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Vol. 15 (2023)

Ultrafine Vacancy-Rich Nb2O5 Semiconductors Confined in Carbon Nanosheets Boost Dielectric Polarization for High-Attenuation Microwave Absorption

https://doi.org/10.1007/s40820-023-01151-0
Zhe Su
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
Shan Yi
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
Wanyu Zhang
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
Xiaxi Xu
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
Yayun Zhang
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
Shenghu Zhou
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
Bo Niu
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
http://orcid.org/0000-0003-4126-6246
Donghui Long
Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, People’s Republic of China
http://orcid.org/0000-0002-3179-4822

Corresponding Author: Donghui Long

longdh@mail.ecust.edu.cn

Nano-Micro Letters, Vol. 15 (2023), Article Number: 183

Abstract

The integration of nano-semiconductors into electromagnetic wave absorption materials is a highly desirable strategy for intensifying dielectric polarization loss; achieving high-attenuation microwave absorption and realizing in-depth comprehension of dielectric loss mechanisms remain challenges. Herein, ultrafine oxygen vacancy-rich Nb2O5 semiconductors are confined in carbon nanosheets (ov-Nb2O5/CNS) to boost dielectric polarization and achieve high attenuation. The polarization relaxation, electromagnetic response, and impedance matching of the ov-Nb2O5/CNS are significantly facilitated by the Nb2O5 semiconductors with rich oxygen vacancies, which consequently realizes an extremely high attenuation performance of − 80.8 dB (> 99.999999% wave absorption) at 2.76 mm. As a dielectric polarization center, abundant Nb2O5–carbon heterointerfaces can intensify interfacial polarization loss to strengthen dielectric polarization, and the presence of oxygen vacancies endows Nb2O5 semiconductors with abundant charge separation sites to reinforce electric dipole polarization. Moreover, the three-dimensional reconstruction of the absorber using microcomputer tomography technology provides insight into the intensification of the unique lamellar morphology regarding multiple reflection and scattering dissipation characteristics. Additionally, ov-Nb2O5/CNS demonstrates excellent application potential by curing into a microwave-absorbing, machinable, and heat-dissipating plate. This work provides insight into the dielectric polarization loss mechanisms of nano-semiconductor/carbon composites and inspires the design of high-performance microwave absorption materials.


Highlights:
1 Ultrafine oxygen-vacancy-rich Nb2O5 semiconductors have been incorporated into carbon nanosheets for high-attenuation microwave absorption (−80.8 dB, > 99.999999% wave absorption).
2 Nb2O5 semiconductors with abundant oxygen vacancies significantly facilitate polarization relaxation, electromagnetic response, dipole polarization, and interfacial polarization.
3 Multiple reflections and scattering dissipation are enhanced by the unique 2D lamellar morphology.

Keywords

Electromagnetic wave absorption Nb2O5 semiconductor Dielectric polarization loss Oxygen vacancy Nb2O5– carbon hetero-interface
Su, Zhe, Shan Yi, Wanyu Zhang, Xiaxi Xu, Yayun Zhang, Shenghu Zhou, Bo Niu, and Donghui Long. 2023. “Ultrafine Vacancy-Rich Nb2O5 Semiconductors Confined in Carbon Nanosheets Boost Dielectric Polarization for High-Attenuation Microwave Absorption”. Nano-Micro Letters 15 (July):183. https://doi.org/10.1007/s40820-023-01151-0.
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