Issue

Vol. 16 (2024)

New-Generation Ferroelectric AlScN Materials

https://doi.org/10.1007/s40820-024-01441-1
Yalong Zhang
Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‑Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, People’s Republic of China
Qiuxiang Zhu
Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‑Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, People’s Republic of China
Bobo Tian
Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‑Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, People’s Republic of China
Chungang Duan
Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‑Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, People’s Republic of China

Corresponding Author: Bobo Tian

bbtian@ee.ecnu.edu.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 227

Abstract

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.


Highlights:
1 Ferroelectricity and domain dynamics of emerging ferroelectric AlScN films were discussed.
2 The performance optimization of ferroelectric AlScN films grown by different deposition techniques was comprehensively analyzed.
3 The challenges and perspectives regarding the commercial avenue of AlScN-based memories and in-memory computing applications were summarized.

Keywords

AlScN Ferroelectrics Nonvolatile memory In-memory computing
Zhang, Yalong, Qiuxiang Zhu, Bobo Tian, and Chungang Duan. 2024. “New-Generation Ferroelectric AlScN Materials”. Nano-Micro Letters 16 (June):227. https://doi.org/10.1007/s40820-024-01441-1.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. M. Hilbert, P. López, The world’s technological capacity to store, communicate, and compute information. Science 332, 60–65 (2011). https://doi.org/10.1126/science.1200970
  2. R. Huo, S. Zeng, Z. Wang, J. Shang, W. Chen et al., A comprehensive survey on blockchain in industrial Internet of Things: motivations, research progresses, and future challenges. IEEE Commun. Surv. Tutor. 24, 88–122 (2022). https://doi.org/10.1109/COMST.2022.3141490
  3. M. Mohammadi, A. Al-Fuqaha, S. Sorour, M. Guizani, Deep learning for IoT big data and streaming analytics: a survey. IEEE Commun. Surv. Tutor. 20, 2923–2960 (2018). https://doi.org/10.1109/COMST.2018.2844341
  4. S. Gao, X. Yi, J. Shang, G. Liu, R.-W. Li, Organic and hybrid resistive switching materials and devices. Chem. Soc. Rev. 48, 1531–1565 (2019). https://doi.org/10.1039/c8cs00614h
  5. C. Seife, Big data: the revolution is digitized. Nature 518, 480–481 (2015). https://doi.org/10.1038/518480a
  6. M.S. Gordon, T.L. Windus, Editorial: modern architectures and their impact on electronic structure theory. Chem. Rev. 120, 9015–9020 (2020). https://doi.org/10.1021/acs.chemrev.0c00700
  7. X. Niu, B. Tian, Q. Zhu, B. Dkhil, C. Duan, Ferroelectric polymers for neuromorphic computing. Appl. Phys. Rev. 9, 021309 (2022). https://doi.org/10.1063/5.0073085
  8. X. Hou, C. Liu, Y. Ding, L. Liu, S. Wang et al., A logic-memory transistor with the integration of visible information sensing-memory-processing. Adv. Sci. 7, 2002072 (2020). https://doi.org/10.1002/advs.202002072
  9. D. Hao, Z. Yang, J. Huang, F. Shan, Recent developments of optoelectronic synaptic devices based on metal halide perovskites. Adv. Funct. Mater. 33, 2211467 (2023). https://doi.org/10.1002/adfm.202211467
  10. J. Liao, W. Wen, J. Wu, Y. Zhou, S. Hussain et al., Van der waals ferroelectric semiconductor field effect transistor for in-memory computing. ACS Nano 17, 6095–6102 (2023). https://doi.org/10.1021/acsnano.3c01198
  11. Z.Y. He, T.Y. Wang, J.L. Meng, H. Zhu, L. Ji et al., CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications. Mater. Horiz. 8, 3345–3355 (2021). https://doi.org/10.1039/d1mh01257f
  12. G. Wu, B. Tian, L. Liu, W. Lv, S. Wu et al., Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nat. Electron. 3, 43–50 (2020). https://doi.org/10.1038/s41928-019-0350-y
  13. B.B. Tian, J.L. Wang, S. Fusil, Y. Liu, X.L. Zhao et al., Tunnel electroresistance through organic ferroelectrics. Nat. Commun. 7, 11502 (2016). https://doi.org/10.1038/ncomms11502
  14. L. Shi, G. Zheng, B. Tian, B. Dkhil, C. Duan, Research progress on solutions to the sneak path issue in memristor crossbar arrays. Nanoscale Adv. 2, 1811–1827 (2020). https://doi.org/10.1039/D0NA00100G
  15. B. Tian, L. Liu, M. Yan, J. Wang, Q. Zhao et al., A robust artificial synapse based on organic ferroelectric polymer. Adv. Electron. Mater. 5, 1800600 (2019). https://doi.org/10.1002/aelm.201800600
  16. M. Le Gallo, A. Sebastian, R. Mathis, M. Manica, H. Giefers et al., Mixed-precision in-memory computing. Nat. Electron. 1, 246–253 (2018). https://doi.org/10.1038/s41928-018-0054-8
  17. G. Karunaratne, M. Le Gallo, G. Cherubini, L. Benini, A. Rahimi et al., In-memory hyperdimensional computing. Nat. Electron. 3, 327–337 (2020). https://doi.org/10.1038/s41928-020-0410-3
  18. W. Wan, R. Kubendran, C. Schaefer, S.B. Eryilmaz, W. Zhang et al., A compute-in-memory chip based on resistive random-access memory. Nature 608, 504–512 (2022). https://doi.org/10.1038/s41586-022-04992-8
  19. J.S. Vetter, S. Mittal, Opportunities for nonvolatile memory systems in extreme-scale high-performance computing. Comput. Sci. Eng. 17, 73–82 (2015). https://doi.org/10.1109/MCSE.2015.4
  20. K. Prall, Benchmarking and metrics for emerging memory, in 2017 IEEE International Memory Workshop (IMW) (IEEE, Monterey, CA, USA, 2017), pp. 1–5
  21. J.A. Rodriguez, K. Remack, K. Boku, K.R. Udayakumar, S. Aggarwal et al., Reliability properties of low-voltage ferroelectric capacitors and memory arrays. IEEE Trans. Device Mater. Relib. 4, 436–449 (2004). https://doi.org/10.1109/tdmr.2004.837210
  22. A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil et al., Solid-state memories based on ferroelectric tunnel junctions. Nat. Nanotechnol. 7, 101–104 (2011). https://doi.org/10.1038/nnano.2011.213
  23. M.J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang et al., A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5–x)/TaO(2–x) bilayer structures. Nat. Mater. 10, 625–630 (2011). https://doi.org/10.1038/nmat3070
  24. W. Banerjee, Challenges and applications of emerging nonvolatile memory devices. Electronics 9, 1029 (2020). https://doi.org/10.3390/electronics9061029
  25. Z. Luo, Z. Wang, Z. Guan, C. Ma, L. Zhao et al., High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing. Nat. Commun. 13, 699 (2022). https://doi.org/10.1038/s41467-022-28303-x
  26. G. Wu, X. Zhang, G. Feng, J. Wang, K. Zhou et al., Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. Nat. Mater. 22, 1499–1506 (2023). https://doi.org/10.1038/s41563-023-01676-0
  27. G. Feng, Q. Zhu, X. Liu, L. Chen, X. Zhao et al., A ferroelectric fin diode for robust non-volatile memory. Nat. Commun. 15, 513 (2024). https://doi.org/10.1038/s41467-024-44759-5
  28. D. Wang, S. Hao, B. Dkhil, B. Tian, C. Duan, Ferroelectric materials for neuroinspired computing applications. Fundam. Res. (2023). https://doi.org/10.1016/j.fmre.2023.04.013
  29. R. Berdan, T. Marukame, K. Ota, M. Yamaguchi, M. Saitoh et al., Low-power linear computation using nonlinear ferroelectric tunnel junction memristors. Nat. Electron. 3, 259–266 (2020). https://doi.org/10.1038/s41928-020-0405-0
  30. Q. Luo, Y. Cheng, J. Yang, R. Cao, H. Ma et al., A highly CMOS compatible hafnia-based ferroelectric diode. Nat. Commun. 11, 1391 (2020). https://doi.org/10.1038/s41467-020-15159-2
  31. F. Ambriz-Vargas, G. Kolhatkar, M. Broyer, A. Hadj-Youssef, R. Nouar et al., A complementary metal oxide semiconductor process-compatible ferroelectric tunnel junction. ACS Appl. Mater. Interfaces 9, 13262–13268 (2017). https://doi.org/10.1021/acsami.6b16173
  32. Z. Shen, L. Liao, Y. Zhou, K. Xiong, J. Zeng et al., Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films. Appl. Phys. Lett. 120, 162904 (2022). https://doi.org/10.1063/5.0087976
  33. Z. Zhao, Y.R. Chen, J.F. Wang, Y.W. Chen, J.R. Zou et al., Engineering Hf0.5Zr0.5O2 ferroelectric/anti-ferroelectric phases with oxygen vacancy and interface energy achieving high remanent polarization and dielectric constants. IEEE Electron Device Lett. 43, 553–556 (2022). https://doi.org/10.1109/LED.2022.3149309
  34. R. Athle, A.E.O. Persson, A. Irish, H. Menon, R. Timm et al., Effects of TiN top electrode texturing on ferroelectricity in Hf1-xZrxO2. ACS Appl. Mater. Interfaces 13, 11089–11095 (2021). https://doi.org/10.1021/acsami.1c01734
  35. P.S. Ghosh, D. DeTellem, J. Ren, S. Witanachchi, S. Ma et al., Unusual properties of hydrogen-bonded ferroelectrics: the case of cobalt formate. Phys. Rev. Lett. 128, 077601 (2022). https://doi.org/10.1103/PhysRevLett.128.077601
  36. L. Hu, R. Feng, J. Wang, Z. Bai, W. Jin et al., Space-charge-stabilized ferroelectric polarization in self-oriented croconic acid films. Adv. Funct. Mater. 28, 1705463 (2018). https://doi.org/10.1002/adfm.201705463
  37. F. Mehmood, M. Hoffmann, P.D. Lomenzo, C. Richter, M. Materano et al., Bulk depolarization fields as a major contributor to the ferroelectric reliability performance in lanthanum doped Hf0.5Zr0.5O2 capacitors. Adv. Mater. Interfaces 6, 1901180 (2019). https://doi.org/10.1002/admi.201901180
  38. J. Hayden, M.D. Hossain, Y. Xiong, K. Ferri, W. Zhu et al., Ferroelectricity in boron-substituted aluminum nitride thin films. Phys. Rev. Mater. 5, 044412 (2021). https://doi.org/10.1103/physrevmaterials.5.044412
  39. K. Ferri, S. Bachu, W. Zhu, M. Imperatore, J. Hayden et al., Ferroelectrics everywhere: ferroelectricity in magnesium substituted zinc oxide thin films. J. Appl. Phys. 130, 044101 (2021). https://doi.org/10.1063/5.0053755
  40. D. Wang, P. Wang, B. Wang, Z. Mi, Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy. Appl. Phys. Lett. 119, 111902 (2021). https://doi.org/10.1063/5.0060021
  41. A.I. Mardare, C.C. Mardare, E. Joanni, Bottom electrode crystallization of PZT thin films for ferroelectric capacitors. J. Eur. Ceram. Soc. 25, 735–741 (2005). https://doi.org/10.1016/j.jeurceramsoc.2003.12.031
  42. G. Le Rhun, G. Poullain, R. Bouregba, G. Leclerc, Fatigue properties of oriented PZT ferroelectric thin films. J. Eur. Ceram. Soc. 25, 2281–2284 (2005). https://doi.org/10.1016/j.jeurceramsoc.2005.03.046
  43. A. Datta, D. Mukherjee, S. Witanachchi, P. Mukherjee, Hierarchically ordered nano-heterostructured PZT thin films with enhanced ferroelectric properties. Adv. Funct. Mater. 24, 2638–2647 (2014). https://doi.org/10.1002/adfm.201303290
  44. D.H. Li, E.S. Lee, H.W. Chung, S.Y. Lee, Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications. Appl. Surf. Sci. 252, 4541–4544 (2006). https://doi.org/10.1016/j.apsusc.2005.07.133
  45. K.R. Udayakumar, P.J. Schuele, J. Chen, S.B. Krupanidhi, L.E. Cross, Thickness-dependent electrical characteristics of lead zirconate titanate thin films. J. Appl. Phys. 77, 3981–3986 (1995). https://doi.org/10.1063/1.359508
  46. S. Samanta, V. Sankaranarayanan, K. Sethupathi, Band gap, piezoelectricity and temperature dependence of differential permittivity and energy storage density of PZT with different Zr/Ti ratios. Vacuum 156, 456–462 (2018). https://doi.org/10.1016/j.vacuum.2018.08.015
  47. E.M. Lee, Y. Ahn, J.Y. Son, Effects of Mn doping on BaTiO3 thin films grown on highly oriented pyrolytic graphite substrates. Curr. Appl. Phys. 20, 755–759 (2020). https://doi.org/10.1016/j.cap.2020.03.009
  48. J.L. Lin, R. He, Z. Lu, Y. Lu, Z. Wang et al., Oxygen vacancy enhanced ferroelectricity in BTO: SRO nanocomposite films. Acta Mater. 199, 9–18 (2020). https://doi.org/10.1016/j.actamat.2020.08.016
  49. H.H. Wieder, Electrical behavior of barium titanatge single crystals at low temperatures. Phys. Rev. 99, 1161–1165 (1955). https://doi.org/10.1103/physrev.99.1161
  50. C.A.-P. de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott, Fatigue-free ferroelectric capacitors with platinum electrodes. Nature 374, 627–629 (1995). https://doi.org/10.1038/374627a0
  51. J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S.B. Ogale et al., Epitaxial BiFeO3 multiferroic thin film heterostructures. Science 299, 1719–1722 (2003). https://doi.org/10.1126/science.1080615
  52. N. Wang, X. Luo, L. Han, Z. Zhang, R. Zhang et al., Structure, performance, and application of BiFeO3 nanomaterials. Nano-Micro Lett. 12, 81 (2020). https://doi.org/10.1007/s40820-020-00420-6
  53. G. Catalan, J.F. Scott, Physics and applications of bismuth ferrite. Adv. Mater. 21, 2463–2485 (2009). https://doi.org/10.1002/adma.200802849
  54. M.A. Rafiq, M.E. Costa, P.M. Vilarinho, Pairing high piezoelectric coefficients, d33, with high curie temperature (TC) in lead-free (K, Na)NbO3. ACS Appl. Mater. Interfaces 8, 33755–33764 (2016). https://doi.org/10.1021/acsami.6b08199
  55. Y. Chang, S. Poterala, Z. Yang, G.L. Messing, Enhanced electromechanical properties and temperature stability of textured (K0.5Na0.5)NbO3-based piezoelectric ceramics. J. Am. Ceram. Soc. 94, 2494–2498 (2011). https://doi.org/10.1111/j.1551-2916.2011.04393.x
  56. J. Bouaziz, P.R. Romeo, N. Baboux, B. Vilquin, Huge reduction of the wake-up effect in ferroelectric HZO thin films. ACS Appl. Electron. Mater. 1, 1740–1745 (2019). https://doi.org/10.1021/acsaelm.9b00367
  57. V. Gaddam, D. Das, S. Jeon, Insertion of HfO2 seed/dielectric layer to the ferroelectric HZO films for heightened remanent polarization in MFM capacitors. IEEE Trans. Electron Devices 67, 745–750 (2020). https://doi.org/10.1109/TED.2019.2961208
  58. B. Liu, Y. Zhang, L. Zhang, Q. Yuan, W. Zhang et al., Excellent HZO ferroelectric thin films on flexible PET substrate. J. Alloys Compd. 919, 165872 (2022). https://doi.org/10.1016/j.jallcom.2022.165872
  59. P. Wang, D. Wang, N.M. Vu, T. Chiang, J.T. Heron et al., Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy. Appl. Phys. Lett. 118, 223504 (2021). https://doi.org/10.1063/5.0054539
  60. M.R. Islam, N. Wolff, M. Yassine, G. Schönweger, B. Christian et al., On the exceptional temperature stability of ferroelectric Al1-xScxN thin films. Appl. Phys. Lett. 118, 232905 (2021). https://doi.org/10.1063/5.0053649
  61. R. Guido, P.D. Lomenzo, M.R. Islam, N. Wolff, M. Gremmel et al., Thermal stability of the ferroelectric properties in 100 nm-thick Al0.72Sc0.28N. ACS Appl. Mater. Interfaces 15, 7030–7043 (2023). https://doi.org/10.1021/acsami.2c18313
  62. D. Wang, J. Zheng, P. Musavigharavi, W. Zhu, A.C. Foucher et al., Ferroelectric switching in sub-20 nm aluminum scandium nitride thin films. IEEE Electron Device Lett. 41(12), 1774–1777 (2020). https://doi.org/10.1109/LED.2020.3034576
  63. A.V. Bune, V.M. Fridkin, S. Ducharme, L.M. Blinov, S.P. Palto et al., Two-dimensional ferroelectric films. Nature 391, 874–877 (1998). https://doi.org/10.1038/36069
  64. T. Furukawa, Ferroelectric properties of vinylidene fluoride copolymers. Phase Transitions 18, 143–211 (1989). https://doi.org/10.1080/01411598908206863
  65. B.B. Tian, X.F. Bai, Y. Liu, P. Gemeiner, X.L. Zhao et al., β phase instability in poly(vinylidene fluoride/trifluoroethylene) thin films near β relaxation temperature. Appl. Phys. Lett. 106, 092902 (2015). https://doi.org/10.1063/1.4913968
  66. S. Ducharme, V.M. Fridkin, A.V. Bune, S.P. Palto, L.M. Blinov et al., Intrinsic ferroelectric coercive field. Phys. Rev. Lett. 84, 175–178 (2000). https://doi.org/10.1103/PhysRevLett.84.175
  67. W.-Q. Liao, D. Zhao, Y.-Y. Tang, Y. Zhang, P.-F. Li et al., A molecular perovskite solid solution with piezoelectricity stronger than lead zirconate titanate. Science 363, 1206–1210 (2019). https://doi.org/10.1126/science.aav3057
  68. P.-F. Li, W.-Q. Liao, Y.-Y. Tang, W. Qiao, D. Zhao et al., Organic enantiomeric high-Tc ferroelectrics. Proc. Natl. Acad. Sci. U.S.A. 116, 5878–5885 (2019). https://doi.org/10.1073/pnas.1817866116
  69. J. Valasek, Piezo-electric and allied phenomena in Rochelle salt. Phys. Rev. 17, 475–481 (1921). https://doi.org/10.1103/physrev.17.475
  70. H.-Y. Zhang, Y.-Y. Tang, P.-P. Shi, R.-G. Xiong, Toward the targeted design of molecular ferroelectrics: modifying molecular symmetries and homochirality. Acc. Chem. Res. 52, 1928–1938 (2019). https://doi.org/10.1021/acs.accounts.8b00677
  71. G. Busch, P. Scherrer, Eine neue seignette-elektrische Substanz. Naturwissenschaften 23, 737 (1935). https://doi.org/10.1007/BF01498152
  72. Q. Zhao, H. Wang, Z. Ni, J. Liu, Y. Zhen et al., Organic ferroelectric-based 1T1T random access memory cell employing a common dielectric layer overcoming the half-selection problem. Adv. Mater. 29, 1701907 (2017). https://doi.org/10.1002/adma.201701907
  73. J. Hoffman, X. Pan, J.W. Reiner, F.J. Walker, J.P. Han et al., Ferroelectric field effect transistors for memory applications. Adv. Mater. 22, 2957–2961 (2010). https://doi.org/10.1002/adma.200904327
  74. X. Qian, X. Chen, L. Zhu, Q.M. Zhang, Fluoropolymer ferroelectrics: multifunctional platform for polar-structured energy conversion. Science 380, eadg0902 (2023). https://doi.org/10.1126/science.adg0902
  75. D. Buck, Ferroelectrics for Digital Information Storage and Switching (Massachusetts Institute of Technology, Cambridge Digital Computer Lab., Cambridge, 1952)
  76. D. Bondurant, Ferroelectronic ram memory family for critical data storage. Ferroelectrics 112, 273–282 (1990). https://doi.org/10.1080/00150199008008233
  77. C.-U. Pinnow, T. Mikolajick, Material aspects in emerging nonvolatile memories. J. Electrochem. Soc. 151, K13 (2004). https://doi.org/10.1149/1.1740785
  78. J.-M. Koo, B.-S. Seo, S. Kim, S. Shin, J.-H. Lee et al., Fabrication of 3D trench PZT capacitors for 256Mbit FRAM device application, in IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest (2005), pp. 340–343. https://doi.org/10.1109/IEDM.2005.1609345
  79. H.P. McAdams, R. Acklin, T. Blake, X.-H. Du, J. Eliason et al., A 64-Mb embedded FRAM utilizing a 130-nm 5LM Cu/FSG logic process. IEEE J. Solid State Circuits 39, 667–677 (2004). https://doi.org/10.1109/jssc.2004.825241
  80. D.A. Tenne, A. Bruchhausen, N.D. Lanzillotti-Kimura, A. Fainstein, R.S. Katiyar et al., Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy. Science 313, 1614–1616 (2006). https://doi.org/10.1126/science.1130306
  81. V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N.D. Mathur et al., Giant tunnel electroresistance for non-destructive readout of ferroelectric states. Nature 460, 81–84 (2009). https://doi.org/10.1038/nature08128
  82. J.L. Moll, Y. Tarui, A new solid state memory resistor. IEEE Trans. Electron Devices 10, 338 (1963). https://doi.org/10.1109/T-ED.1963.15245
  83. K. Sugibuchi, Y. Kurogi, N. Endo, Ferroelectric field-effect memory device using Bi4Ti3O12 film. J. Appl. Phys. 46, 2877–2881 (1975). https://doi.org/10.1063/1.322014
  84. K. Takahashi, K. Aizawa, B.-E. Park, H. Ishiwara, Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers. Jpn. J. Appl. Phys. 44, 6218 (2005). https://doi.org/10.1143/jjap.44.6218
  85. T. Kijima, H. Matsunaga, Preparation of Bi4Ti3O12 thin films by MOCVD method and electrical properties of metal/ferroelectric/insulator/semiconductor structure. Jpn. J. Appl. Phys. 38, 2281 (1999). https://doi.org/10.1143/jjap.38.2281
  86. S. Sakai, R. Ilangovan, Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance. IEEE Electron Device Lett. 25, 369–371 (2004). https://doi.org/10.1109/LED.2004.828992
  87. M. Si, A.K. Saha, S. Gao, G. Qiu, J. Qin et al., A ferroelectric semiconductor field-effect transistor. Nat. Electron. 2, 580–586 (2019). https://doi.org/10.1038/s41928-019-0338-7
  88. U. Schroeder, M.H. Park, T. Mikolajick, C.S. Hwang, The fundamentals and applications of ferroelectric HfO2. Nat. Rev. Mater. 7, 653–669 (2022). https://doi.org/10.1038/s41578-022-00431-2
  89. J. Park, T.-H. Kim, O. Kwon, M. Ismail, C. Mahata et al., Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM. Nano Energy 104, 107886 (2022). https://doi.org/10.1016/j.nanoen.2022.107886
  90. T.S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors, in 2011 International Electron Devices Meeting (IEEE, Washington, DC, USA, 2011), pp. 24.5.1–24.5.4
  91. S. Fujii, Y. Kamimuta, T. Ino, Y. Nakasaki, R. Takaishi et al., First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property, in 2016 IEEE Symposium on VLSI Technology (IEEE, Honolulu, HI, USA, 2016), pp. 1–2
  92. J. Okuno, T. Kunihiro, K. Konishi, H. Maemura, Y. Shuto et al., SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2, in 2020 IEEE Symposium on VLSI Technology (IEEE, Honolulu, HI, USA, 2020), pp. 1–2
  93. J. Yang, Q. Luo, X. Xue, H. Jiang, Q. Wu et al., A 9Mb HZO-based embedded FeRAM with 1012-cycle endurance and 5/7ns read/write using ECC-assisted data refresh and offset-canceled sense amplifier, in 2023 IEEE International Solid-State Circuits Conference (ISSCC) (IEEE, San Francisco, CA, USA, 2023), pp. 1–3
  94. M.H. Park, C.-C. Chung, T. Schenk, C. Richter, K. Opsomer et al., Effect of annealing ferroelectric HfO2 thin films: in situ, high temperature X-ray diffraction. Adv. Electron. Mater. 4, 1800091 (2018). https://doi.org/10.1002/aelm.201800091
  95. Y. Goh, J. Hwang, Y. Lee, M. Kim, S. Jeon, Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization. Appl. Phys. Lett. 117, 242901 (2020). https://doi.org/10.1063/5.0029516
  96. R. Materlik, C. Künneth, A. Kersch, The origin of ferroelectricity in Hf1–xZrxO2: a computational investigation and a surface energy model. J. Appl. Phys. 117, 134109 (2015). https://doi.org/10.1063/1.4916707
  97. Y. Wei, P. Nukala, M. Salverda, S. Matzen, H.J. Zhao et al., A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films. Nat. Mater. 17, 1095–1100 (2018). https://doi.org/10.1038/s41563-018-0196-0
  98. T. Mikolajick, S. Slesazeck, H. Mulaosmanovic, M.H. Park, S. Fichtner et al., Next generation ferroelectric materials for semiconductor process integration and their applications. J. Appl. Phys. 129, 100901 (2021). https://doi.org/10.1063/5.0037617
  99. S. Fichtner, N. Wolff, F. Lofink, L. Kienle, B. Wagner, AlScN: a III-V semiconductor based ferroelectric. J. Appl. Phys. 125, 114103 (2019). https://doi.org/10.1063/1.5084945
  100. K. Yazawa, A. Zakutayev, G.L. Brennecka, A Landau–Devonshire analysis of strain effects on ferroelectric Al1–xScxN. Appl. Phys. Lett. 121, 042902 (2022). https://doi.org/10.1063/5.0098979
  101. R. Mizutani, S. Yasuoka, T. Shiraishi, T. Shimizu, M. Uehara et al., Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm–2 around 10 nm in thickness. Appl. Phys. Express 14, 105501 (2021). https://doi.org/10.35848/1882-0786/ac2261
  102. D. Drury, K. Yazawa, A. Zakutayev, B. Hanrahan, G. Brennecka, High-temperature ferroelectric behavior of Al0.7Sc0.3N. Micromachines 13, 887 (2022). https://doi.org/10.3390/mi13060887
  103. W. Zhu, J. Hayden, F. He, J.-I. Yang, P. Tipsawat et al., Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films. Appl. Phys. Lett. 119, 062901 (2021). https://doi.org/10.1063/5.0057869
  104. D. Wang, P. Wang, S. Mondal, M. Hu, D. Wang et al., Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy. Appl. Phys. Lett. 122, 052101 (2023). https://doi.org/10.1063/5.0136265
  105. J.X. Zheng, M.M.A. Fiagbenu, G. Esteves, P. Musavigharavi, A. Gunda et al., Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness. Appl. Phys. Lett. 122, 222901 (2023). https://doi.org/10.1063/5.0147224
  106. G. Schönweger, N. Wolff, M.R. Islam, M. Gremmel, A. Petraru et al., In-grain ferroelectric switching in sub-5 nm thin Al0.74 Sc0.26 N films at 1 V. Adv. Sci. 10, e2302296 (2023). https://doi.org/10.1002/advs.202302296
  107. G. Schönweger, M.R. Islam, N. Wolff, A. Petraru, L. Kienle et al., Ultrathin Al1–xScxN for low-voltage-driven ferroelectric-based devices. Phys. Status Solidi RRL 17, 2200312 (2023). https://doi.org/10.1002/pssr.202200312
  108. W. Sun, J. Zhou, N. Liu, S. Zheng, X. Li et al., Integration of ferroelectric Al0.8Sc0.2N on Si (001) substrate. IEEE Electron Device Lett. 45, 574–577 (2024). https://doi.org/10.1109/LED.2024.3363724
  109. D. Wang, P. Wang, S. Mondal, S. Mohanty, T. Ma et al., An epitaxial ferroelectric ScAlN/GaN heterostructure memory. Adv. Electron. Mater. 8, 2200005 (2022). https://doi.org/10.1002/aelm.202200005
  110. N. Farrer, L. Bellaiche, Properties of hexagonal ScN versus wurtzite GaN and InN. Phys. Rev. B 66, 201203 (2002). https://doi.org/10.1103/physrevb.66.201203
  111. V. Ranjan, L. Bellaiche, E.J. Walter, Strained hexagonal ScN: a material with unusual structural and optical properties. Phys. Rev. Lett. 90, 257602 (2003). https://doi.org/10.1103/PhysRevLett.90.257602
  112. Y. Zhang, S. Wang, Y. Zhao, Y. Ding, Z. Zhang et al., Piezo-phototronic effect boosted catalysis in plasmonic bimetallic ZnO heterostructure with guided Fermi level alignment. Mater. Today Nano 18, 100177 (2022). https://doi.org/10.1016/j.mtnano.2022.100177
  113. W. Wu, Z.L. Wang, Piezotronics and piezo-phototronics for adaptive electronics and optoelectronics. Nat. Rev. Mater. 1, 16031 (2016). https://doi.org/10.1038/natrevmats.2016.31
  114. P. Wang, D. Wang, S. Mondal, Y. Wu, T. Ma et al., Interfacial modulated lattice-polarity-controlled epitaxy of III-nitride heterostructures on Si(111). ACS Appl. Mater. Interfaces 14, 15747–15755 (2022). https://doi.org/10.1021/acsami.1c23381
  115. P. Muralt, R.G. Polcawich, S. Trolier-McKinstry, Piezoelectric thin films for sensors, actuators, and energy harvesting. MRS Bull. 34, 658–664 (2009). https://doi.org/10.1557/mrs2009.177
  116. S. Zhang, D. Holec, W.Y. Fu, C.J. Humphreys, M.A. Moram, Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. J. Appl. Phys. 114, 133510 (2013). https://doi.org/10.1063/1.4824179
  117. J. Cai, N. Chen, Microscopic mechanism of the wurtzite-to-rocksalt phase transition of the group-III nitrides from first principles. Phys. Rev. B 75, 134109 (2007). https://doi.org/10.1103/physrevb.75.134109
  118. H. Vollstädt, E. Ito, M. Akaishi, S. Akimoto et al., High pressure synthesis of Rocksalt type of AlN. Proc. Jpn. Acad. B-Phys. 66(1), 7–9 (1990). https://doi.org/10.2183/pjab.66.7
  119. J. Zagorac, D. Zagorac, M. Rosić, J.C. Schön, B. Matović, Structure prediction of aluminum nitride combining data mining and quantum mechanics. CrystEngComm 19, 5259–5268 (2017). https://doi.org/10.1039/C7CE01039G
  120. M. Durandurdu, Pressure-induced phase transition in AlN: an ab initio molecular dynamics study. J. Alloys Compd. 480, 917–921 (2009). https://doi.org/10.1016/j.jallcom.2009.02.060
  121. A.M. Saitta, F. Decremps, Unifying description of the wurtzite-to-rocksalt phase transition in wide-gap semiconductors: the effect of d electrons on the elastic constants. Phys. Rev. B 70, 035214 (2004). https://doi.org/10.1103/physrevb.70.035214
  122. F. Tasnádi, B. Alling, C. Höglund, G. Wingqvist, J. Birch et al., Origin of the anomalous piezoelectric response in wurtzite ScxAl1–xN alloys. Phys. Rev. Lett. 104, 137601 (2010). https://doi.org/10.1103/PhysRevLett.104.137601
  123. H. Wang, N. Adamski, S. Mu, C.G. Van de Walle, Piezoelectric effect and polarization switching in Al1−xScxN. J. Appl. Phys. 130, 104101 (2021). https://doi.org/10.1063/5.0056485
  124. M. Akiyama, T. Kamohara, K. Kano, A. Teshigahara, Y. Takeuchi et al., Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering. Adv. Mater. 21, 593–596 (2009). https://doi.org/10.1002/adma.200802611
  125. T. Yanagitani, M. Suzuki, Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary. Appl. Phys. Lett. 105, 122907 (2014). https://doi.org/10.1063/1.4896262
  126. S. Yasuoka, T. Shimizu, A. Tateyama, M. Uehara, H. Yamada et al., Effects of deposition conditions on the ferroelectric properties of (Al1–xScx)N thin films. J. Appl. Phys. 128, 114103 (2020). https://doi.org/10.1063/5.0015281
  127. G. Schönweger, A. Petraru, M.R. Islam, N. Wolff, B. Haas et al., From fully strained to relaxed: epitaxial ferroelectric Al1-xScxN for III-N technology. Adv. Funct. Mater. 32, 2109632 (2022). https://doi.org/10.1002/adfm.202109632
  128. P. Wang, D. Wang, Y. Bi, B. Wang, J. Schwartz et al., Quaternary alloy ScAlGaN: a promising strategy to improve the quality of ScAlN. Appl. Phys. Lett. 120, 012104 (2022). https://doi.org/10.1063/5.0060608
  129. J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto et al., Epitaxial ScxAl1–xN on GaN exhibits attractive high-K dielectric properties. Appl. Phys. Lett. 120, 152901 (2022). https://doi.org/10.1063/5.0075636
  130. S.-L. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, T.-K. Chung et al., Publisher’s Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering.” Appl. Phys. Lett. 118, 082902 (2021). https://doi.org/10.1063/5.0035335
  131. K. Yazawa, D. Drury, A. Zakutayev, G.L. Brennecka, Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al0.7Sc0.3N. Appl. Phys. Lett. 118, 162903 (2021). https://doi.org/10.1063/5.0043613
  132. H. Moriwake, R. Yokoi, A. Taguchi, T. Ogawa, C.A.J. Fisher et al., A computational search for wurtzite-structured ferroelectrics with low coercive voltages. APL Mater. 8, 121102 (2020). https://doi.org/10.1063/5.0023626
  133. S. Yasuoka, R. Mizutani, R. Ota, T. Shiraishi, T. Shimizu et al., Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al, Sc)N films. J. Ceram. Soc. Japan 130, 436–441 (2022). https://doi.org/10.2109/jcersj2.21184
  134. S. Fichtner, F. Lofink, B. Wagner, G. Schönweger, T.-N. Kreutzer et al., Ferroelectricity in AlScN: switching, imprint and sub-150 nm films, in 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) (IEEE, Keystone, CO, USA, 2020), pp. 1–4
  135. S.K. Ryoo, K.D. Kim, H.W. Park, Y.B. Lee, S.H. Lee et al., Investigation of optimum deposition conditions of radio frequency reactive magnetron sputtering of Al0.7Sc0.3N film with thickness down to 20 nm. Adv. Electron. Mater. 8, 2200726 (2022). https://doi.org/10.1002/aelm.202200726
  136. S. Rassay, F. Hakim, C. Li, C. Forgey, N. Choudhary et al., A segmented-target sputtering process for growth of sub-50 nm ferroelectric scandium–aluminum–nitride films with composition and stress tuning. Phys. Status Solidi RRL 15, 2100087 (2021). https://doi.org/10.1002/pssr.202100087
  137. J. Wang, M. Park, A. Ansari, High-temperature acoustic and electric characterization of ferroelectric Al0.7Sc0.3N films. J. Microelectromech. Syst. 31, 234–240 (2022). https://doi.org/10.1109/JMEMS.2022.3147492
  138. V. Gund, B. Davaji, H. Lee, M.J. Asadi, J. Casamento et al., Temperature-dependent lowering of coercive field in 300 nm sputtered ferroelectric Al0.70Sc0.30N, in 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (IEEE, Sydney, Australia, 2021), pp. 1–3
  139. D. Drury, K. Yazawa, A. Mis, K. Talley, A. Zakutayev et al., Understanding reproducibility of sputter-deposited metastable ferroelectric wurtzite Al0.6Sc0.4N films using in situ optical emission spectrometry. Phys. Status Solidi RRL 15, 2100043 (2021). https://doi.org/10.1002/pssr.202100043
  140. P. Chandra, M. Dawber, P.B. Littlewood, J.F. Scott, Scaling of the coercive field with thickness in thin-film ferroelectrics. Ferroelectrics 313, 7–13 (2004). https://doi.org/10.1080/00150190490891157
  141. K.-H. Kim, I. Karpov, R.H. Olsson, D. Jariwala, Wurtzite and fluorite ferroelectric materials for electronic memory. Nat. Nanotechnol. 18, 422–441 (2023). https://doi.org/10.1038/s41565-023-01361-y
  142. H. Lu, G. Schönweger, A. Petraru, H. Kohlstedt, S. Fichtner et al., Domain dynamics and resistive switching in ferroelectric Al1–xScxN thin film capacitors. Adv. Funct. Mater. (2024). https://doi.org/10.1002/adfm.202315169
  143. D.H. Lee, Y. Lee, Y.H. Cho, H. Choi, S.H. Kim et al., Unveiled ferroelectricity in well-known non-ferroelectric materials and their semiconductor applications. Adv. Funct. Mater. 33, 2303956 (2023). https://doi.org/10.1002/adfm.202303956
  144. H. Huyan, L. Li, C. Addiego, W. Gao, X. Pan, Structures and electronic properties of domain walls in BiFeO3 thin films. Natl. Sci. Rev. 6, 669–683 (2019). https://doi.org/10.1093/nsr/nwz101
  145. X. Zhang, E.A. Stach, W.J. Meng, A.C. Meng, Nanoscale compositional segregation in epitaxial AlScN on Si (111). Nanoscale Horiz. 8, 674–684 (2023). https://doi.org/10.1039/d2nh00567k
  146. X. Zhang, W. Xu, W.J. Meng, A.C. Meng, Single crystal ferroelectric AlScN nanowires. CrystEngComm 26, 180–191 (2024). https://doi.org/10.1039/d3ce00990d
  147. K. Do Kim, Y.B. Lee, S.H. Lee, I.S. Lee, S.K. Ryoo et al., Evolution of the ferroelectric properties of AlScN film by electrical cycling with an inhomogeneous field distribution. Adv. Electron. Mater. 9, 2201142 (2023). https://doi.org/10.1002/aelm.202201142
  148. N. Wolff, S. Fichtner, B. Haas, M.R. Islam, F. Niekiel et al., Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN. J. Appl. Phys. 129, 034103 (2021). https://doi.org/10.1063/5.0033205
  149. P. Visconti, D. Huang, M.A. Reshchikov, F. Yun, R. Cingolani et al., Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques. Mater. Sci. Eng. B 93, 229–233 (2002). https://doi.org/10.1016/S0921-5107(02)00011-9
  150. D. Zhuang, J.H. Edgar, Wet etching of GaN, AlN, and SiC: a review. Mater. Sci. Eng. R. Rep. 48, 1–46 (2005). https://doi.org/10.1016/j.mser.2004.11.002
  151. S. Calderon 5th., J. Hayden, S.M. Baksa, W. Tzou, S. Trolier-McKinstry et al., Atomic-scale polarization switching in wurtzite ferroelectrics. Science 380, 1034–1038 (2023). https://doi.org/10.1126/science.adh7670
  152. J. Lao, M. Yan, B. Tian, C. Jiang, C. Luo et al., Ultralow-power machine vision with self-powered sensor reservoir. Adv. Sci. 9, e2106092 (2022). https://doi.org/10.1002/advs.202106092
  153. S.M. Rossnagel, Magnetron sputtering. J. Vac. Sci. Technol. A Vac. Surf. Films 38, 060805 (2020). https://doi.org/10.1116/6.0000594
  154. V. Yoshioka, J. Lu, Z. Tang, J. Jin, R.H. Olsson III. et al., Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al1−xScxN thin films. APL Mater. 9, 101104 (2021). https://doi.org/10.1063/5.0061787
  155. O. Ambacher, B. Christian, N. Feil, D. Urban, C. Elsässer et al., Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties. J. Appl. Phys. 130, 045102 (2021). https://doi.org/10.1063/5.0048647
  156. M. Akiyama, K. Kano, A. Teshigahara, Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films. Appl. Phys. Lett. 95, 162107 (2009). https://doi.org/10.1063/1.3251072
  157. S. Yasuoka, R. Mizutani, R. Ota, T. Shiraishi, T. Shimizu et al., Tunable ferroelectric properties in wurtzite (Al0.8Sc0.2)N via crystal anisotropy. ACS Appl. Electron. Mater. 4, 5165–5170 (2022). https://doi.org/10.1021/acsaelm.2c00999
  158. X. Liu, D. Wang, K.-H. Kim, K. Katti, J. Zheng et al., Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory. Nano Lett. 21, 3753–3761 (2021). https://doi.org/10.1021/acs.nanolett.0c05051
  159. P. Musavigharavi, A.C. Meng, D. Wang, J. Zheng, A.C. Foucher et al., Nanoscale structural and chemical properties of ferroelectric aluminum scandium nitride thin films. J. Phys. Chem. C 125, 14394–14400 (2021). https://doi.org/10.1021/acs.jpcc.1c01523
  160. X. Liu, J. Zheng, D. Wang, P. Musavigharavi, E.A. Stach et al., Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios. Appl. Phys. Lett. 118, 202901 (2021). https://doi.org/10.1063/5.0051940
  161. D. Wang, P. Musavigharavi, J. Zheng, G. Esteves, X. Liu et al., Sub-microsecond polarization switching in (Al, Sc)N ferroelectric capacitors grown on complementary metal–oxide–semiconductor-compatible aluminum electrodes. Phys. Status Solidi RRL 15, 2000575 (2021). https://doi.org/10.1002/pssr.202000575
  162. S. Satoh, K. Ohtaka, T. Shimatsu, S. Tanaka, Crystal structure deformation and phase transition of AlScN thin films in whole Sc concentration range. J. Appl. Phys. 132, 025103 (2022). https://doi.org/10.1063/5.0087505
  163. X. Liu, J. Ting, Y. He, M.M.A. Fiagbenu, J. Zheng et al., Reconfigurable compute-In-memory on field-programmable ferroelectric diodes. Nano Lett. 22, 7690–7698 (2022). https://doi.org/10.1021/acs.nanolett.2c03169
  164. S.R.C. McMitchell, A.M. Walke, K. Banerjee, S. Mertens, X. Piao et al., Engineering strain and texture in ferroelectric scandium-doped aluminium nitride. ACS Appl. Electron. Mater. 5, 858–864 (2023). https://doi.org/10.1021/acsaelm.2c01421
  165. S. Yasuoka, T. Shimizu, A. Tateyama, M. Uehara, H. Yamada et al., Impact of deposition temperature on crystal structure and ferroelectric properties of (Al1–xScx)N films prepared by sputtering method. Phys. Status Solidi A 218, 2100302 (2021). https://doi.org/10.1002/pssa.202170049
  166. D. Zhang, L. Jin, J. Li, T. Wen, C. Liu et al., MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties. J. Alloys Compd. 665, 131–136 (2016). https://doi.org/10.1016/j.jallcom.2016.01.038
  167. Z.-C. Zhang, Y. Li, J. Li, X.-D. Chen, B.-W. Yao et al., An ultrafast nonvolatile memory with low operation voltage for high-speed and low-power applications. Adv. Funct. Mater. 31, 2102571 (2021). https://doi.org/10.1002/adfm.202102571
  168. K. Frei, R. Trejo-Hernández, S. Schütt, L. Kirste, M. Prescher et al., Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE. Jpn. J. Appl. Phys. 58, SC1045 (2019). https://doi.org/10.7567/1347-4065/ab124f
  169. M.T. Hardy, E.N. Jin, N. Nepal, D.S. Katzer, B.P. Downey et al., Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy. Appl. Phys. Express 13, 065509 (2020). https://doi.org/10.35848/1882-0786/ab916a
  170. C. Yuan, M. Park, Y. Zheng, J. Shi, R. Dargis et al., Phonon heat conduction in Al1-xScxN thin films. Mater. Today Phys. 21, 100498 (2021). https://doi.org/10.1016/j.mtphys.2021.100498
  171. Y. Zheng, J. Wang, M. Park, P. Wang, D. Wang et al., High-order sezawa mode AlScN/GaN/sapphire surface acoustic wave resonators, in 2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS) (IEEE, Tokyo, Japan, 2022), pp. 1046–1049
  172. J. Casamento, C.S. Chang, Y.-T. Shao, J. Wright, D.A. Muller et al., Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy. Appl. Phys. Lett. 117, 112101 (2020). https://doi.org/10.1063/5.0013943
  173. M. Park, Z. Hao, R. Dargis, A. Clark, A. Ansari, Epitaxial aluminum scandium nitride super high frequency acoustic resonators. J. Microelectromech. Syst. 29, 490–498 (2020). https://doi.org/10.1109/JMEMS.2020.3001233
  174. P. Wang, D.A. Laleyan, A. Pandey, Y. Sun, Z. Mi, Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN. Appl. Phys. Lett. 116, 151903 (2020). https://doi.org/10.1063/5.0002445
  175. P. Wang, D. Wang, S. Mondal, Z. Mi, Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy. Appl. Phys. Lett. 121, 023501 (2022). https://doi.org/10.1063/5.0097117
  176. C. Manz, S. Leone, L. Kirste, J. Ligl, K. Frei et al., Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition. Semicond. Sci. Technol. 36, 034003 (2021). https://doi.org/10.1088/1361-6641/abd924
  177. S. Leone, J. Ligl, C. Manz, L. Kirste, T. Fuchs et al., Metal-organic chemical vapor deposition of aluminum scandium nitride. Phys. Status Solidi RRL 14, 1900535 (2020). https://doi.org/10.1002/pssr.201900535
  178. C. Liu, Q. Wang, W. Yang, T. Cao, L. Chen et al., Multiscale modeling of Al0.7Sc0.3N-based FeRAM: the steep switching, leakage and selector-free array, in 2021 IEEE International Electron Devices Meeting (IEDM) (IEEE, San Francisco, CA, USA, 2021), pp. 8.1.1–8.1.4
  179. N.D. Boscher, M. Wang, A. Perrotta, K. Heinze, M. Creatore et al., Metal-organic covalent network chemical vapor deposition for gas separation. Adv. Mater. 28, 7479–7485 (2016). https://doi.org/10.1002/adma.201601010
  180. J. Casamento, H. Lee, C.S. Chang, M.F. Besser, T. Maeda et al., Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1-xN/GaN heterostructures. APL Mater. 9, 091106 (2021). https://doi.org/10.1063/5.0054522
  181. L. Chen, C. Liu, M. Li, W. Song, W. Wang et al., Bipolar and unipolar cycling behavior in ferroelectric scandium-doped aluminum nitride, in 2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (IEEE, Tours, France, 2022), pp. 1–3
  182. B.-T. Lin, W.-H. Lee, J. Shieh, M.-J. Chen, Ferroelectric AlN ultrathin films prepared by atomic layer epitaxy, in SPIE Smart Structures + Nondestructive Evaluation. Proc SPIE 10968, Behavior and Mechanics of Multifunctional Materials XIII Denver, Colorado, USA, vol. 10968 (2019), pp. 287–293. https://doi.org/10.1117/12.2522119
  183. H.-Y. Shih, W.-H. Lee, W.-C. Kao, Y.-C. Chuang, R.-M. Lin et al., Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in situ atomic layer annealing. Sci. Rep. 7, 39717 (2017). https://doi.org/10.1038/srep39717
  184. R. Guido, T. Mikolajick, U. Schroeder, P.D. Lomenzo, Role of defects in the breakdown phenomenon of Al1-xScxN: from ferroelectric to filamentary resistive switching. Nano Lett. 23, 7213–7220 (2023). https://doi.org/10.1021/acs.nanolett.3c02351
  185. T. Schenk, M. Pešić, S. Slesazeck, U. Schroeder, T. Mikolajick, Memory technology-a primer for material scientists. Rep. Prog. Phys. 83, 086501 (2020). https://doi.org/10.1088/1361-6633/ab8f86
  186. C.-X. Xue, Y.-C. Chiu, T.-W. Liu, T.-Y. Huang, J.-S. Liu et al., A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices. Nat. Electron. 4, 81–90 (2021). https://doi.org/10.1038/s41928-020-00505-5
  187. M. Lanza, A. Sebastian, W.D. Lu, M. Le Gallo, M.F. Chang et al., Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science 376, eabj9979 (2022). https://doi.org/10.1126/science.abj9979
  188. S. Deng, Z. Zhao, S. Kurinec, K. Ni, Y. Xiao et al., Overview of ferroelectric memory devices and reliability aware design optimization, in Proceedings of the 2021 on Great Lakes Symposium on VLSI. June 22–25, 2021, Virtual Event, USA (ACM, 2021), pp. 473–478
  189. Z. Wang, W. Zhao, W. Kang, Y. Zhang, J.-O. Klein et al., Nonvolatile Boolean logic block based on ferroelectric tunnel memristor. IEEE Trans. Magn. 50, 9100604 (2014). https://doi.org/10.1109/TMAG.2014.2329774
  190. Z. Gao, W. Zhang, Q. Zhong, Y. Zheng, S. Lv et al., Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization. Device 1, 100004 (2023). https://doi.org/10.1016/j.device.2023.100004
  191. K.-H. Kim, S. Oh, M.M.A. Fiagbenu, J. Zheng, P. Musavigharavi et al., Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. Nat. Nanotechnol. 18, 1044–1050 (2023). https://doi.org/10.1038/s41565-023-01399-y
  192. X. Yin, X. Chen, M. Niemier, X.S. Hu, Ferroelectric FETs-based nonvolatile logic-in-memory circuits. IEEE Trans. Very Large Scale Integr. VLSI Syst. 27, 159–172 (2019). https://doi.org/10.1109/TVLSI.2018.2871119
  193. A. Sebastian, M. Le Gallo, R. Khaddam-Aljameh, E. Eleftheriou, Memory devices and applications for in-memory computing. Nat. Nanotechnol. 15, 529–544 (2020). https://doi.org/10.1038/s41565-020-0655-z
  194. R. Yang, In-memory computing with ferroelectrics. Nat. Electron. 3, 237–238 (2020). https://doi.org/10.1038/s41928-020-0411-2
  195. D. Ielmini, H.-S.P. Wong, In-memory computing with resistive switching devices. Nat. Electron. 1, 333–343 (2018). https://doi.org/10.1038/s41928-018-0092-2
  196. D. Wang, P. Wang, S. Mondal, M. Hu, Y. Wu et al., Ultrathin nitride ferroic memory with large ON/OFF ratios for analog in-memory computing. Adv. Mater. 35, e2210628 (2023). https://doi.org/10.1002/adma.202210628
  197. P. Wang, D. Wang, S. Mondal, M. Hu, Y. Wu et al., Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors. ACS Appl. Mater. Interfaces 15, 18022–18031 (2023). https://doi.org/10.1021/acsami.2c22798
  198. V. Gund, B. Davaji, H. Lee, J. Casamento, H.G. Xing et al., Towards realizing the low-coercive field operation of sputtered ferroelectric ScxAl1-xN, in 2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) (IEEE, Orlando, FL, USA, 2021), pp. 1064–1067
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 2346 Download : 1763