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Vol. 16 (2024)

Correction to: Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

https://doi.org/10.1007/s40820-023-01270-8
Tao Yang
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China
Yan‑Hui Chen
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China
Ya‑Chao Wang
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China
Wei Ou
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China
Lei‑Ying Ying
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China
Yang Mei
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China
Ai‑Qin Tian
Suzhou Institute of Nano‑Tech and Nano‑Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, People’s Republic of China
Jian‑Ping Liu
Suzhou Institute of Nano‑Tech and Nano‑Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, People’s Republic of China
Hao‑Chung Kuo
Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, People’s Republic of China
Bao‑Ping Zhang
Laboratory of Micro/Nano‑Optoelectronics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, People’s Republic of China

Corresponding Author: Bao‑Ping Zhang

bzhang@xmu.edu.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 61

Abstract

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm−2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.


Highlights:
1 Continuous-wave green vertical-cavity surface-emitting lasers based on self-formed quantum dots were realized with the lowest threshold current density of 51.97 A cm−2.
2 A short cavity (~4.0 λ, where λ is the wavelength in the media) was adopted to enhance the interaction between spontaneous emission and lasing mode, with a big coupling factor up to 0.094.
3 AlN current confinement layer and the electroplated supporting copper plate were utilized to improve heat dissipation, with a low thermal resistance of 842 K W−1.

Keywords

Green vertical cavity surface emitting laser GaN Low threshold InGaN quantum dots
Yang, Tao, Yan‑Hui Chen, Ya‑Chao Wang, Wei Ou, Lei‑Ying Ying, Yang Mei, Ai‑Qin Tian, Jian‑Ping Liu, Hao‑Chung Kuo, and Bao‑Ping Zhang. 2023. “Correction To: Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity”. Nano-Micro Letters 16 (December):61. https://doi.org/10.1007/s40820-023-01270-8.
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