Issue

Vol. 16 (2024)

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

https://doi.org/10.1007/s40820-023-01315-y
Zhaosu Liu
Institute of Molecular Plus, Tianjin University, Tianjin 300072, People’s Republic of China
Si Yin Tee
Institute of Materials Research and Engineering, A*STAR , Singapore 138634, Singapore
Guijian Guan
Institute of Molecular Plus, Tianjin University, Tianjin 300072, People’s Republic of China
Ming‑Yong Han
Institute of Molecular Plus, Tianjin University, Tianjin 300072, People’s Republic of China

Corresponding Author: Ming‑Yong Han

han_mingyong@tju.edu.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 95

Abstract

Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0–100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.


Highlights:
1 Atomically substitutional engineering in binary transition metal dichalcogenides (TMDs) enables the facile production of ternary or quaternary TMDs with tunable (opto)electronic properties spanning the entire compositional spectrum.
2 A comprehensive overview is provided on multinary TMDs, including Janus-type structures, aiming to elaborate on their theoretical foundations, synthetic strategies, tailored properties, and superior applications.
3 The challenges and opportunities faced in accelerating the exploitation of multinary TMDs as highly promising nanomaterials are discussed.

Keywords

Transition metal dichalcogenides Atomic substitution Tailored structure Tunable bandgap Enhanced applications
Liu, Zhaosu, Si Yin Tee, Guijian Guan, and Ming‑Yong Han. 2024. “Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications”. Nano-Micro Letters 16 (January):95. https://doi.org/10.1007/s40820-023-01315-y.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang et al., Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004). https://doi.org/10.1126/science.1102896
  2. Y. Gao, J. Chen, G. Chen, C. Fan, X. Liu, Recent progress in the transfer of graphene films and nanostructures. Small Methods 5, e2100771 (2021). https://doi.org/10.1002/smtd.202100771
  3. C. Tan, X. Cao, X.-J. Wu, Q. He, J. Yang et al., Recent advances in ultrathin two-dimensional nanomaterials. Chem. Rev. 117, 6225–6331 (2017). https://doi.org/10.1021/acs.chemrev.6b00558a
  4. Q. Zhang, X. Xiao, L. Li, D. Geng, W. Chen et al., Additive-assisted growth of scaled and quality 2D materials. Small 18, e2107241 (2022). https://doi.org/10.1002/smll.202107241
  5. W. Qian, S. Xu, X. Zhang, C. Li, W. Yang et al., Differences and similarities of photocatalysis and electrocatalysis in two-dimensional nanomaterials: strategies, traps, applications and challenges. Nano-Micro Lett. 13, 156 (2021). https://doi.org/10.1007/s40820-021-00681-9
  6. Z. Lyu, S. Ding, D. Du, K. Qiu, J. Liu et al., Recent advances in biomedical applications of 2D nanomaterials with peroxidase-like properties. Adv. Drug Deliv. Rev. 185, 114269 (2022). https://doi.org/10.1016/j.addr.2022.114269
  7. L. Cheng, X. Wang, F. Gong, T. Liu, Z. Liu, 2D nanomaterials for cancer theranostic applications. Adv. Mater. 32, e1902333 (2020). https://doi.org/10.1002/adma.201902333
  8. Y. Zhang, J. Mei, C. Yan, T. Liao, J. Bell et al., Bioinspired 2D nanomaterials for sustainable applications. Adv. Mater. 32, e1902806 (2020). https://doi.org/10.1002/adma.201902806
  9. M. Wang, J. Zhu, Y. Zi, Z.-G. Wu, H. Hu et al., Functional two-dimensional black phosphorus nanostructures towards next-generation devices. J. Mater. Chem. A 9, 12433–12473 (2021). https://doi.org/10.1039/D1TA02027G
  10. Z. Wei, B. Li, C. Xia, Y. Cui, J. He et al., Various structures of 2D transition-metal dichalcogenides and their applications. Small Method 2, 1800094 (2018). https://doi.org/10.1002/smtd.201800094
  11. S. Roy, X. Zhang, A.B. Puthirath, A. Meiyazhagan, S. Bhattacharyya et al., Structure, properties and applications of two-dimensional hexagonal boron nitride. Adv. Mater. 33, e2101589 (2021). https://doi.org/10.1002/adma.202101589
  12. H.Y. Hoh, Y. Zhang, Y.L. Zhong, Q. Bao, Harnessing the potential of graphitic carbon nitride for optoelectronic applications. Adv. Opt. Mater. 9, 2100146 (2021). https://doi.org/10.1002/adom.202100146
  13. W. Yu, K. Gong, Y. Li, B. Ding, L. Li et al., Flexible 2D materials beyond graphene: synthesis, properties, and applications. Small 18, e2105383 (2022). https://doi.org/10.1002/smll.202105383
  14. H. Tian, J. Tice, R. Fei, V. Tran, X. Yan et al., Low-symmetry two-dimensional materials for electronic and photonic applications. Nano Today 11, 763–777 (2016). https://doi.org/10.1016/j.nantod.2016.10.003
  15. R. Rajendran, L.K. Shrestha, K. Minami, M. Subramanian, R. Jayavel et al., Dimensionally integrated nanoarchitectonics for a novel composite from 0D, 1D, and 2D nanomaterials: RGO/CNT/CeO2 ternary nanocomposites with electrochemical performance. J. Mater. Chem. A 2, 18480–18487 (2014). https://doi.org/10.1039/C4TA03996C
  16. J. Mei, Y. Zhang, T. Liao, Z. Sun, S.X. Dou, Strategies for improving the lithium-storage performance of 2D nanomaterials. Natl. Sci. Rev. 5, 389–416 (2018). https://doi.org/10.1093/nsr/nwx077
  17. C. Murugan, V. Sharma, R.K. Murugan, G. Malaimegu, A. Sundaramurthy, Two-dimensional cancer theranostic nanomaterials: synthesis, surface functionalization and applications in photothermal therapy. J. Control. Release 299, 1–20 (2019). https://doi.org/10.1016/j.jconrel.2019.02.015
  18. W. Wen, Y. Song, X. Yan, C. Zhu, D. Du et al., Recent advances in emerging 2D nanomaterials for biosensing and bioimaging applications. Mater. Today 21, 164–177 (2018). https://doi.org/10.1016/j.mattod.2017.09.001
  19. G. Guan, M.-Y. Han, Functionalized hybridization of 2D nanomaterials. Adv. Sci. 6, 1901837 (2019). https://doi.org/10.1002/advs.201901837
  20. Y.-C. Lin, R. Torsi, D.B. Geohegan, J.A. Robinson, K. Xiao, Controllable thin-film approaches for doping and alloying transition metal dichalcogenides monolayers. Adv. Sci. 8, 2004249 (2021). https://doi.org/10.1002/advs.202004249
  21. R. Wang, Y. Yu, S. Zhou, H. Li, H. Wong et al., Strategies on phase control in transition metal dichalcogenides. Adv. Funct. Mater. 28, 1802473 (2018). https://doi.org/10.1002/adfm.201802473
  22. G. Guan, S. Zhang, S. Liu, Y. Cai, M. Low et al., Protein induces layer-by-layer exfoliation of transition metal dichalcogenides. J. Am. Chem. Soc. 137, 6152–6155 (2015). https://doi.org/10.1021/jacs.5b02780
  23. G. Guan, J. Xia, S. Liu, Y. Cheng, S. Bai et al., Electrostatic-driven exfoliation and hybridization of 2D nanomaterials. Adv. Mater. 29, 1700326 (2017). https://doi.org/10.1002/adma.201700326
  24. S. Li, Y. Ma, N.A.N. Ouedraogo, F. Liu, C. You et al., P-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices. Nano Res. 15, 123–144 (2022). https://doi.org/10.1007/s12274-021-3500-2
  25. L. Loh, Z. Zhang, M. Bosman, G. Eda, Substitutional doping in 2D transition metal dichalcogenides. Nano Res. 14, 1668–1681 (2021). https://doi.org/10.1007/s12274-020-3013-4
  26. Q. Lu, Y. Yu, Q. Ma, B. Chen, H. Zhang, 2D transition-metal-dichalcogenide-nanosheet-based composites for photocatalytic and electrocatalytic hydrogen evolution reactions. Adv. Mater. 28, 1917–1933 (2016). https://doi.org/10.1002/adma.201503270
  27. X. Huang, C. Tan, Z. Yin, H. Zhang, 25th anniversary : hybrid nanostructures based on two-dimensional nanomaterials. Adv. Mater. 26, 2185–2204 (2014). https://doi.org/10.1002/adma.201304964
  28. Y. Zhao, K. Xu, F. Pan, C. Zhou, F. Zhou et al., Doping, contact and interface engineering of two-dimensional layered transition metal dichalcogenides transistors. Adv. Funct. Mater. 27, 1603484 (2017). https://doi.org/10.1002/adfm.201603484
  29. Q. Wang, Y. Lei, Y. Wang, Y. Liu, C. Song et al., Atomic-scale engineering of chemical-vapor-deposition-grown 2D transition metal dichalcogenides for electrocatalysis. Energy Environ. Sci. 13, 1593–1616 (2020). https://doi.org/10.1039/D0EE00450B
  30. S. Chen, D. Huang, M. Cheng, L. Lei, Y. Chen et al., Surface and interface engineering of two-dimensional bismuth-based photocatalysts for ambient molecule activation. J. Mater. Chem. A 9, 196–233 (2021). https://doi.org/10.1039/D0TA08165E
  31. X. Gan, D. Lei, R. Ye, H. Zhao, K.-Y. Wong, Transition metal dichalcogenide-based mixed-dimensional heterostructures for visible-light-driven photocatalysis: dimensionality and interface engineering. Nano Res. 14, 2003–2022 (2021). https://doi.org/10.1007/s12274-020-2955-x
  32. W. Choi, N. Choudhary, G.H. Han, J. Park, D. Akinwande et al., Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater. Today 20, 116–130 (2017). https://doi.org/10.1016/j.mattod.2016.10.002
  33. J. Zhou, J. Lin, X. Huang, Y. Zhou, Y. Chen et al., A library of atomically thin metal chalcogenides. Nature 556, 355–359 (2018). https://doi.org/10.1038/s41586-018-0008-3
  34. X. Xi, Z. Wang, W. Zhao, J.-H. Park, K.T. Law et al., Ising pairing in superconducting NbSe2 atomiclayers. Nat. Phys. 12, 139–143 (2016). https://doi.org/10.1038/nphys3538
  35. Y. Qi, P.G. Naumov, M.N. Ali, C.R. Rajamathi, W. Schnelle et al., Superconductivity in weyl semimetal candidate MoTe2. Nat. Commun. 7, 11038 (2016). https://doi.org/10.1038/ncomms11038
  36. E. Navarro-Moratalla, J.O. Island, S. Mañas-Valero, E. Pinilla-Cienfuegos, A. Castellanos-Gomez et al., Enhanced superconductivity in atomically thin TaS2. Nat. Commun. 7, 11043 (2016). https://doi.org/10.1038/ncomms11043
  37. X. Qian, J. Liu, L. Fu, J. Li, Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344–1347 (2014). https://doi.org/10.1126/science.1256815
  38. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012). https://doi.org/10.1038/nnano.2012.193
  39. Y. Xiao, M. Zhou, J. Liu, J. Xu, L. Fu, Phase engineering of two-dimensional transition metal dichalcogenides. Sci. China Mater. 62, 759–775 (2019). https://doi.org/10.1007/s40843-018-9398-1
  40. X. Yuan, M. Yang, L. Wang, Y. Li, Structural stability and intriguing electronic properties of two-dimensional transition metal dichalcogenide alloys. Phys. Chem. Chem. Phys. 19, 13846–13854 (2017). https://doi.org/10.1039/C7CP01727H
  41. C. Gao, X. Yang, M. Jiang, L. Chen, Z. Chen et al., Machine learning-enabled band gap prediction of monolayer transition metal chalcogenide alloys. Phys. Chem. Chem. Phys. 24, 4653–4665 (2022). https://doi.org/10.1039/d1cp05847a
  42. Z. Shi, Q. Zhang, U. Schwingenschlögl, Alloying as a route to monolayer transition metal dichalcogenides with improved optoelectronic performance: Mo(S1–xSex)2 and Mo1–yWyS2. ACS Appl. Energy Mater. 1, 2208–2214 (2018). https://doi.org/10.1021/acsaem.8b00288
  43. M. Chen, L. Zhu, Q. Chen, N. Miao, C. Si et al., Quantifying the composition dependency of the ground-state structure, electronic property and phase-transition dynamics in ternary transition-metal-dichalcogenide monolayers. J. Mater. Chem. C 8, 721–733 (2020). https://doi.org/10.1039/C9TC05487A
  44. H. Li, X. Duan, X. Wu, X. Zhuang, H. Zhou et al., Growth of alloy MoS2xSe2(1–x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc. 136, 3756–3759 (2014). https://doi.org/10.1021/ja500069b
  45. Q. Deng, X. Li, H. Si, J. Hong, S. Wang et al., Strong band bowing effects and distinctive optoelectronic properties of 2H and 1T’ phase-tunable MoxRe1–xS2 alloys. Adv. Funct. Mater. 30, 2003264 (2020). https://doi.org/10.1002/adfm.202003264
  46. X. Duan, C. Wang, Z. Fan, G. Hao, L. Kou et al., Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties. Nano Lett. 16, 264–269 (2016). https://doi.org/10.1021/acs.nanolett.5b03662
  47. V. Kochat, A. Apte, J.A. Hachtel, H. Kumazoe, A. Krishnamoorthy et al., Re doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv. Mater. 29, 1703754 (2017). https://doi.org/10.1002/adma.201703754
  48. P. Yu, J. Lin, L. Sun, Q.L. Le, X. Yu et al., Metal-semiconductor phase-transition in WSe2(1–x)Te2x monolayer. Adv. Mater. 29, 1603991 (2017). https://doi.org/10.1002/adma.201603991
  49. Y. Deng, P. Li, C. Zhu, J. Zhou, X. Wang et al., Controlled synthesis of MoxW1−xTe2 atomic layers with emergent quantum states. ACS Nano 15, 11526–11534 (2021). https://doi.org/10.1021/acsnano.1c01441
  50. A.-Y. Lu, H. Zhu, J. Xiao, C.-P. Chuu, Y. Han et al., Janus monolayers of transition metal dichalcogenides. Nat. Nanotechnol. 12, 744–749 (2017). https://doi.org/10.1038/nnano.2017.100
  51. J. Zhang, S. Jia, I. Kholmanov, L. Dong, D. Er et al., Janus monolayer transition-metal dichalcogenides. ACS Nano 11, 8192–8198 (2017). https://doi.org/10.1021/acsnano.7b03186
  52. H. Mo, X. Zhang, Y. Liu, P. Kang, H. Nan et al., Two-dimensional alloying molybdenum tin disulfide monolayers with fast photoresponse. ACS Appl. Mater. Interfaces 11, 39077–39087 (2019). https://doi.org/10.1021/acsami.9b13645
  53. C. Tan, Z. Luo, A. Chaturvedi, Y. Cai, Y. Du et al., Preparation of high-percentage 1T-phase transition metal dichalcogenide nanodots for electrochemical hydrogen evolution. Adv. Mater. 30, 1705509 (2018). https://doi.org/10.1002/adma.201705509
  54. I.S. Kwon, I.H. Kwak, T.T. Debela, J.Y. Kim, S.J. Yoo et al., Phase-transition Mo1−xVxSe2 alloy nanosheets with rich V-Se vacancies and their enhanced catalytic performance of hydrogen evolution reaction. ACS Nano 15, 14672–14682 (2021). https://doi.org/10.1021/acsnano.1c04453
  55. I.H. Kwak, I.S. Kwon, T.T. Debela, H.G. Abbas, Y.C. Park et al., Phase evolution of Re1−xMoxSe2 alloy nanosheets and their enhanced catalytic activity toward hydrogen evolution reaction. ACS Nano 14, 11995–12005 (2020). https://doi.org/10.1021/acsnano.0c05159
  56. X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang et al., Monolayer WxMo1−xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors. Adv. Funct. Mater. 27, 1606469 (2017). https://doi.org/10.1002/adfm.201606469
  57. G. Shao, X.-X. Xue, B. Wu, Y.-C. Lin, M. Ouzounian et al., Template-assisted synthesis of metallic 1T’-Sn0.3W0.7S2 nanosheets for hydrogen evolution reaction. Adv. Funct. Mater. 30, 1906069 (2020). https://doi.org/10.1002/adfm.201906069
  58. X. Li, M.-W. Lin, L. Basile, S.M. Hus, A.A. Puretzky et al., Isoelectronic tungsten doping in monolayer MoSe2 for carrier type modulation. Adv. Mater. 28, 8240–8247 (2016). https://doi.org/10.1002/adma.201601991
  59. Q. Fu, L. Yang, W. Wang, A. Han, J. Huang et al., Synthesis and enhanced electrochemical catalytic performance of monolayer WS2(1−x)Se2x with a tunable band gap. Adv. Mater. 27, 4732–4738 (2015). https://doi.org/10.1002/adma.201500368
  60. W.-J. Yin, H.-J. Tan, P.-J. Ding, B. Wen, X.-B. Li et al., Recent advances in low-dimensional Janus materials: theoretical and simulation perspectives. Mater. Adv. 2, 7543–7558 (2021). https://doi.org/10.1039/D1MA00660F
  61. F. Raffone, C. Ataca, J.C. Grossman, G. Cicero, MoS2 enhanced T-phase stabilization and tunability through alloying. J. Phys. Chem. Lett. 7, 2304–2309 (2016). https://doi.org/10.1021/acs.jpclett.6b00794
  62. X. Zhou, L. Gan, W. Tian, Q. Zhang, S. Jin et al., Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors. Adv. Mater. 27, 8035–8041 (2015). https://doi.org/10.1002/adma.201503873
  63. Y. Huang, H.-X. Deng, K. Xu, Z.-X. Wang, Q.-S. Wang et al., Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets. Nanoscale 7, 14093–14099 (2015). https://doi.org/10.1039/C5NR04174K
  64. P. Perumal, R.K. Ulaganathan, R. Sankar, Y.-M. Liao, T.-M. Sun et al., Ultra-thin layered ternary single crystals [Sn(SxSe1–x)2] with bandgap engineering for high performance phototransistors on versatile substrates. Adv. Funct. Mater. 26, 3630–3638 (2016). https://doi.org/10.1002/adfm.201600081
  65. A. Kutana, E.S. Penev, B.I. Yakobson, Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying. Nanoscale 6, 5820–5825 (2014). https://doi.org/10.1039/C4NR00177J
  66. J. Kang, S. Tongay, J. Li, J. Wu, Monolayer semiconducting transition metal dichalcogenide alloys: stability and band bowing. J. Appl. Phys. 113, 143703 (2013). https://doi.org/10.1063/1.4799126
  67. H.-P. Komsa, A.V. Krasheninnikov, Two-dimensional transition metal dichalcogenide alloys: stability and electronic properties. J. Phys. Chem. Lett. 3, 3652–3656 (2012). https://doi.org/10.1021/jz301673x
  68. Z. Hemmat, J. Cavin, A. Ahmadiparidari, A. Ruckel, S. Rastegar et al., Quasi-binary transition metal dichalcogenide alloys: thermodynamic stability prediction, scalable synthesis, and application. Adv. Mater. 32, e1907041 (2020). https://doi.org/10.1002/adma.201907041
  69. J.-H. Yang, B.I. Yakobson, Unusual negative formation enthalpies and atomic ordering in isovalent alloys of transition metal dichalcogenide monolayers. Chem. Mater. 30, 1547–1555 (2018). https://doi.org/10.1021/acs.chemmater.7b04527
  70. M.C. Troparevsky, J.R. Morris, M. Daene, Y. Wang, A.R. Lupini et al., Beyond atomic sizes and hume-rothery rules: understanding and predicting high-entropy alloys. JOM 67, 2350–2363 (2015). https://doi.org/10.1007/s11837-015-1594-2
  71. H. Taghinejad, D.A. Rehn, C. Muccianti, A.A. Eftekhar, M. Tian et al., Defect-mediated alloying of monolayer transition-metal dichalcogenides. ACS Nano 12, 12795–12804 (2018). https://doi.org/10.1021/acsnano.8b07920
  72. W. Yao, Z. Kang, J. Deng, Y. Chen, Q. Song et al., Synthesis of 2D MoS2(1–x)Se2x semiconductor alloy by chemical vapor deposition. RSC Adv. 10, 42172–42177 (2020). https://doi.org/10.1039/d0ra07776c
  73. Y. Tsai, Z. Chu, Y. Han, C.-P. Chuu, D. Wu et al., Tailoring semiconductor lateral multijunctions for giant photoconductivity enhancement. Adv. Mater. 29, 1703680 (2017). https://doi.org/10.1002/adma.201703680
  74. B. Tang, J. Zhou, P. Sun, X. Wang, L. Bai et al., Phase-controlled synthesis of monolayer ternary telluride with a random local displacement of tellurium atoms. Adv. Mater. 31, e1900862 (2019). https://doi.org/10.1002/adma.201900862
  75. J. Cavin, A. Ahmadiparidari, L. Majidi, A.S. Thind, S.N. Misal et al., 2D high-entropy transition metal dichalcogenides for carbon dioxide electrocatalysis. Adv. Mater. 33, e2100347 (2021). https://doi.org/10.1002/adma.202100347
  76. Y. Chen, Z. Tian, X. Wang, N. Ran, C. Wang et al., 2D transition metal dichalcogenide with increased entropy for piezoelectric electronics. Adv. Mater. 34, e2201630 (2022). https://doi.org/10.1002/adma.202201630
  77. J. Lin, J. Zhou, S. Zuluaga, P. Yu, M. Gu et al., Anisotropic ordering in 1T’ molybdenum and tungsten ditelluride layers alloyed with sulfur and selenium. ACS Nano 12, 894–901 (2018). https://doi.org/10.1021/acsnano.7b08782
  78. D.O. Dumcenco, H. Kobayashi, Z. Liu, Y.-S. Huang, K. Suenaga, Visualization and quantification of transition metal atomic mixing in Mo1−xWxS2 single layers. Nat. Commun. 4, 1351 (2013). https://doi.org/10.1038/ncomms2351
  79. S. Susarla, P. Manimunda, Y.M. Jaques, J.A. Hachtel, J.C. Idrobo et al., Strain-induced structural deformation study of 2D MoxW(1–x)S2. Adv. Mater. Interfaces 6, 1801262 (2019). https://doi.org/10.1002/admi.201801262
  80. C. Tan, W. Zhao, A. Chaturvedi, Z. Fei, Z. Zeng et al., Preparation of single-layer MoS2xSe2(1–x) and MoxW1-xS2 nanosheets with high-concentration metallic 1T phase. Small 12, 1866–1874 (2016). https://doi.org/10.1002/smll.201600014
  81. D. Hu, G. Xu, L. Xing, X. Yan, J. Wang et al., Two-dimensional semiconductors grown by chemical vapor transport. Angew. Chem. Int. Ed. 56, 3611–3615 (2017). https://doi.org/10.1002/anie.201700439
  82. G.H. Han, D.L. Duong, D.H. Keum, S.J. Yun, Y.H. Lee, Van der waals metallic transition metal dichalcogenides. Chem. Rev. 118, 6297–6336 (2018). https://doi.org/10.1021/acs.chemrev.7b00618
  83. Q. Gong, L. Cheng, C. Liu, M. Zhang, Q. Feng et al., Ultrathin MoS2(1–x)Se2x alloy nanoflakes for electrocatalytic hydrogen evolution reaction. ACS Catal. 5, 2213–2219 (2015). https://doi.org/10.1021/cs501970w
  84. Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan et al., Growth of large-area 2D MoS2(1–x)Se2x semiconductor alloys. Adv. Mater. 26, 2648–2653 (2014). https://doi.org/10.1002/adma.201306095
  85. Z. Zheng, J. Yao, G. Yang, Centimeter-scale deposition of Mo0.5W0.5Se2 alloy film for high-performance photodetectors on versatile substrates. ACS Appl. Mater. Interfaces 9, 14920–14928 (2017). https://doi.org/10.1021/acsami.7b02166
  86. L. Zhang, T. Yang, X. He, W. Zhang, G. Vinai et al., Molecular beam epitaxy of two-dimensional vanadium-molybdenum diselenide alloys. ACS Nano 14, 11140–11149 (2020). https://doi.org/10.1021/acsnano.0c02124
  87. X. Hu, Z. Hemmat, L. Majidi, J. Cavin, R. Mishra et al., Controlling nanoscale thermal expansion of monolayer transition metal dichalcogenides by alloy engineering. Small 16, e1905892 (2020). https://doi.org/10.1002/smll.201905892
  88. G.K. Solanki, D.N. Gujarathi, M.P. Deshpande, D. Lakshminarayana, M.K. Agarwal, Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique. Cryst. Res. Technol. 43, 179–185 (2008). https://doi.org/10.1002/crat.200711060
  89. S.D. Karande, N. Kaushik, D.S. Narang, D. Late, S. Lodha, Thickness tunable transport in alloyed WSSe field effect transistors. Appl. Phys. Lett. 109, 142101 (2016). https://doi.org/10.1063/1.4964289
  90. F.I. Alzakia, S.C. Tan, Liquid-exfoliated 2D materials for optoelectronic applications. Adv. Sci. 8, e2003864 (2021). https://doi.org/10.1002/advs.202003864
  91. S. Witomska, T. Leydecker, A. Ciesielski, P. Samorì, Production and patterning of liquid phase–exfoliated 2D sheets for applications in optoelectronics. Adv. Funct. Mater. 29, 1901126 (2019). https://doi.org/10.1002/adfm.201901126
  92. Z. Yang, H. Liang, X. Wang, X. Ma, T. Zhang et al., Atom-thin SnS2-xSex with adjustable compositions by direct liquid exfoliation from single crystals. ACS Nano 10, 755–762 (2016). https://doi.org/10.1021/acsnano.5b05823
  93. I.S. Kwon, I.H. Kwak, J.Y. Kim, T.T. Debela, Y.C. Park et al., Concurrent vacancy and adatom defects of Mo1-xNbxSe2 alloy nanosheets enhance electrochemical performance of hydrogen evolution reaction. ACS Nano 15, 5467–5477 (2021). https://doi.org/10.1021/acsnano.1c00171
  94. I.H. Kwak, T.T. Debela, I.S. Kwon, J. Seo, S.J. Yoo et al., Anisotropic alloying of Re1−xMoxS2 nanosheets to boost the electrochemical hydrogen evolution reaction. J. Mater. Chem. A 8, 25131–25141 (2020). https://doi.org/10.1039/D0TA09299A
  95. W. Zhang, X. Li, T. Jiang, J. Song, Y. Lin et al., CVD synthesis of Mo(1–x)WxS2 and MoS2(1–x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide. Nanoscale 7, 13554–13560 (2015). https://doi.org/10.1039/c5nr02515j
  96. Z. Cai, B. Liu, X. Zou, H.-M. Cheng, Chemical vapor deposition growth and applications of two-dimensional materials and their heterostructures. Chem. Rev. 118, 6091–6133 (2018). https://doi.org/10.1021/acs.chemrev.7b00536
  97. L. Tang, J. Tan, H. Nong, B. Liu, H.-M. Cheng, Chemical vapor deposition growth of two-dimensional compound materials: controllability, material quality, and growth mechanism. Acc. Mater. Res. 2, 36–47 (2021). https://doi.org/10.1021/accountsmr.0c00063
  98. L. Fang, S. Tao, Z. Tian, K. Liu, X. Li et al., Controlled growth of transition metal dichalcogenide via thermogravimetric prediction of precursors vapor concentration. Nano Res. 14, 2867–2874 (2021). https://doi.org/10.1007/s12274-021-3347-6
  99. F. Chen, L. Wang, X. Ji, Q. Zhang, Temperature-dependent two-dimensional transition metal dichalcogenide heterostructures: controlled synthesis and their properties. ACS Appl. Mater. Interfaces 9, 30821–30831 (2017). https://doi.org/10.1021/acsami.7b08313
  100. S. Susarla, V. Kochat, A. Kutana, J.A. Hachtel, J.C. Idrobo et al., Phase segregation behavior of two-dimensional transition metal dichalcogenide binary alloys induced by dissimilar substitution. Chem. Mater. 29, 7431–7439 (2017). https://doi.org/10.1021/acs.chemmater.7b02407
  101. D.B. Trivedi, G. Turgut, Y. Qin, M.Y. Sayyad, D. Hajra et al., Room-temperature synthesis of 2D Janus crystals and their heterostructures. Adv. Mater. 32, e2006320 (2020). https://doi.org/10.1002/adma.202006320
  102. S.J. Yun, G.H. Han, H. Kim, D.L. Duong, B.G. Shin et al., Telluriding monolayer MoS2 and WS2 via alkali metal scooter. Nat. Commun. 8, 2163 (2017). https://doi.org/10.1038/s41467-017-02238-0
  103. G. Xue, X. Sui, P. Yin, Z. Zhou, X. Li et al., Modularized batch production of 12-inch transition metal dichalcogenides by local element supply. Sci. Bull. 68, 1514–1521 (2023). https://doi.org/10.1016/j.scib.2023.06.037
  104. Y. Zuo, C. Liu, L. Ding, R. Qiao, J. Tian et al., Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply. Nat. Commun. 13, 1007 (2022). https://doi.org/10.1038/s41467-022-28628-7
  105. Z. Ye, C. Tan, X. Huang, Y. Ouyang, L. Yang et al., Emerging MoS2 wafer-scale technique for integrated circuits. Nano-Micro Lett. 15, 38 (2023). https://doi.org/10.1007/s40820-022-01010-4
  106. J. Lee, S. Pak, Y.W. Lee, Y. Park, A.R. Jang et al., Direct epitaxial synthesis of selective two-dimensional lateral heterostructures. ACS Nano 13, 13047–13055 (2019). https://doi.org/10.1021/acsnano.9b05722
  107. X. Zhang, S. Xiao, L. Shi, H. Nan, X. Wan et al., Large-size Mo1-xWxS2 and W1-xMoxS2 (x = 0–0.5) monolayers by confined-space chemical vapor deposition. Appl. Surf. Sci. 457, 591–597 (2018). https://doi.org/10.1016/j.apsusc.2018.06.299
  108. K. Ding, Q. Fu, H. Nan, X. Gu, K. Ostrikov et al., Controllable synthesis of WS2(1–x)Se2x monolayers with fast photoresponse by a facile chemical vapor deposition strategy. Mater. Sci. Eng. B 269, 115176 (2021). https://doi.org/10.1016/j.mseb.2021.115176
  109. P. Kang, H. Nan, X. Zhang, H. Mo, Z. Ni et al., Controllable synthesis of crystalline ReS2(1–x)Se2x monolayers on amorphous SiO2/Si substrates with fast photoresponse. Adv. Opt. Mater. 8, 1901415 (2020). https://doi.org/10.1002/adom.201901415
  110. Q. Feng, N. Mao, J. Wu, H. Xu, C. Wang et al., Growth of MoS2(1–x)Se2x (x = 0.41–1.00) monolayer alloys with controlled morphology by physical vapor deposition. ACS Nano 9, 7450–7455 (2015). https://doi.org/10.1021/acsnano.5b02506
  111. M.N. Bui, S. Rost, M. Auge, J.-S. Tu, L. Zhou et al., Low-energy Se ion implantation in MoS2 monolayers. NPJ 2D Mater. Appl. 6, 42 (2022). https://doi.org/10.1038/s41699-022-00318-4
  112. S. Prucnal, A. Hashemi, M. Ghorbani-Asl, R. Hübner, J. Duan et al., Chlorine doping of MoSe2 flakes by ion implantation. Nanoscale 13, 5834–5846 (2021). https://doi.org/10.1039/D0NR08935D
  113. Q. Ma, M. Isarraraz, C.S. Wang, E. Preciado, V. Klee et al., Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange. ACS Nano 8, 4672–4677 (2014). https://doi.org/10.1021/nn5004327
  114. M. Ghorbani-Asl, S. Kretschmer, D.E. Spearot, A.V. Krasheninnikov, Two-dimensional MoS2 under ion irradiation: from controlled defect production to electronic structure engineering. 2D Mater. 4, 025078 (2017). https://doi.org/10.1088/2053-1583/aa6b17
  115. X. Kong, L. Liang, Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides. 2D Mater. 9, 025005 (2022). https://doi.org/10.1088/2053-1583/ac4957
  116. J. Yao, Z. Zheng, G. Yang, Promoting the performance of layered-material photodetectors by alloy engineering. ACS Appl. Mater. Interfaces 8, 12915–12924 (2016). https://doi.org/10.1021/acsami.6b03691
  117. J.G. Song, G.H. Ryu, S.J. Lee, S. Sim, C.W. Lee et al., Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer. Nat. Commun. 6, 7817 (2015). https://doi.org/10.1038/ncomms8817
  118. H.H. Huang, X. Fan, D.J. Singh, W.T. Zheng, Recent progress of TMD nanomaterials: phase transitions and applications. Nanoscale 12, 1247–1268 (2020). https://doi.org/10.1039/c9nr08313h
  119. D. Voiry, A. Mohite, M. Chhowalla, Phase engineering of transition metal dichalcogenides. Chem. Soc. Rev. 44, 2702–2712 (2015). https://doi.org/10.1039/c5cs00151j
  120. S.-Z. Yang, Y. Gong, P. Manchanda, Y.-Y. Zhang, G. Ye et al., Rhenium-doped and stabilized MoS2 atomic layers with basal-plane catalytic activity. Adv. Mater. 30, e1803477 (2018). https://doi.org/10.1002/adma.201803477
  121. I.S. Kwon, I.H. Kwak, G.M. Zewdie, S.J. Lee, J.Y. Kim et al., WSe2-VSe2 alloyed nanosheets to enhance the catalytic performance of hydrogen evolution reaction. ACS Nano 16, 12569–12579 (2022). https://doi.org/10.1021/acsnano.2c04113
  122. K. Yang, X. Wang, H. Li, B. Chen, X. Zhang et al., Composition- and phase-controlled synthesis and applications of alloyed phase heterostructures of transition metal disulphides. Nanoscale 9, 5102–5109 (2017). https://doi.org/10.1039/c7nr01015j
  123. Z. Wang, Y. Shen, Y. Ito, Y. Zhang, J. Du et al., Synthesizing 1T–1H two-phase Mo1-xWxS2 monolayers by chemical vapor deposition. ACS Nano 12, 1571–1579 (2018). https://doi.org/10.1021/acsnano.7b08149
  124. Z. Wang, X. Zhao, Y. Yang, L. Qiao, L. Lv et al., Phase-controlled synthesis of monolayer W1–xRexS2 alloy with improved photoresponse performance. Small 16, e2000852 (2020). https://doi.org/10.1002/smll.202000852
  125. Y.-C. Lin, D.O. Dumcenco, Y.-S. Huang, K. Suenaga, Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2. Nat. Nanotechnol. 9, 391–396 (2014). https://doi.org/10.1038/nnano.2014.64
  126. I.H. Kwak, I.S. Kwon, G.M. Zewdie, T.T. Debela, S.J. Lee et al., Polytypic phase transition of Nb1- xVxSe2 via colloidal synthesis and their catalytic activity toward hydrogen evolution reaction. ACS Nano 16, 4278–4288 (2022). https://doi.org/10.1021/acsnano.1c10301
  127. K.Y. Ko, S. Lee, K. Park, Y. Kim, W.J. Woo et al., High-performance gas sensor using a large-area WS2xSe2-2x alloy for low-power operation wearable applications. ACS Appl. Mater. Interfaces 10, 34163–34171 (2018). https://doi.org/10.1021/acsami.8b10455
  128. Y. Chen, J. Xi, D.O. Dumcenco, Z. Liu, K. Suenaga et al., Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 7, 4610–4616 (2013). https://doi.org/10.1021/nn401420h
  129. M. Zhang, J. Wu, Y. Zhu, D.O. Dumcenco, J. Hong et al., Two-dimensional molybdenum tungsten diselenide alloys: photoluminescence, Raman scattering, and electrical transport. ACS Nano 8, 7130–7137 (2014). https://doi.org/10.1021/nn5020566
  130. F. Cui, Q. Feng, J. Hong, R. Wang, Y. Bai et al., Synthesis of large-size 1T’ ReS2xSe2(1–x) alloy monolayer with tunable bandgap and carrier type. Adv. Mater. 29, 1705015 (2017). https://doi.org/10.1002/adma.201705015
  131. J. Kim, H. Seung, D. Kang, J. Kim, H. Bae et al., Wafer-scale production of transition metal dichalcogenides and alloy monolayers by nanocrystal conversion for large-scale ultrathin flexible electronics. Nano Lett. 21, 9153–9163 (2021). https://doi.org/10.1021/acs.nanolett.1c02991
  132. Y.-R. Lin, W.-H. Cheng, M.H. Richter, J.S. DuChene, E.A. Peterson et al., Band edge tailoring in few-layer two-dimensional molybdenum sulfide/selenide alloys. J. Phys. Chem. C 124, 22893–22902 (2020). https://doi.org/10.1021/acs.jpcc.0c04719
  133. N. Tit, I.M. Obaidat, H. Alawadhi, Origins of bandgap bowing in compound-semiconductor common-cation ternary alloys. J. Phys. Condens. Matter 21, 075802 (2009). https://doi.org/10.1088/0953-8984/21/7/075802
  134. L. Yang, Q. Fu, W. Wang, J. Huang, J. Huang et al., Large-area synthesis of monolayered MoS2(1–x)Se2x with a tunable band gap and its enhanced electrochemical catalytic activity. Nanoscale 7, 10490–10497 (2015). https://doi.org/10.1039/c5nr02652k
  135. F. Liang, H. Xu, Z. Dong, Y. Xie, C. Luo et al., Substrates and interlayer coupling effects on Mo1–xWxSe2 alloys. J. Semicond. 40, 062005 (2019). https://doi.org/10.1088/1674-4926/40/6/062005
  136. H. Masenda, L.M. Schneider, M. Adel Aly, S.J. Machchhar, A. Usman et al., Energy scaling of compositional disorder in ternary transition-metal dichalcogenide monolayers. Adv. Electron. Mater. 7, 2100196 (2021). https://doi.org/10.1002/aelm.202100196
  137. B. Aslan, I.M. Datye, M.J. Mleczko, K. Sze Cheung, S. Krylyuk et al., Probing the optical properties and strain-tuning of ultrathin Mo1−xWxTe2. Nano Lett. 18, 2485–2491 (2018). https://doi.org/10.1021/acs.nanolett.8b00049
  138. W. Zheng, B. Zheng, C. Yan, Y. Liu, X. Sun et al., Direct vapor growth of 2D vertical heterostructures with tunable band alignments and interfacial charge transfer behaviors. Adv. Sci. 6, 1802204 (2019). https://doi.org/10.1002/advs.201802204
  139. J. Wu, L. Xie, Structural quantification for graphene and related two-dimensional materials by Raman spectroscopy. Anal. Chem. 91, 468–481 (2019). https://doi.org/10.1021/acs.analchem.8b04991
  140. X. Zhang, X.-F. Qiao, W. Shi, J.-B. Wu, D.-S. Jiang et al., Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 44, 2757–2785 (2015). https://doi.org/10.1039/c4cs00282b
  141. C. Ramkumar, K.P. Jain, S.C. Abbi, Resonant Raman scattering probe of alloying effect in GaAs1-xPx ternary alloy semiconductors. Phys. Rev. B Condens. Matter 54, 7921–7928 (1996). https://doi.org/10.1103/physrevb.54.7921
  142. Y. Chen, D.O. Dumcenco, Y. Zhu, X. Zhang, N. Mao et al., Composition-dependent Raman modes of Mo1−xWxS2 monolayer alloys. Nanoscale 6, 2833–2839 (2014). https://doi.org/10.1039/C3NR05630A
  143. X. Gan, R. Lv, X. Wang, Z. Zhang, K. Fujisawa et al., Pyrolytic carbon supported alloying metal dichalcogenides as free-standing electrodes for efficient hydrogen evolution. Carbon 132, 512–519 (2018). https://doi.org/10.1016/j.carbon.2018.02.025
  144. Y. Sun, K. Fujisawa, Z. Lin, Y. Lei, J.S. Mondschein et al., Low-temperature solution synthesis of transition metal dichalcogenide alloys with tunable optical properties. J. Am. Chem. Soc. 139, 11096–11105 (2017). https://doi.org/10.1021/jacs.7b04443
  145. D. Wang, X. Zhang, G. Guo, S. Gao, X. Li et al., Large-area synthesis of layered HfS2(1–x)Se2x alloys with fully tunable chemical compositions and bandgaps. Adv. Mater. 30, e1803285 (2018). https://doi.org/10.1002/adma.201803285
  146. A. Apte, A. Krishnamoorthy, J.A. Hachtel, S. Susarla, J.C. Idrobo et al., Telluride-based atomically thin layers of ternary two-dimensional transition metal dichalcogenide alloys. Chem. Mater. 30, 7262–7268 (2018). https://doi.org/10.1021/acs.chemmater.8b03444
  147. A.T. Barton, R. Yue, L.A. Walsh, G. Zhou, C. Cormier et al., WSe(2–x)Tex alloys grown by molecular beam epitaxy. 2D Mater. 6, 045027 (2019). https://doi.org/10.1088/2053-1583/ab334d
  148. Q. Fu, J. Han, X. Wang, P. Xu, T. Yao et al., 2D transition metal dichalcogenides: design, modulation, and challenges in electrocatalysis. Adv. Mater. 33, e1907818 (2021). https://doi.org/10.1002/adma.201907818
  149. A.K. Chanchal, Garg, MREI-model calculations of optical phonons in layered mixed crystals of 2H-polytype of the series SnS2–xSex (0⩽x⩽2). Phys. B Condens. Matter 383, 188–193 (2006). https://doi.org/10.1016/j.physb.2006.03.009
  150. Y. Chen, W. Shockley, G.L. Pearson, Lattice vibration spectra of GaAsxP1-x single crystals. Phys. Rev. 151, 648–656 (1966). https://doi.org/10.1103/PhysRev.151.648
  151. I.F. Chang, S.S. Mitra, Application of a modified random-element-isodisplacement model to long-wavelength optic phonons of mixed crystals. Phys. Rev. 172, 924–933 (1968). https://doi.org/10.1103/physrev.172.924
  152. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011). https://doi.org/10.1038/nnano.2010.279
  153. A.R. Kim, Y. Kim, J. Nam, H.S. Chung, D.J. Kim et al., Alloyed 2D metal-semiconductor atomic layer junctions. Nano Lett. 16, 1890–1895 (2016). https://doi.org/10.1021/acs.nanolett.5b05036
  154. A. Sebastian, R. Pendurthi, T.H. Choudhury, J.M. Redwing, S. Das, Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 12, 693 (2021). https://doi.org/10.1038/s41467-020-20732-w
  155. B. Liu, Y. Ma, A. Zhang, L. Chen, A.N. Abbas et al., High-performance WSe2 field-effect transistors via controlled formation of In-plane heterojunctions. ACS Nano 10, 5153–5160 (2016). https://doi.org/10.1021/acsnano.6b00527
  156. H. Zhou, C. Wang, J.C. Shaw, R. Cheng, Y. Chen et al., Large area growth and electrical properties of p-type WSe2 atomic layers. Nano Lett. 15, 709–713 (2015). https://doi.org/10.1021/nl504256y
  157. K. Xu, A. Sharma, S. Kang, J. Kang, X. Hu et al., Heterogeneous electronic and photonic devices based on monolayer ternary telluride core/shell structures. Adv. Mater. 33, e2100343 (2021). https://doi.org/10.1002/adma.202100343
  158. K.-C. Chen, C.-Y. Jian, Y.-J. Chen, S.-C. Lee, S.-W. Chang et al., Current enhancement and bipolar current modulation of top-gate transistors based on monolayer MoS2 on three-layer WxMo1−xS2. ACS Appl. Mater. Interfaces 10, 24733–24738 (2018). https://doi.org/10.1021/acsami.8b06327
  159. V.T. Vu, T.T.H. Vu, T.L. Phan, W.T. Kang, Y.R. Kim et al., One-step synthesis of NbSe2/Nb-doped-WSe2 metal/doped-semiconductor van der waals heterostructures for doping controlled ohmic contact. ACS Nano 15, 13031–13040 (2021). https://doi.org/10.1021/acsnano.1c02038
  160. W. Zhou, X. Zou, S. Najmaei, Z. Liu, Y. Shi et al., Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 13, 2615–2622 (2013). https://doi.org/10.1021/nl4007479
  161. H. Tian, M.L. Chin, S. Najmaei, Q. Guo, F. Xia et al., Optoelectronic devices based on two-dimensional transition metal dichalcogenides. Nano Res. 9, 1543–1560 (2016). https://doi.org/10.1007/s12274-016-1034-9
  162. H. Qiu, T. Xu, Z. Wang, W. Ren, H. Nan et al., Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 4, 2642 (2013). https://doi.org/10.1038/ncomms3642
  163. Y.R. Lim, J.K. Han, Y. Yoon, J.B. Lee, C. Jeon et al., Atomic-level customization of 4 in transition metal dichalcogenide multilayer alloys for industrial applications. Adv. Mater. 31, e1901405 (2019). https://doi.org/10.1002/adma.201901405
  164. H. Xu, J. Zhu, G. Zou, W. Liu, X. Li et al., Spatially bandgap-graded MoS2(1–x)Se2x homojunctions for self-powered visible-near-infrared phototransistors. Nano-Micro Lett. 12, 26 (2020). https://doi.org/10.1007/s40820-019-0361-2
  165. P. Chauhan, G.K. Solanki, A.B. Patel, K. Patel, P. Pataniya et al., Tunable and anisotropic photoresponse of layered Re0.2Sn0.8Se2 ternary alloy. Sol. Energy Mater. Sol. Cells 200, 109936 (2019). https://doi.org/10.1016/j.solmat.2019.109936
  166. J. Ye, K. Liao, X. Ge, Z. Wang, Y. Wang et al., Narrowing bandgap of HfS2 by Te substitution for short-wavelength infrared photodetection. Adv. Opt. Mater. 9, 2002248 (2021). https://doi.org/10.1002/adom.202002248
  167. T.F. Jaramillo, K.P. Jørgensen, J. Bonde, J.H. Nielsen, S. Horch et al., Identification of active edge sites for electrochemical H2 evolution from MoS2 nanocatalysts. Science 317, 100–102 (2007). https://doi.org/10.1126/science.1141483
  168. W. Xu, S. Li, S. Zhou, J.K. Lee, S. Wang et al., Large dendritic monolayer MoS2 grown by atmospheric pressure chemical vapor deposition for electrocatalysis. ACS Appl. Mater. Interfaces 10, 4630–4639 (2018). https://doi.org/10.1021/acsami.7b14861
  169. Z. Lai, A. Chaturvedi, Y. Wang, T.H. Tran, X. Liu et al., Preparation of 1T’-phase ReS2xSe2(1–x) (x = 0–1) nanodots for highly efficient electrocatalytic hydrogen evolution reaction. J. Am. Chem. Soc. 140, 8563–8568 (2018). https://doi.org/10.1021/jacs.8b04513
  170. Y. Lei, S. Pakhira, K. Fujisawa, X. Wang, O.O. Iyiola et al., Low-temperature synthesis of heterostructures of transition metal dichalcogenide alloys (WxMo1-xS2) and graphene with superior catalytic performance for hydrogen evolution. ACS Nano 11, 5103–5112 (2017). https://doi.org/10.1021/acsnano.7b02060
  171. J. Xu, X. Li, W. Liu, Y. Sun, Z. Ju et al., Carbon dioxide electroreduction into syngas boosted by a partially delocalized charge in molybdenum sulfide selenide alloy monolayers. Angew. Chem. Int. Ed. 56, 9121–9125 (2017). https://doi.org/10.1002/anie.201704928
  172. G. Shao, Y. Lu, J. Hong, X.-X. Xue, J. Huang et al., Seamlessly splicing metallic SnxMo1−xS2 at MoS2 edge for enhanced photoelectrocatalytic performance in microreactor. Adv. Sci. 7, 2002172 (2020). https://doi.org/10.1002/advs.202002172
  173. F. Li, W. Wei, H. Wang, B. Huang, Y. Dai et al., Intrinsic electric field-induced properties in Janus MoSSe van der waals structures. J. Phys. Chem. Lett. 10, 559–565 (2019). https://doi.org/10.1021/acs.jpclett.8b03463
  174. T. Zheng, Y.-C. Lin, Y. Yu, P. Valencia-Acuna, A.A. Puretzky et al., Excitonic dynamics in Janus MoSSe and WSSe monolayers. Nano Lett. 21, 931–937 (2021). https://doi.org/10.1021/acs.nanolett.0c03412
  175. H. Cai, Y. Guo, H. Gao, W. Guo, Tribo-piezoelectricity in Janus transition metal dichalcogenide bilayers: a first-principles study. Nano Energy 56, 33–39 (2019). https://doi.org/10.1016/j.nanoen.2018.11.027
  176. C. Zhang, Y. Nie, S. Sanvito, A. Du, First-principles prediction of a room-temperature ferromagnetic Janus VSSe monolayer with piezoelectricity, ferroelasticity, and large valley polarization. Nano Lett. 19, 1366–1370 (2019). https://doi.org/10.1021/acs.nanolett.8b05050
  177. J. Liang, W. Wang, H. Du, A. Hallal, K. Garcia et al., Very large Dzyaloshinskii-Moriya interaction in two-dimensional Janus manganese dichalcogenides and its application to realize skyrmion states. Phys. Rev. B 101, 184401 (2020). https://doi.org/10.1103/physrevb.101.184401
  178. A.C. Riis-Jensen, T. Deilmann, T. Olsen, K.S. Thygesen, Classifying the electronic and optical properties of Janus monolayers. ACS Nano 13, 13354–13364 (2019). https://doi.org/10.1021/acsnano.9b06698
  179. S. Haastrup, M. Strange, M. Pandey, T. Deilmann, P.S. Schmidt et al., The computational 2D materials database: high-throughput modeling and discovery of atomically thin crystals. 2D Mater. 5, 042002 (2018). https://doi.org/10.1088/2053-1583/aacfc1
  180. M.N. Gjerding, A. Taghizadeh, A. Rasmussen, S. Ali, F. Bertoldo et al., Recent progress of the computational 2D materials database (C2DB). 2D Mater. 8, 044002 (2021). https://doi.org/10.1088/2053-1583/ac1059
  181. S. Zhang, X. Wang, Y. Wang, H. Zhang, B. Huang et al., Electronic properties of defective Janus MoSSe monolayer. J. Phys. Chem. Lett. 13, 4807–4814 (2022). https://doi.org/10.1021/acs.jpclett.2c01195
  182. Y.-C. Lin, C. Liu, Y. Yu, E. Zarkadoula, M. Yoon et al., Low energy implantation into transition-metal dichalcogenide monolayers to form Janus structures. ACS Nano 14, 3896–3906 (2020). https://doi.org/10.1021/acsnano.9b10196
  183. X. Wan, E. Chen, J. Yao, M. Gao, X. Miao et al., Synthesis and characterization of metallic Janus MoSH monolayer. ACS Nano 15, 20319–20331 (2021). https://doi.org/10.1021/acsnano.1c08531
  184. C.-H. Yeh, Computational study of Janus transition metal dichalcogenide monolayers for acetone gas sensing. ACS Omega 5, 31398–31406 (2020). https://doi.org/10.1021/acsomega.0c04938
  185. S. Jia, A. Bandyopadhyay, H. Kumar, J. Zhang, W. Wang et al., Biomolecular sensing by surface-enhanced Raman scattering of monolayer Janus transition metal dichalcogenide. Nanoscale 12, 10723–10729 (2020). https://doi.org/10.1039/D0NR00300J
  186. W.-J. Yin, B. Wen, G.-Z. Nie, X.-L. Wei, L.-M. Liu, Tunable dipole and carrier mobility for a few layer Janus MoSSe structure. J. Mater. Chem. C 6, 1693–1700 (2018). https://doi.org/10.1039/C7TC05225A
  187. M. Idrees, H.U. Din, R. Ali, G. Rehman, T. Hussain et al., Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures. Phys. Chem. Chem. Phys. 21, 18612–18621 (2019). https://doi.org/10.1039/C9CP02648G
  188. S. Susarla, A. Kutana, J.A. Hachtel, V. Kochat, A. Apte et al., Quaternary 2D transition metal dichalcogenides (TMDs) with tunable bandgap. Adv. Mater. 29, 1702457 (2017). https://doi.org/10.1002/adma.201702457
  189. C.-Z. Ning, L. Dou, P. Yang, Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions. Nat. Rev. Mater. 2, 17070 (2017). https://doi.org/10.1038/natrevmats.2017.70
  190. I.S. Kwon, S.J. Lee, J.Y. Kim, I.H. Kwak, G.M. Zewdie et al., Composition-tuned (MoWV)Se2 ternary alloy nanosheets as excellent hydrogen evolution reaction electrocatalysts. ACS Nano 17, 2968–2979 (2023). https://doi.org/10.1021/acsnano.2c11528
  191. T. Joseph, M. Ghorbani-Asl, A.G. Kvashnin, K.V. Larionov, Z.I. Popov et al., Nonstoichiometric phases of two-dimensional transition-metal dichalcogenides: from chalcogen vacancies to pure metal membranes. J. Phys. Chem. Lett. 10, 6492–6498 (2019). https://doi.org/10.1021/acs.jpclett.9b02529
  192. Z. Wang, R. Li, C. Su, K.P. Loh, Intercalated phases of transition metal dichalcogenides. SmartMat 1, e1013 (2020). https://doi.org/10.1002/smm2.1013
  193. B. An, Y. Ma, F. Chu, X. Li, Y. Wu et al., Growth of centimeter scale Nb1−xWxSe2 monolayer film by promoter assisted liquid phase chemical vapor deposition. Nano Res. 15, 2608–2615 (2022). https://doi.org/10.1007/s12274-021-3825-x
  194. S. Park, S.J. Yun, Y.I. Kim, J.H. Kim, Y.M. Kim et al., Tailoring domain morphology in monolayer NbSe2 and WxNb1−xSe2 heterostructure. ACS Nano 14, 8784–8792 (2020). https://doi.org/10.1021/acsnano.0c03382
  195. X. Li, F. Cui, Q. Feng, G. Wang, X. Xu et al., Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application. Nanoscale 8, 18956–18962 (2016). https://doi.org/10.1039/C6NR07233J
  196. F. Cui, X. Li, Q. Feng, J. Yin, L. Zhou et al., Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer. Nano Res. 10, 2732–2742 (2017). https://doi.org/10.1007/s12274-017-1477-7
  197. G. Song, S. Cong, Z. Zhao, Defect engineering in semiconductor-based SERS. Chem. Sci. 13, 1210–1224 (2021). https://doi.org/10.1039/d1sc05940h
  198. S.G. Yi, S.H. Kim, S. Park, D. Oh, H.Y. Choi et al., Mo1-xWxSe2-based Schottky junction photovoltaic cells. ACS Appl. Mater. Interfaces 8, 33811–33820 (2016). https://doi.org/10.1021/acsami.6b11768
  199. K.C. Kwon, T.H. Lee, S. Choi, K.S. Choi, S.O. Gim et al., Synthesis of atomically thin alloyed molybdenum-tungsten disulfides thin films as hole transport layers in organic light-emitting diodes. Appl. Surf. Sci. 541, 148529 (2021). https://doi.org/10.1016/j.apsusc.2020.148529
  200. R. Yang, L. Liu, S. Feng, Y. Liu, S. Li et al., One-step growth of spatially graded Mo1−xWxS2 monolayers with a wide span in composition (from x = 0 to 1) at a large scale. ACS Appl. Mater. Interfaces 11, 20979–20986 (2019). https://doi.org/10.1021/acsami.9b03608
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 2508 Download : 1883