JANA, D.; SAMANTA, S.; ROY, S.; LIN, Y. F.; MAIKAP, S. Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure. Nano-Micro Letters, [S. l.], v. 7, n. 4, p. 392-399, 2015. DOI: 10.1007/s40820-015-0055-3. Disponível em: https://mail.nmlett.org/index.php/nml/article/view/425. Acesso em: 17 nov. 2024.