Issue

Vol. 12 (2020)

Surface-Modified Graphene Oxide/Lead Sulfide Hybrid Film-Forming Ink for High-Efficiency Bulk Nano-Heterojunction Colloidal Quantum Dot Solar Cells

https://doi.org/10.1007/s40820-020-00448-8
Yaohong Zhang
Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182‑8585, Japan
Guohua Wu
School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, People’s Republic of China
Chao Ding
Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182‑8585, Japan
Feng Liu
Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182‑8585, Japan
Dong Liu
Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182‑8585, Japan
Taizo Masuda
X‑Frontier Division, Toyota Motor Corporation, Shizuoka 471‑8571, Japan
Kenji Yoshino
Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889‑2192, Japan
Shuzi Hayase
Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182‑8585, Japan
Ruixiang Wang
Beijing Engineering Research Centre of Sustainable Energy and Buildings, Beijing University of Civil, Engineering and Architecture, Beijing 102616, People’s Republic of China
Qing Shen
Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182‑8585, Japan

Corresponding Author: Qing Shen

shen@pc.uec.ac.jp

Nano-Micro Letters, Vol. 12 (2020), Article Number: 111

Abstract

Solution-processed colloidal quantum dot solar cells (CQDSCs) is a promising candidate for new generation solar cells. To obtain stable and high performance lead sulfide (PbS)-based CQDSCs, high carrier mobility and low non-radiative recombination center density in the PbS CQDs active layer are required. In order to effectively improve the carrier mobility in PbS CQDs layer of CQDSCs, butylamine (BTA)-modified graphene oxide (BTA@GO) is first utilized in PbS-PbX2 (X = I−, Br−) CQDs ink to deposit the active layer of CQDSCs through one-step spin-coating method. Such surface treatment of GO dramatically upholds the intrinsic superior hole transfer peculiarity of GO and attenuates the hydrophilicity of GO in order to allow for its good dispersibility in ink solvent. The introduction of BTA@GO in CQDs layer can build up a bulk nano-heterojunction architecture, which provides a smooth charge carrier transport channel in turn improves the carrier mobility and conductivity, extends the carriers lifetime and reduces the trap density of PbS-PbX2 CQDs film. Finally, the BTA@GO/PbS-PbX2 hybrid CQDs film-based relatively large-area (0.35 cm2) CQDSCs shows a champion power conversion efficiency of 11.7% which is increased by 23.1% compared with the control device.


Highlights:


1 Butylamine-modified graphene oxide (BTA@GO) is first utilized in PbS colloidal quantum dots (CQDs) ink to deposit the active layer of colloidal quantum dot solar cells (CQDSCs).
2 The BTA@GO improves the carrier transfer rate in the CQDs active layer and 11.7% conversion efficiency is achieved.

Keywords

Quantum dot solar cells PbS colloidal quantum dots Hole extraction Graphene oxide Surface modified
Zhang, Yaohong, Guohua Wu, Chao Ding, Feng Liu, Dong Liu, Taizo Masuda, Kenji Yoshino, Shuzi Hayase, Ruixiang Wang, and Qing Shen. 2020. “Surface-Modified Graphene Oxide/Lead Sulfide Hybrid Film-Forming Ink for High-Efficiency Bulk Nano-Heterojunction Colloidal Quantum Dot Solar Cells”. Nano-Micro Letters 12 (May):111. https://doi.org/10.1007/s40820-020-00448-8.
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