. S. Ju, A. Facchetti, Y. Xuan, J. Liu, F. Ishikawa et al., Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nat. Nanotechnol. 2, 378–384 (2007). https://doi.org/10.1038/nnano.2007.151
  23. R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss et al., Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014). https://doi.org/10.1038/ncomms6143
  24. S.K. Lee, H.Y. Jang, S. Jang, E. Choi, B.H. Hong et al., All graphene-based thin film transistors on flexible plastic substrates. Nano Lett. 12, 3472–3476 (2012). https://doi.org/10.1021/nl300948c
  25. H. Matsui, Y. Takeda, S. Tokito, Flexible and printed organic transistors: from materials to integrated circuits. Org. Electron. 75, 105432 (2019). https://doi.org/10.1016/j.orgel.2019.105432
  26. J. Kwon, Y. Takeda, R. Shiwaku, S. Tokito, K. Cho et al., Three-dimensional monolithic integration in flexible printed organic transistors. Nat. Commun. 10, 54 (2019). https://doi.org/10.1038/s41467-018-07904-5
  27. H. Ren, N. Cui, Q. Tang, Y. Tong, X. Zhao et al., High-performance, ultrathin, ultraflexible organic thin-film transistor array via solution process. Small 14(33), 1801020 (2018). https://doi.org/10.1002/smll.201801020
  28. H. Chen, W. Zhang, M. Li, G. He, X. Guo, Interface engineering in organic field-effect transistors: principles, applications, and perspectives. Chem. Rev. 120, 2879–2949 (2020). https://doi.org/10.1021/acs.chemrev.9b00532
  29. X. Chen, G. Zhang, J. Wan, T. Guo, L. Li et al., Transparent and flexible thin-film transistors with high performance prepared at ultralow temperatures by atomic layer deposition. Adv. Electron. Mater. 5(2), 1800583 (2019). https://doi.org/10.1002/aelm.201800583
  30. S. Bolat, P. Fuchs, S. Knobelspies, O. Temel, G.T. Sevilla et al., Inkjet-printed and deep-UV-annealed YAlOx dielectrics for high-performance IGZO thin-film transistors on flexible substrates. Adv. Electron. Mater. 5(6), 1800843 (2019). https://doi.org/10.1002/aelm.201800843
  31. J.H. Kwon, J. Park, M.K. Lee, J.W. Park, Y. Jeon et al., Low-temperature fabrication of robust, transparent, and flexible thin-film transistors with a nanolaminated insulator. ACS Appl. Mater. Interfaces 10(18), 15829–15840 (2018). https://doi.org/10.1021/acsami.8b01438
  32. C. Qiu, Z. Zhang, M. Xiao, Y. Yang, D. Zhong et al., Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355(6322), 271–276 (2017). https://doi.org/10.1126/science.aaj1628
  33. D. Akinwande, N. Petrone, J. Hone, Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014). https://doi.org/10.1038/ncomms6678
  34. E. Fortunato, P. Barquinha, R. Martins, Oxide semiconductor thin-film transistors: a review of recent advances. Adv. Mater. 24(22), 2945–2986 (2012). https://doi.org/10.1002/adma.201103228
  35. P. Barquinha, L. Pereira, G. Gonçalves, R. Martins, E. Fortunato, Toward high-performance amorphous GIZO TFTs. J. Electrochem. Soc. 156, H161 (2009). https://doi.org/10.1149/1.3049819
  36. M. Kim, J.H. Jeong, H.J. Lee, T.K. Ahn, H.S. Shin et al., High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper. Appl. Phys. Lett. 90, 212114 (2007). https://doi.org/10.1063/1.2742790
  37. A. Gumyusenge, X. Luo, Z. Ke, D.T. Tran, J. Mei, Polyimide-based high-temperature plastic electronics. ACS Mater. Lett. 1, 154–157 (2019). https://doi.org/10.1021/acsmaterialslett.9b00120
  38. L.H. Kim, K. Kim, S. Park, Y.J. Jeong, H. Kim et al., Al2O3/TiO2 nanolaminate thin film encapsulation for organic thin film transistors via plasma-enhanced atomic layer deposition. ACS Appl. Mater. Interfaces 6(9), 6731–6738 (2014). https://doi.org/10.1021/am500458d
  39. J. Meyer, H. Schmidt, W. Kowalsky, T. Riedl, A. Kahn, The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition. Appl. Phys. Lett. 96, 243308 (2010). https://doi.org/10.1063/1.3455324
  40. J. Yang, X. Yang, Y. Zhang, B. Che, X. Ding et al., Improved gate bias stressing stability of IGZO thin film transistors using high-k compounded ZrO2/HfO2 nanolaminate as gate dielectric. Mol. Cryst. Liq. Cryst. 676, 65–71 (2019). https://doi.org/10.1080/15421406.2019.1595757
  41. Z. Liu, Z. Yin, J. Wang, Q. Zheng, Polyelectrolyte dielectrics for flexible low-voltage organic thin-film transistors in highly sensitive pressure sensing. Adv. Funct. Mater. 29(1), 1806092 (2019). https://doi.org/10.1002/adfm.201806092
  42. D.K. Schroder, Semiconductor Material and Device Characterization. pp. 489–502 (A JOHN WILEY & SONS, 2005). https://doi.org/10.1002/0471749095
  43. J. Zhang, X. Ding, J. Li, H. Zhang, X. Jiang et al., Performance enhancement in InZnO thin-film transistors with compounded ZrO2–Al2O3 nanolaminate as gate insulators. Ceram. Int. 42, 8115–8119 (2016). https://doi.org/10.1016/j.ceramint.2016.02.014
  44. S.P. Chang, D. Shan, Doping nitrogen in InGaZnO thin film transistor with double layer channel structure. J. Nanosci. Nanotechnol. 18, 2493–2497 (2018). https://doi.org/10.1166/jnn.2018.14344
  45. J. Koo, H. Jeon, Characteristics of an Al2O3/HfO2 bilayer deposited by atomic layer deposition for gate dielectric applications. J. Korean Phys. Soc. 46(4), 945–950 (2005)
  46. L. Zhou, Y. Liu, Q. Liu, B. Qi, Y. Chen et al., Effect of single Hf4+ ion substitution on microstructure and magnetic properties of hexagonal M-type Ba(Hf)xFe12−xO19 ferrites. J. Mater. Sci. Mater. Electron. 31, 4106–4112 (2020). https://doi.org/10.1007/s10854-020-02957-z
  47. W. Yang, R. Jiang, Bipolar plasticity of the synapse transistors based on IGZO channel with HfOxNy/HfO2/HfOxNy sandwich gate dielectrics. Appl. Phys. Lett. (2019). https://doi.org/10.1063/1.5100128
  48. P. Xiao, J. Huang, T. Dong, J. Yuan, D. Yan et al., X-ray photoelectron spectroscopy analysis of the effect of photoresist passivation on InGaZnO thin-film transistors. Appl. Surf. Sci. 471, 403–407 (2019). https://doi.org/10.1016/j.apsusc.2018.11.211
  49. Y. Liu, X. Wang, W. Chen, L. Zhao, W. Zhang et al., IGZO/Al2O3 based depressed synaptic transistor. Superlat. Microstruct. 128, 177–180 (2019). https://doi.org/10.1016/j.spmi.2019.01.026
  50. Y. Zhang, Y. Lin, G. He, B. Ge, W. Liu, Balanced performance improvement of a-InGaZnO thin-film transistors using ALD-derived Al2O3-passivated high-k HfGdOx dielectrics. ACS Appl. Electron. Mater. 2(11), 3728–3740 (2020). https://doi.org/10.1021/acsaelm.0c00763
  51. E. Lee, T.H. Kim, S.W. Lee, J.H. Kim, J. Kim et al., Improved electrical performance of a sol-gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing. Nano Converg. 6, 24 (2019). https://doi.org/10.1186/s40580-019-0194-1
  52. H. Jung, W.H. Kim, B.E. Park, W.J. Woo, I.K. Oh et al., Enhanced light stability of InGaZnO thin-film transistors by atomic-layer-deposited Y2O3 with ozone. ACS Appl. Mater. Interfaces 10(2), 2143–2150 (2018). https://doi.org/10.1021/acsami.7b14260
  53. F. Huang, S.Y. Kim, Z. Rao, S.J. Lee, J. Yoon et al., Protein biophotosensitizer-based IGZO photo-thin film transistors for monitoring harmful ultraviolet light. ACS Appl. Bio Mater. 2(7), 3030–3037 (2019). https://doi.org/10.1021/acsabm.9b00341
  54. C. Dong, G. Liu, Y. Zhang, G. Feng, Y. Zhou, Double-stacked gate insulators SiOx/TaOx for flexible amorphous InGaZnO thin film transistors. Mat. Sci. Semicon. Proc. 96, 99–103 (2019). https://doi.org/10.1016/j.mssp.2019.02.030
  55. J. He, G. Li, Y. Lv, C. Wang, C. Liu et al., Defect self-compensation for high-mobility bilayer InGaZnO/In2O3 thin-film transistor. Adv. Electron. Mater. 5(6), 1900125 (2019). https://doi.org/10.1002/aelm.201900125
Read More
Author biographies are not available.
Download this PDF file
PDF SUPPLEMENTARY MATERIAL
Statistic
Read Counter : 4922 Download : 3714

Most read articles by the same author(s)