The model developed for stress-induced structural phase transformations of micro-crystalline silicon films
Corresponding Author: Jen-Fin Lin
Nano-Micro Letters,
Vol. 2 No. 2 (2010), Article Number: 68-73
Abstract
The nanoindentations were applied to island-shaped regions with metal-induced Si crystallizations. The experimental stress-strain relationship is obtained from the load-depth profile in order to investigate the critical stresses arising at various phase transitions. The stress and strain values at various indentation depths are applied to determine the Gibbs free energy at various phases. The intersections of the Gibbs free energy lines are used to determine the possible paths of phase transitions arising at various indentation depths. All the critical contact stresses corresponding to the various phase transitions at four annealing temperatures were found to be consistent with the experimental results.
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- A. A. Volinsky, N. R. Moody and W. W. Gerberich, Acta. Mater. 50, 441 (2002). doi:10.1016/S1359- 6454(01)00354-8
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- S. R. Kalidindi and S. Pathak, Acta. Mater. 56, 3523 (2008). doi:10.1016/j.actamat.2008.03.036
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References
A. A. Volinsky, N. R. Moody and W. W. Gerberich, Acta. Mater. 50, 441 (2002). doi:10.1016/S1359- 6454(01)00354-8
W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992). doi:10.1557/JMR.1992.1564
M. Sakai, Acta. Metal. Mater. 41, 1751 (1993). doi:10.1016/0956-7151(93)90194-W
S. Suresh and A. E. Giannakopoulos, Scripta Mater. 40, 1191 (1999). doi:10.1016/S1359-6462(99)0001 1-1
B. Taljat, T. Zacharia and F. Kosel, Int. J. Solids Struct. 35, 4411 (1998). doi:10.1016/S0020-768 3(97)00249-7
J. S. Field and M. V. Swain, J. Mater. Res. 8, 297 (1993). doi:10.1557/JMR.1993.0297
A. C. Fischer-Cripps, Nanoindentation, Springer, New York (2004).
T. F. Page, G.M. Pharr, J. C. Hay, W. C. Oliver, B. N. Lucas, E. Herbert and L. Riester, MRS Symp. Proc. 522, 53 (1998).
P. J. Wei and J. F. Lin, Surf. Coat. Tech. 200, 2489 (2005). doi:10.1016/j.surfcoat.2004.09.013
T. Tsuru and Y. Shibutani, Phys. Rev. B 75, 035415 (2007).doi:10.1103/PhysRevB.75.035415
J. K. Mason, A. C. Lund and C. A. Schuh, Phys. Rev. B 73, 054102 (2006). doi:10.1103/PhysRev B.73.054102
A. Makagon, M. Kachanov, S. V. Kalinin and E. Karapetian, Phys. Rev. B 76, 064115 (2007). doi:10.1103/PhysRevB.76.064115
Z. C. Pan, H. Sun and C. F. Chen, Phys. Rev. B 79, 104102 (2009). doi:10.1103/PhysRevB.79.104102
K. A. Dahmen, Y. Ben-Zion and J. T. Uhl, Phys. Rev. Lett. 102, 175501 (2009). doi:10.1103/Phy sRevLett.102.175501
C. Kearney, Z. Zhao, B. J. F. Bruet, R. Radovitzky, M. C. Boyce and C. Ortiz, Phys. Rev. Lett. 96, 255505 (2006). doi:10.1103/PhysRevLett.96.25 5505
Y. T. Cheng, W. Y. Ni and C. M. Cheng, Phys. Rev. Lett. 97, 075506 (2006). doi:10.1103/PhysRevLe tt.97.075506
A. Knoll, D. Wiesmann, B. Gotsmann and U. Duerig, Phys. Rev. Lett. 102, 117801 (2009). doi:10.1103/PhysRevLett.102.117801
M. Lucas, A. M. Leach, M. T. McDowell, S. E. Hunyadi, K. Gall, C. J. Murphy and E. Riedo, Phys. Rev. B 77, 245420 (2008). doi:10.1103/PhysRevB.77.245420
S. K. Deb, M. Wilding, M. Somayazulu and P. F. McMillan, Nature 414, 528 (2001). doi:10.1038/35107036
S. H. Tolbert, A. B. Herhold, L. E. Brus and A. P. Alivisatos, Phys. Rev. Lett. 76, 4384 (1996). doi:10.1103/PhysRevLett.76.4384
D. J. Lacks, Phys. Rev. Lett. 84, 4629 (2000). doi:10.1103/PhysRevLett.84.4629
G. D. Mukherjee, S. N. Vaidya and V. Sugandhi, Phys. Rev. Lett. 87, 195501 (2001). doi:10.1103/PhysRevLett.87.195501
M. Durandurdu and D. A. Drabold, Phys. Rev. B 64, 014101 (2000). doi:10.1103/PhysRevB.64. 014101
M. Durandurdu and D. A. Drabold, Phys. Rev. B 67, 212101 (2003). doi:10.1103/PhysRevB.67.212101
R. C. Hibbeler, Mechanics of Materials Prentice Hall International, Inc (1997).
C. F. Han, B. H. Wu, C. Y. Huang and J. F. Lin, J. Appl. Phys. 105, 023523 (2009). doi:10.1063/1.3056392
C. F. Han, B. H. Wu, J. F. Lin and C. K. Chung, Nanotechnology 19, 325710 (2008). doi:10.1088/0957-4484/19/32/325710
S. R. Kalidindi and S. Pathak, Acta. Mater. 56, 3523 (2008). doi:10.1016/j.actamat.2008.03.036
J. Jang, M. J. Lance, S. Wen, T. Y. Tsui, and G. M. Pharr, Acta. Mater. 53, 1759 (2005). doi:10.1016/j.actamat.2004.12.025
H. Bei, E. P. George, J. L. Hay and G. M. Pharr, Phys. Rev. Lett. 95, 045501 (2005). doi:10.1103/PhysRevLett.95.045501
F. Zandiehnadem and W. Y. Ching, Phys. Rev. B 41, 162 (1990). doi:10.1103/PhysRevB.41.12162
I. Zarudi and L. C. Zhang, Tribology Intern. 32, 701 (1999). doi:10.1016/S0301-679X(99)00103-6
J. E. Bradby, J. S. Williams and J. Wong-Leung, Appl. Phys. Lett. 77, 3749 (2000). doi:10.1063/1.1332110
J. E. Bradby, J. S. Williams and J. Wong-Leung, J. Mater. Res. 16, 1500 (2001). doi:10.1557/JMR.2001.0209
I. Zarudi, L. C. Zhang, W. C. D. Cheong and T. X. Yu, Acta. Mater. 53, 4795 (2005). doi:10.1016/j.actamat.2005.06.030
H. Olijnyk, Phys. Rev. Lett. 68, 2232 (1992). doi:10.1103/PhysRevLett.68.2232