Issue

Vol. 17 (2025)

Wafer-Scale Vertical 1D GaN Nanorods/2D MoS2/PEDOT:PSS for Piezophototronic Effect-Enhanced Self-Powered Flexible Photodetectors

https://doi.org/10.1007/s40820-024-01553-8
Xin Tang
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China
Hongsheng Jiang
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China
Zhengliang Lin
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China
Xuan Wang
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China
Wenliang Wang
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China
Guoqiang Li
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People’s Republic of China

Corresponding Author: Guoqiang Li

msgli@scut.edu.cn

Nano-Micro Letters, Vol. 17 (2025), Article Number: 56

Abstract

van der Waals (vdW) heterostructures constructed by low-dimensional (0D, 1D, and 2D) materials are emerging as one of the most appealing systems in next-generation flexible photodetection. Currently, hand-stacked vdW-type photodetectors are not compatible with large-area-array fabrication and show unimpressive performance in self-powered mode. Herein, vertical 1D GaN nanorods arrays (NRAs)/2D MoS2/PEDOT:PSS in wafer scale have been proposed for self-powered flexible photodetectors arrays firstly. The as-integrated device without external bias under weak UV illumination exhibits a competitive responsivity of 1.47 A W−1 and a high detectivity of 1.2 × 1011 Jones, as well as a fast response speed of 54/71 µs, thanks to the strong light absorption of GaN NRAs and the efficient photogenerated carrier separation in type-II heterojunction. Notably, the strain-tunable photodetection performances of device have been demonstrated. Impressively, the device at − 0.78% strain and zero bias reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W−1, a detectivity of 2.6 × 1011 Jones, and response times of 40/45 µs, which are superior to the state-of-the-art self-powered flexible photodetectors. This work presents a valuable avenue to prepare tunable vdWs heterostructures for self-powered flexible photodetection, which performs well in flexible sensors.


Highlights:
1 Vertical 1D GaN nanorod arrays/2D MoS2/PEDOT:PSS heterostructures in wafer scale have been fabricated for flexible photodetection firstly.
2 Self-powered flexible photodetector at compressive strain reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W−1 and response times of 40/45 µs, which are superior to the state-of-the-art flexible devices.
3 This work not only provides a valuable strategy for the design and construction of tunable van der Waals heterostructures, but also opens a new opportunity for flexible sensors.

Keywords

Vertical nanorod arrays van der Waals heterostructure Piezophototronic effect Self-powered photodetection Flexible sensors
Tang, Xin, Hongsheng Jiang, Zhengliang Lin, Xuan Wang, Wenliang Wang, and Guoqiang Li. 2024. “Wafer-Scale Vertical 1D GaN Nanorods/2D MoS2/PEDOT:PSS for Piezophototronic Effect-Enhanced Self-Powered Flexible Photodetectors”. Nano-Micro Letters 17 (November):56. https://doi.org/10.1007/s40820-024-01553-8.
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