Issue

Vol. 16 (2024)

Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI3 Quantum Dot Light-Emitting Diodes

https://doi.org/10.1007/s40820-024-01321-8
Yanming Li
Laboratory of Advanced Nano‑Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, People’s Republic of China
Ming Deng
Laboratory of Advanced Nano‑Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, People’s Republic of China
Xuanyu Zhang
Laboratory of Advanced Nano‑Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, People’s Republic of China
Lei Qian
Laboratory of Advanced Nano‑Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, People’s Republic of China
Chaoyu Xiang
Laboratory of Advanced Nano‑Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, People’s Republic of China

Corresponding Author: Chaoyu Xiang

xiangchaoyu@nimte.ac.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 105

Abstract

CsPbI3 perovskite quantum dots (QDs) are ideal materials for the next generation of red light-emitting diodes. However, the low phase stability of CsPbI3 QDs and long-chain insulating capping ligands hinder the improvement of device performance. Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control. Here, we proposed a new ligand exchange strategy using a proton-prompted in-situ exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI3 QDs. This exchange strategy maintained the size and morphology of CsPbI3 QDs and improved the optical properties and the conductivity of CsPbI3 QDs films. As a result, high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45% and an operational half-life of 10.79 h.


Highlights:
1 A new proton-promoted in situ ligand exchange strategy based on CsPbI3 quantum dots.
2 The ligand exchange strategy maintains the quantum confinement effect of quantum dots and significantly improves the stability and photophysical properties of CsPbI3 quantum dots.
3 The performance of light-emitting diodes based on CsPbI3 quantum dots is significantly improved, the external quantum efficiency is increased from 18.63% to 24.45%, and the half-operational lifetime is increased by 70 times.

Keywords

CsPbI3 perovskite quantum dots Light-emitting diodes Ligand exchange Proton-prompted in-situ exchange
Li, Yanming, Ming Deng, Xuanyu Zhang, Lei Qian, and Chaoyu Xiang. 2024. “Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI3 Quantum Dot Light-Emitting Diodes”. Nano-Micro Letters 16 (February):105. https://doi.org/10.1007/s40820-024-01321-8.
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