Issue

Vol. 5 No. 1 (2013)

Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-one-dimensional Nanostructures

https://doi.org/10.1007/BF03353724
M. X. Wang
Department of Materials Science and Engineering, Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China
G. H. Yue
Department of Materials Science and Engineering, Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China
Y. D. Lin
Department of Materials Science and Engineering, Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China
X. Wen
Department of Materials Science and Engineering, Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China
D.L Peng
Department of Materials Science and Engineering, Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China
Z. R. Geng
School of Mechatronic Engineering, Lanzhou Jiao Tong University, Lanzhou, 730070, China

Corresponding Author: G. H. Yue

yuegh@xmu.edu.cn

Nano-Micro Letters, Vol. 5 No. 1 (2013), Article Number: 1-6

Abstract

Low-toxicity single crystal SnS nanowires had been successfully synthesized by the catalyst-assistant chemical vapor deposition. Au nanoparticles were applied on the ITO surface as the catalysis, using SnS powder and S powder as forerunners. The structure, morphology and optical properties of the prepared SnS nanowires were characterized. The experimental results show the as-synthesized nanowires are single crystalline with a preferential orientation. The synthesized SnS nanowires show strong absorption in the visible and near-infrared spectral region, and the direct energy band gap of SnS nanowires is 1.46 eV.

Keywords

Nanostructure Chemical vapor deposition Crystal growth Optical property
Wang, M. X., G. H. Yue, Y. D. Lin, X. Wen, D.L Peng, and Z. R. Geng. 2013. “Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-One-Dimensional Nanostructures”. Nano-Micro Letters 5 (1):1-6. https://doi.org/10.1007/BF03353724.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. N. K. Reddy, Y. B. Hahn, M. Devika, H. R. Sumana and K. R. Gunasekhar, “Temperature-dependent structural and optical properties of SnS films”, J Appl. Phys. 101, 093522–093528 (2007). http://dx.doi.org/10.1063/1.2729450
  2. G. H. Yue, D. L. Peng and P. X. Yan, “Structure and optical properties of SnS thin film prepared by pulse electrodeposition”, J. Alloys Compd. 468(1–2), 254–257 (2009). http://dx.doi.org/10.1016/j.jallcom.2008.01.047
  3. C. W. Wolfe, “Physical properties of semiconductors”, Prentice-Hall, Englewood Cliffs, NJ (1989).
  4. M. Devika, N. K. Reddy and K. Ramesh, “Low resistive micrometer-thick SnS: Ag films for optoelectronic applications”, J. Electrochem. Soc. 153(8), G727–G733 (2006). http://dx.doi.org/10.1149/1.2204870
  5. A. Ghazali, Z. Zainal, M. Z. Hussein and A. Kassim, “Cathodic electrodeposition of SnS in the presence of EDTA in aqueous media”, Sol. Energ. Mat. Sol. C. 55(3), 237–249 (1998). http://dx.doi.org/10.1016/S0927-0248(98)00106-8
  6. G. H. Yue and W. Wang, “The effect of anneal tem- perature on physical properties of SnS films”, J. Al- loy. Compd. 474(1–2), 445–449 (2009). http://dx.doi.org/10.1016/j.jallcom.2008.06.105
  7. M. Parenteau and C. Carlone, “Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors”, Phys. Rev. B 41(8), 5227–5234 (1990). http://dx.doi.org/10.1103/PhysRevB. 41.5227
  8. B. Subramanian, C. Sanjeeviraja and M. Jayachandran, “Photoelectrochemical characteristics of brush plated tin sulfide thin films”, Sol. Energ. Mat. Sol. C. 79(1), 57–65 (2003). http://dx.doi.org/10.1016/ S0927-0248(02)00366-5
  9. B. Thangaraju and P. Kaliannan, “Spray pyrolytic deposition and characterization of SnS and SnS2 thin films”, J. Phys. D: Appl. Phys. 33, 1054–1059 (2000). http://dx.doi.org/10.1088/0022-3727/33/9/304
  10. L. S. Price, I. P. Parkin and M. N. Field, “Atmospheric pressure chemical vapour deposition of tin(II) sulfide films on glass substrates from Bun3SnO2CCF3 with hydrogen sulfide”, J. Mater. Chem. 10(2), 527–530 (2000). http://dx.doi.org/10.1039/a907939d
  11. A. Tanusevski, “Optical and photoelectric properties of SnS thin films prepared by chemical bath deposition”, Semicond. Sci. Technol. 18, 501–505 (2003). http://dx.doi.org/10.1088/0268-1242/18/6/318
  12. D. S. Koktysh, J. R. McBride and S. J. Rosenthal, “Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor”, Nanoscale Res. Lett. 2, 144–148 (2007). http://dx.doi.org/10. 1007/s11671-007-9045-9
  13. Y. K. Liu, D. D. Hou and G. H. Wang, “Synthesis and characterization of SnS nanowires in cetyltrimethylammoniumbromide (CTAB) aqueous solution”, Chem. Phys. Lett. 379(1–2), 67–73 (2003). http://dx.doi.org/10.1016/j.cplett.2003.08.014
  14. S. Biswas, S. Kar and S. Chaudhuri, “Thioglycolic acid (TGA) assisted hydrothermal synthesis of SnS nanorods and nanosheets”, Appl. Surf. Sci. 253(23), 9259–9266 (2007). http://dx.doi.org/10. 1016/j.apsusc.2007.05.053
  15. S. K. Panda, A. Datta, A. Dev, S. Gorai and S. Chaudhuri, “Surfactant-assisted synthesis of SnS nanowires grown on tin foils”, Cryst. Growth Des. 6(9), 2177–2181 (2006). http://dx.doi.org/10.1021/cg0602156
  16. J. Kang, J. Park and D. Kim, “Superior rate capabilities of SnS nanosheet electrodes for Li ion batteries”, Electrochem. Commun. 12(2), 307–310 (2010). http://dx.doi.org/10.1016/j.elecom.2009.12.025
  17. G. H. Yue, L. S. Wang, X. Wang, Y. Z. Chen and D. L. Peng, “Characterization and optical properties of the single crystalline SnS nanowire arrays”, Nanoscale Res. Lett. 4, 359–363 (2009). http://dx.doi.org/10. 1007/s11671-009-9253-6
  18. J. Z. Liu, P. X. Yan, G. H. Yue, J. B. Chang, R. F. Zhuo and D. M. Qu, “Controllable synthesis of undoped/Cd-doped ZnO nanostructures”, Mater. Lett. 60(25–26), 3122–3125 (2006). http://dx.doi.org/10.1016/j.matlet.2006.02.056
  19. G. H. Yue, Y. D. Lin and X. Wen, “Synthesis and characterization of the SnS nanowires via chemical vapor deposition”, Appl. Phys. A Mater. Sci. Process. 106(1), 87–91 (2012). http://dx.doi.org/10.1007/ s00339-011-6560-4
  20. D. Avellaneda, G. Delgado, M. T. S. Nair and P. K. Nair, “Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells”, Thin Solid Films 515(15), 5771–5776 (2007). http://dx.doi.org/10.1016/j.tsf.2006.12.078
  21. H. Tang, G. Y. Xu, L. Q. Weng, L. J. Pan and L. Wang, “Luminescence and photophysical properties of colloidal ZnS nanoparticles”, Acta Mater. 52(6), 1489–1494 (2004). http://dx.doi.org/ 10.1016/j.actamat.2003.11.030
  22. T. Takagahara, “Effects of dielectric confinement and electron-hole exchange interaction on excitonic states in semiconductor quantum dots”, Phys. Rev. B 47(8), 4569–4584 (1993). http://dx.doi.org/10. 1103/PhysRevB.47.4569
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 2046 Download : 1553