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Vol. 2 No. 2 (2010)

Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied

https://doi.org/10.1007/BF03353630
Md. Abdul Wahab
Department of Electrical and Electronic Engineering, United International University, Dhaka-1209, Bangladesh
Khairul Alam
Department of Electrical and Electronic Engineering, East West University, Dhaka-1212, Bangladesh

Corresponding Author: Md. Abdul Wahab

awahab@eee.uiu.ac.bd

Nano-Micro Letters, Vol. 2 No. 2 (2010), Article Number: 126-133

Abstract

Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors (CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.

Keywords

Zero-Schottky-barrier Doped contact Strain Inverse subthreshold slope Intrinsic cut-off frequency
Wahab, Md. Abdul, and Khairul Alam. 2010. “Performance Comparison of Zero-Schottky-Barrier and Doped Contacts Carbon Nanotube Transistors With Strain Applied”. Nano-Micro Letters 2 (2):126-33. https://doi.org/10.1007/BF03353630.
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