Issue

Vol. 15 (2023)

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

https://doi.org/10.1007/s40820-022-01001-5
Minjong Lee
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
Tae Wook Kim
Center for Opto‑Electronic Materials and Devices, Post‑Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
Chang Yong Park
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
Kimoon Lee
Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea
Takashi Taniguchi
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305‑0044, Japan
Kenji Watanabe
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305‑0044, Japan
Min‑gu Kim
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
Do Kyung Hwang
Center for Opto‑Electronic Materials and Devices, Post‑Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
Young Tack Lee
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea

Corresponding Author: Young Tack Lee

ytlee@inha.ac.kr

Nano-Micro Letters, Vol. 15 (2023), Article Number: 22

Abstract

Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.


Highlights:


1 Graphene (Gr)-bridge heterostructure, consisting of a laterally series-connected (cascade) ambipolar/Gr/n-type 2D van der Waals channel materials for ambipolar semiconductor-based high-end application devices was developed.
2 Non-classical transfer characteristics (humped curve) in FET operation and negative differential transconductances were observed.
3 Gr-bridge heterostructure device with PdSe2 (narrow bandgap) allows multi-value logic operation while WSe2 (wide bandgap) enables frequency tripler circuit operation.

Keywords

Graphene bridge Heterostructure device Non-classical transfer characteristics Multi-value logic inverter Frequency tripler
Lee, Minjong, Tae Wook Kim, Chang Yong Park, Kimoon Lee, Takashi Taniguchi, Kenji Watanabe, Min‑gu Kim, Do Kyung Hwang, and Young Tack Lee. 2022. “Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications”. Nano-Micro Letters 15 (December):22. https://doi.org/10.1007/s40820-022-01001-5.
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